• Carbon letters
• /
• v.19
• /
• pp.40-46
• /
• 2016

Nitrogen-atom doped graphene oxide was considered to prevent the dissolution of polysulfide and to guarantee the enhanced redox reaction of sulfur for good cycle performance of lithium sulfur cells. In this study, we used urea as a nitrogen source due to its low cost and easy preparation. To find the optimum urea content, we tested three different ratios of urea to graphene oxide. The morphology of the composites was examined by field emission scanning electron microscope. Functional groups and bonding characterization were measured by X-ray photoelectron spectroscopy. Electrochemical properties were characterized by cyclic voltammetry in an organic electrolyte solution. Compared with thermally reduced graphene/sulfur (S) composite, nitrogen-doped graphene/S composites showed higher electroactivity and more stable capacity retention.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.993-995
• /
• 1998

We fabricated fiber gratings with three different Ge-doped fibers exposed to 60atm pressure of Hz gas at 90"C for different times and studied the effects of Ge-doping concentration and $H_2$ loading time on the growth of gratings. According to experiments. the growing effect of hydrogen loading on high Ge-doped fiber was great.

• Journal of Electrochemical Science and Technology
• /
• v.5 no.2
• /
• pp.49-52
• /
• 2014

Graphene nanosheets (GNS), nitrogen-doped graphene nanosheets (N-GNS), and sulfur-doped graphene nanosheets (S-GNS) were successfully synthesized, and their catalytic effects on the oxygen reduction reaction (ORR) in $Li-O_2$ batteries were compared. The S-GNS electrode exhibited the highest ORR catalytic activity, resulting in enhanced discharge capacity and power capability. We attributed the enhanced ORR catalytic activity to the increased defect sites on graphene.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1685-1687
• /
• 1996

Recently, conducting polymer has been much attracted as novel materials because of its electronic behavior and functional application by doping process. In this paper, we electrochemically synthesized polyaniline films under potential sweep conditions, which exhibit high electric conductivity about 200 S/cm. Specific energy of 600 Wh/kg and Ah efficiency 98% were achieved during the charge/discharge cycling using liquid electrolyte system. On the other hand, consequences of the cycling were 260 Wh/kg and 95% Ah efficiency using polyethylene oxide(PEO) based solid-state electrolyte system.

• 한국초전도학회:학술대회논문집
• /
• 2009.07a
• /
• pp.39-39
• /
• 2009

• Proceedings of the KIEE Conference
• /
• 1990.07a
• /
• pp.221-223
• /
• 1990

In this study, we have studied the optioal properties and $I_2$ doping effect of Poly(3-Akkylthiophene) solution. The end of speotrum absorbance on the solutions of Poly(3 - Octylthiophene), Poly (3-Dodecylthiophene) and Poly(3-Dooooylthiophene) was dependent on temperature. It is bellved that conrod-coil transition dependent on temperature was rod-coil transition. And absortance peak of Poly (3-Dodecylthiophene) in dichloromethane solution increased with increasing the $I_2$ dopant.

• Journal of the Korean Ceramic Society
• /
• v.37 no.12
• /
• pp.1159-1164
• /
• 2000

페롭스카이트 구조를 갖는 E $r_{1-x}$S $r_{x}$Cr $O_{3-y}$ 계에서 x=0.0, 0.05, 0.1, 0.2인 비화학양론적 화합물 고용체를 1573 K 대기압 하에서 제조하였다. X-선 회절분석을 통하여 제조된 모든 계들이 등방정계 단일상을 형성하였고, 또한 반지름이 큰 S $r^{2+}$를 doping 시켜줌에 따라 격자상수 및 환산부피가 증가됨을 알 수 있었으며, 단위 세포의 부피는 직선성을 보이며 증가하였다. TG-DTA에 따른 열분석 결과 Sr이 치환되지 않은 계에서는 상전이가 발생하는 반면, x값이 0.05 이상인 계들은 고온영역에 이르기까지 등방정계에서 마름모정계로의 상전이가 억제되었다. 전자현미경을 통하여 치환된 Sr의 몰비에 따른 시료들이 미세구조를 관찰하였고, d.c 전도도 측정을 통하여 다결정성 시료계들이 가지는 전도도의 온도 의존성으로부터 구한 활성화 에너지는 0.17 eV였다.다.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.134-139
• /
• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.36-39
• /
• 2003

Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

• Korean Journal of Materials Research
• /
• v.6 no.6
• /
• pp.568-575
• /
• 1996

The double sided buried contact(DSBC)silicon solar cell processing requires doping of the rear and front grooves with boron and phosphorus respectively. The successful electroless plating of these grooves with the appropriate metals haave been found to depend on the boron conditions for the rear fingers. However, an increased understanding of electroless plating has removed this restriction. Thus the DSBC cells using different boron conditions can be electrolessly plated with ease. This paper presents the recent work done on metallizing the double sided buried contact silicon solar cells with heavily doped boron grooves. The cells results indicate that, the heavier the boron grooves, the poorer the cell performance because of the probable higher metal contact recombination associated with boron grooves.