• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.4
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• pp.903-908
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• 2015

This paper has analyzed threshold voltage shift for doping profile of asymmetric double gate(DG) MOSFET. Ion implantation is usually used in process of doping for semiconductor device and doping profile becomes Gaussian distribution. Gaussian distribution function is changed for projected range and standard projected deviation, and influenced on transport characteristics. Therefore, doping profile in channel of asymmetric DGMOSFET is affected in threshold voltage. Threshold voltage is minimum gate voltage to operate transistor, and defined as top gate voltage when drain current is $0.1{\mu}A$ per unit width. The analytical potential distribution of series form is derived from Poisson's equation to obtain threshold voltage. As a result, threshold voltage is greatly changed by doping profile in high doping range, and the shift of threshold voltage due to projected range and standard projected deviation significantly appears for bottom gate voltage in the region of high doping concentration.

• Journal of Digital Convergence
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• v.17 no.5
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• pp.391-398
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• 2019

This study aimed to investigate the factors that influence the attitude toward doping and to provide useful information for developing a doping prevention program suitable for Korean athletic players. One hundred and seventy-two players who enrolled in Korea Association of Athletics Federations were participated in this study and they filled in the questionnaire about demographic factors, information on doping, perfectionism, and perceived motivational climate. Collected data were analyzed by using stepwise multiple linear regression for exploring the main factor that affect the attitude toward doping depending on field and track events. All adult players have more permissive attitude toward doping than adolescents. In track event, while players who are sensitive to coach's criticism have more permissive attitude toward doping, players who focused on personal standards have more repressive attitude toward it. These results would be useful to develop anti-doping strategy for Korean field and track players.

• Journal of Digital Convergence
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• v.17 no.5
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• pp.385-390
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• 2019

This study aimed to identify the model fit of various versions of Performance Enhancement Attitude Scale (PEAS) developed for measuring quantitatively the attitude toward doping and to provide the information on Korean version of PEAS. One hundred and eighty elite athletic players participated in this study and they filled out 17 items PEAS under the supervision. And 17 items, 11 items, 9 items, 8 items and 6 items PEAS were analyzed by using confirmatory factor analysis. The result of this study showed that an 8 items PEAS was fit for Korean elite athletic players, and a 6 items PEAS was for adolescents, but insignificant. Therefore, further studies of the relationship between psychosocial factors and attitudes toward doping by using 8-items PEAS would provide precise and useful information for developing anti-doping strategy.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.285-287
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• 2016

이황화 몰리브덴(Molybdenum disulfide: $MoS_2$)을 채널(Channel) 물질로 이용하여 metal-oxide-semiconductor(MOS) 구조를 제작하고, 효율적인 제작과정을 제시하였고 특히, Source/Drain의 Doping concentration을 조절하여 효과적인 $MoS_2$ Transistor를 제작 및 시뮬레이션 하였다. 그 후 여러 MOSFET의 특성 분석을 통하여 소자로서의 기능을 확인해보았다. 그리고 특히 채널의 전기적인 특성을 분석하고 채널 내 그리고 contact 사이의 저항 및 mobility의 특성을 알아보았는데, 그 중 Source/Drain Doping Effect와 performance 분석을 통해, 최적화된 $MoS_2$ Transistor를 찾아보았다.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.360-361
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• 2004

An atomization doping process is proposed to manufacture nonlinear optical fiber containing higher concentration of PbTe nano-particles in the core of the fiber than that by the conventional solution doping process. The absorption peaks appeared near 725nm, 880nm, and 1050nm are attributed to the PbTe quantum dots in the fiber core.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.930-932
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• 2007

In order to understand the doping control for the belt source evaporation, the Alq3 and NPB were codeposited on the Ta plate to re-sublimate. The very slow heating $(0.1^{\circ}C/s)$ of the Ta plate shows the separated rate signals of Alq3 and NPB sublimated from the Alq3-mixed NPB organic film on Ta plate. The ratio of the vapor rates of Alq3 and NPB was measured as same as that of each sublimation rates. Therefore, the doping control of the belt source evaporation is of the ratio of the vaporization rates of host and dopants.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.22-27
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• 1998

