• 제목/요약/키워드: S-N line

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The Line n-sigraph of a Symmetric n-sigraph-V

  • Reddy, P. Siva Kota;Nagaraja, K.M.;Geetha, M.C.
    • Kyungpook Mathematical Journal
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    • 제54권1호
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    • pp.95-101
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    • 2014
  • An n-tuple ($a_1,a_2,{\ldots},a_n$) is symmetric, if $a_k$ = $a_{n-k+1}$, $1{\leq}k{\leq}n$. Let $H_n$ = {$(a_1,a_2,{\ldots},a_n)$ ; $a_k$ ${\in}$ {+,-}, $a_k$ = $a_{n-k+1}$, $1{\leq}k{\leq}n$} be the set of all symmetric n-tuples. A symmetric n-sigraph (symmetric n-marked graph) is an ordered pair $S_n$ = (G,${\sigma}$) ($S_n$ = (G,${\mu}$)), where G = (V,E) is a graph called the underlying graph of $S_n$ and ${\sigma}$:E ${\rightarrow}H_n({\mu}:V{\rightarrow}H_n)$ is a function. The restricted super line graph of index r of a graph G, denoted by $\mathcal{R}\mathcal{L}_r$(G). The vertices of $\mathcal{R}\mathcal{L}_r$(G) are the r-subsets of E(G) and two vertices P = ${p_1,p_2,{\ldots},p_r}$ and Q = ${q_1,q_2,{\ldots},q_r}$ are adjacent if there exists exactly one pair of edges, say $p_i$ and $q_j$, where $1{\leq}i$, $j{\leq}r$, that are adjacent edges in G. Analogously, one can define the restricted super line symmetric n-sigraph of index r of a symmetric n-sigraph $S_n$ = (G,${\sigma}$) as a symmetric n-sigraph $\mathcal{R}\mathcal{L}_r$($S_n$) = ($\mathcal{R}\mathcal{L}_r(G)$, ${\sigma}$'), where $\mathcal{R}\mathcal{L}_r(G)$ is the underlying graph of $\mathcal{R}\mathcal{L}_r(S_n)$, where for any edge PQ in $\mathcal{R}\mathcal{L}_r(S_n)$, ${\sigma}^{\prime}(PQ)$=${\sigma}(P){\sigma}(Q)$. It is shown that for any symmetric n-sigraph $S_n$, its $\mathcal{R}\mathcal{L}_r(S_n)$ is i-balanced and we offer a structural characterization of super line symmetric n-sigraphs of index r. Further, we characterize symmetric n-sigraphs $S_n$ for which $\mathcal{R}\mathcal{L}_r(S_n)$~$\mathcal{L}_r(S_n)$ and $$\mathcal{R}\mathcal{L}_r(S_n){\sim_=}\mathcal{L}_r(S_n)$$, where ~ and $$\sim_=$$ denotes switching equivalence and isomorphism and $\mathcal{R}\mathcal{L}_r(S_n)$ and $\mathcal{L}_r(S_n)$ are denotes the restricted super line symmetric n-sigraph of index r and super line symmetric n-sigraph of index r of $S_n$ respectively.

XPS를 이용한 Cu/TiN의 계면에 관한 연구 (Interface characteristics of Cu/TiN system by XPS)

  • 이연승;임관용;정용덕;최범식;황정남
    • 한국진공학회지
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    • 제6권4호
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    • pp.314-320
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    • 1997
  • XPS를 이용하여 공기 중에 노출된 TiN박막과 상온 증착된 Cu사이의 계면에서의 화학적 반응과 전자 구조적인 변화를 조사하였다. Ti(2p), O(1s), N(1s), Cu(2p) core-level과 Cu LMM Auger line의 spectrum을 보면, Cu의 증착두께가 증가하여도 peak의 위치 뿐만 아니라 line shape이 전혀 변화하지 않는다. 그리고 XPS에 의한 valence bands를 보아도 전 혀 변화가 없다. 이것은 공기 중에 노출된 TiN박막과 Cu사이의 계면에서 Cu화합물의 어떠 한 형태도 존재하지 않을 뿐만 아니라 전자 구조적인 면에서도 전혀 변화가 없음을 의미한 다. 계면에서 Cu가 화학적 반응을 일으키지 않는 것은 계면접합력을 나쁘게 하는 요인이 된 다. 우리는 계면에서의 화학 반응 또는 전자구조의 변화에 대한 연구를 통하여 Cu와 TiN박 막의 계면접합력을 이해할 수 있었다.

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N III Bowen Lines and Fluorescence Mechanism in the Symbiotic Star AG Peg

  • Hyung, Siek;Lee, Seong-Jae;Lee, Kang Hwan
    • Journal of Astronomy and Space Sciences
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    • 제35권1호
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    • pp.7-18
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    • 2018
  • We have investigated the intensities and full width at half maximum (FWHM) of the high dispersion spectroscopic N III emission lines of AG Peg, observed with the Hamilton Echelle Spectrograph (HES) in three different epochs at Mt. Hamilton's Lick Observatory. The earlier theoretical Bowen line study assumed the continuum fluorescence effect, presenting a large discrepancy with the present data. Hence, we analyzed the observed N III lines assuming line fluorescence as the only suitable source: (1) The O III and N III resonance line profiles near ${\lambda}$ 374 were decomposed, using the Gaussian function, and the contributions from various O III line components were determined. (2) Based on the theoretical resonant N III intensities, the expected N III Bowen intensities were obtained to fit the observed values. Our study shows that the incoming line photon number ratio must be considered to balance at each N III Bowen line level in the ultraviolet radiation according to the observed lines in the optical zone. We also found that the average FWHM of the N III Bowen lines was about $5km{\cdot}s^{-1}$ greater than that of the O III Bowen lines, perhaps due to the inherently different kinematic characteristics of their emission zones.

Sex Steroids Regulate Expression of Genes Containing Long Interspersed Elements-1s in Breast Cancer Cells

  • Chaiwongwatanakul, Saichon;Yanatatsaneejit, Pattamawadee;Tongsima, Sissades;Mutirangura, Apiwat;Boonyaratanakornkit, Viroj
    • Asian Pacific Journal of Cancer Prevention
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    • 제17권8호
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    • pp.4003-4007
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    • 2016
  • Long interspersed elements-1s (LINE-1s) are dispersed all over the human genome. There is evidence that hypomethylation of LINE-1s and levels of sex steroids regulate gene expression leading to cancer development. Here, we compared mRNA levels of genes containing an intragenic LINE-1 in breast cancer cells treated with various sex steroids from Gene Expression Omnibus (GEO), with the gene expression database using chi-square analysis (http://www.ncbi.nlm.nih.gov/geo). We evaluated whether sex steroids influence expression of genes containing an intragenic LINE-1. Three sex steroids at various concentrations, 1 and 10 nM estradiol (E2), 10 nM progesterone (PG) and 10 nM androgen (AN), were assessed. In breast cancer cells treated with 1 or 10 nM E2, a significant percentage of genes containing an intragenic LINE-1 were down-regulated. A highly significant percentage of E2-regulated genes containing an intragenic LINE-1 was down-regulated in cells treated with 1 nM E2 for 3 hours (p<3.70E-25; OR=1.91; 95% CI=2.16-1.69). Similarly, high percentages of PG or AN-regulated genes containing an intragenic LINE-1 wwere also down-regulated in cells treated with 10 nM PG or 10 nM AN for 16 hr (p=9.53E-06; OR=1.65; 95% CI=2.06-1.32 and p=3.81E-14; OR=2.01; 95% CI=2.42-1.67). Interestingly, a significant percentage of AN-regulated genes containing an intragenic LINE-1 was up-regulated in cells treated with 10 nM AN for 16 hr (p=4.03E-02; OR=1.40; 95% CI=1.95-1.01). These findings suggest that intragenic LINE-1s may play roles in sex steroid mediated gene expression in breast cancer cells, which could have significant implications for the development and progression of sex steroid-dependent cancers.

Recalibrating virial black hole mass estimators

  • 박다우;우종학
    • 천문학회보
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    • 제36권2호
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    • pp.63.1-63.1
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    • 2011
  • In understanding AGN physics, it is fundamental to determine black hole masses. Based on the gas kinematics of the broad-line region, black hole masses can be derived from the product of the width of the broad emission lines and the continuum/line luminosities. For a sample of 37 intermediate-luminosity AGN at z~0.4, we obtained high quality spectra (S/N~100) using the Low Resolution Imaging Spectrometer(LRIS) at the KECK telescope, in order to calibrate various black hole mass estimators based on the Mg II (2798A), the $H{\beta}$ (4861A), and the $H{\alpha}$ (6563$\bar{A}$) emission lines. Based on our multicomponent fitting analysis, we subtract continuum, FeII emission, and host galaxy starlight, reducing systematic errors in measuring emission line widths. Combining low S/N SDSS spectra with our high S/N keck spectra, we determine a set of ~30 black hole masses of the sample for each emission line. Then by comparing various sets of black hole masses, we internally calibrate each mass estimators and investigate uncertainties and limitations of each mass estimator.

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보문분지 구조파악을 위한 지구물리탐사 (A Geophysical Study for the Subsurface Structure of the Bomun Basin)