We have investigated the effect of an ion shower doping of the laser annealed poly-Si films at an elevated substrate temperatures. The substrate temperature was varied from room temperature to 300$^{\circ}C$ when the poly-Si film was doped with phosphorus by a non-mass-separated ion shower. Optical, structural, and electrical characterizations have been performed in order to study the effect of the ion showering doping. The sheet resistance of the doped poly-Si films was decreased from7${\times}$106 $\Omega$/$\square$ to 700 $\Omega$/$\square$ when the substrate temperature was increased from room temperature to 300$^{\circ}C$. This low sheet resistance is due to the fact that the doped film doesn't become amorphous but remains in the polycrystalline phase. The mildly elevated substrate temperature appears to reduce ion damages incurred in poly-Si films during ion-shower doping. Using the ion-shower doping at 250$^{\circ}C$, the field effect mobility of 120 $\textrm{cm}^2$/(v$.$s) has been obtained for the n-channel poly-Si TFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.177-180
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• 2004

발광층에 Alq3와 rubrene을 mixed host로 사용하고 DCJTB를 형광 dopant로 사용한 다층 박막 구조의 red OLEDs를 제작하였다. 소자의 구조는 $ITO:Anode(120nm)/{\alpha}-NPD:HTL(40nm)/Alq_3+Rubrene(mixed\;host\;1:1)+DCJTB(red\;dopant\;3%)+:EML(20nm)/Alq_3:ETL(40nm)/MgAg(Mg\;5%\;wt):Cathode(150nm)$ 로서 EML내부에 DCJTB를 Totally Doping Method와 Dotted-Line Doping Method의 두 가지 방법으로 도핑 하였다. Mixed host구조에 DCJTB를 6구간으로 나누어 Dotted Line Doping한 소자는 luminance yield가 $9.2cd/A@10mA/cm^2$ 이었다. 이 소자는 DCJTB만을 Totally Doping한 소자의 luminance yield $3.2cd/A@10mA/cm^2$에 비해 약 190%정도의 높은 효율 향상을 보였다. 또한 $10mA/cm^2$에 도달하는 전압은 5.5V Vs. 8.5V로서 mixed host를 사용한 소자에서 약 3V정도 구동전압이 낮아지는 효과가 있었다. 발광 스펙트럼의 Full Width Half Maximum(FWHM)은 각각 56.6nm와 61nm로서 rubrene을 mixed host로 사용한 소자에서 높은 색 순도를 얻을 수 있었다. 이러한 성능의 향상은 $Alq_3$와 혼합된 rubrene에 의한 낮은 전하주 입장벽, 높은 전류밀도에서 나타나는 발광감쇄현상의 감소, 그리고 발광층의 DLD구조에 의한 전하의 trap & confinement 에 따른 발광 exciton의 형성확률이 증가한데서 나타났다고 생각된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.81-82
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• 2006

Doping is a well-known method for improving electroluminescent (EL) efficiency of organic light emitting diodes. In our study, doping with 2 materials simultaneously, we could achieve improved EL efficiency. The emission layer was tris-(8-hydroxyquinoline)aluminum, and the 2 dopants were N,N'-dimethyl-quinacridone (DMQA) and 10-(2-Benzothiazolyl)-2, 3, 6, 7-tetrahydro-1,1,7,7,-tetramethyl 1-1H, 5H, 11H-[1] benzopyrano [6,7,8-ij]quinolizin-11-one (C-545T). The EL intensity of co-doped device was nearly flat, it shows that co-doping technique could be a effective way to improve the EL efficiency. EL efficiency of Single-doped device based on DMQA and C-S45T were ~6.47Cd/A and ~7.45Cd/A, respectively. Co-doped device showed higher EL efficiency of ~8.30Cd/A.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.564-569
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• 2018

$Cu_2ZnSn(S,Se)_4$ (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.