  • 서만철;윤혜수
    • 지구물리
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    • 제3권1호
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    • pp.67-74
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    • 2000
  • 보문분지의 대체적인 분지구조를 밝히기 위해 분지를 동서로 횡단하는 측선 Line-1, 분지의 동측 경계를 횡단하는 측선 Line-2, 분지내부의 측선 Line-3을 설정하고, 측선 Line-1에서는 자력탐사와 방사능탐사, 측선 Line-2에서는 방사능 탐사, 측선3에서는 탄성파탐사를 실시하였다. 자력 및 방사능탐사 결과, 측선 Line-1을 따라 측선의 기점 서측 2.55 km, 동측 1.6 km에서 이상값을 보이고, 측선2에서는 방사능값이 1.9 km에서 급격한 변화를 나타내고 있으며, 이 급격한 변화는 지질도상의 분지경계부와 정확히 일치한다. 자력탐사 결과, 백악기 기반암지역은 높은 자력이상$(200\;{\sim}\;500\;nT)$, 보문분지 내에서는 상대적으로 낮은 자력이상$(-100\;{\sim}\;+100\;nT)$을 보여 대조적인 특성을 보인다. 또한 방사능강도에서도 뚜렷한 차이를 보여 백악기 기반암지역은 보문분지지역에 비하여 상대적으로 낮다. 보문분지 내의 자력이상치는 서쪽이 낮고 동쪽이 높은 형태를 보여 분지구조가 서쪽이 깊고 동쪽으로 얕아지는 반지구형임을 나타낸다. 또한 보문분지의 서측 경계부의 기존의 흑색셰일로 표기되었던 백악기 기반암지역이 높은 자력이상치와 낮은 방사능강도를 보여 화산암일 가능성이 높은 것으로 판명된다. 탄성파탐사 결과 측선3지역에서는 455 m/s, 1904 m/s, 2662 m/s의 속도를 갖는 지층들이 존재하머, 심부 지층구조는 서쪽으로 $2.3^{\circ}$ 기울어진 경사구조로 해석된다. 이러한 해석은 자력이상곡선으로부터 해석된 서쪽이 깊고 동쪽으로 얕아지는 반지구형(half-graben)모델과 일치 한다.

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Ti/TiN Barrier 층을 갖는 Al 배선의 Electromigration 특성 (A study on Electromigration characteristics in Al line with Ti/TiN Barrier Layer)

  • 추교섭;신상우;주유진;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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    • pp.364-366
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    • 1995
  • We investigated the Electromigration characteristics in Cu alloyed Al line and the effect of Ti/TiN barrier layer on the characteristics. Test structures were fabricated by wafer level and 50% failure times were tested in the condition of j= 2 MA/$cm^3$, T= 300$^{\circ}C$. The reliability of Al line was improved which was 0.5%Cu Alloyed, but Ti/TiN under layer deteriorated the reliability while TiN over layer improved the characteristics.

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WSi2 word-line 및 bit-line용 spacer-Si3N4 박막의 증착 (Deposition of Spacer-Si3N4 Thin Film for WSi2 Word-Line and Bit-Line)

  • 안승준;김대욱;김종해;안성준;김영정;김호섭
    • 한국재료학회지
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    • 제14권6호
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    • pp.402-406
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    • 2004
  • $WSi_2$, $TiSi_2$, $CoSi_2$, and $TaSi_2$ are general silicides used today in semiconductor devices. $WSi_2$ thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and $n^{+}$ region. However, there are several serious problems encountered because $WSi_2$ is oxidized and forms a native oxide layer at the interface between $WSi_2$ and $Si_3$$N_4$. In this study, we have introduced 20 $slm-N_2$ gas from top to bottom of the furnace in order to control native oxide films between $WSi_2$ and $Si_3$$N_4$ film. In resulting SEM photographs, we have observed that the native oxide films at the surface of $WSi_2$ film are removed using the long injector system.

Efficient and Secure Authenticated Key Exchange

  • Park Jong-Min
    • Journal of information and communication convergence engineering
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    • 제3권3호
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    • pp.163-166
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    • 2005
  • The Key exchange protocols are very crucial tools to provide the secure communication in the broadband satellite access network. They should be required to satisfy various requirements such as security, Key confirmation, and Key freshness. In this paper, Two authenticated key exchange protocols TPEKE-E(Two Pass Encrypted Key Exchange-Exchange-Efficient) and TPEKE-S(Two Pass Encrypted Key xchange-Secure) are introduced. A basic idea of the protocols is that a password can be represented by modular addition N, and the number of possible modular addition N representing the password is $2^N$. The TPEKE-E is secure against the attacks including main-in-the-middle attack and off-line dictionary attack, and the performance is excellent so as beyond to comparison with other authenticated key exchange protocols. The TPEKE-S is a slight modification of the TPEKE-E. The TPEKE-S provides computational in feasibility for learning the password without having performed off line dictionary attack while preserving the performance of the TPEKE-E.

The Magnetic Field Dependence Properties of Quasi Two Dimensional Electron-piezoelectric Potential Interacting System in GaN and ZnO

  • Lee, S.H.;Sug, J.Y.;Lee, J.H.;Lee, J.T.
    • Journal of Magnetics
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    • 제16권4호
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    • pp.408-412
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    • 2011
  • We investigated theoretically the magnetic field dependence of the quantum optical transition of qusi 2-Dimensional Landau splitting system, in GaN and ZnO. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). Through the analysis of this work, we found the increasing properties of the optical Quantum Transition Line Shapes(QTLSs) which show the absorption power and the Quantum Transition Line Widths(QTLWs) with the magnetic-field in GaN and ZnO. We also found that QTLW, ${\gamma}(B)_{total}$ of GaN < ${\gamma}(B)_{total}$ of ZnO in the magnetic field region B < 25 Tesla.