• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.241-248
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• 1994

The ionic conductivity in glassy systems were calculated as functions of temperature and ion concentration using Monte-Carol method considering interaction between neighbouring ion-site occupancies, {{{{ rho }}'s. Also the vacancy availability factor, V, the effective jump frequency factor, W, and the charge correlation factor, fc, have been investigated. The Arrhenius plot could be obtained from the ln {{{{ sigma }}T vs. 1/T* plots and was in exellent agreement with the experimental observations. The effects of the various types of potential well on the ionic conductivity have been considered. The activation energy Eg for ion motion in the glass was 1.3│ε│from the ln {{{{ sigma }}T vs. 1/T* plots.

• Journal of Technologic Dentistry
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• v.35 no.4
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• pp.281-286
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• 2013

Purpose: Surface modification is important techniques in modern dental and orthopedic implants. This study was performed to try embedding of bioactive materials in porous Ti implants. Methods: Porous Ti implant samples were fabricated by sintering of spherical Ti powders in a high vacuum furnace. It's diameter and height were 4mm and 20mm. Embedding process was used to suction and vacuum chamber. Loading properties of porous Ti implants were evaluated by scanning electron microscope(SEM), confocal laser scanning microscope(CLSM), and UV-Vis-NIR spectrophotometer. Results: Internal pore structure was formed fully open pore. Average pore size and porosity were $10.253{\mu}m$ and 17.506%. Conclusion: Porous Ti implant was fabricated successfully by sintering method. Particles are necking strongly each other and others portions were vacancy. This porous structure can be embedded to bioactive materials. Therefore bioactive materials will be able to embedding to porous Ti implants. Bioactive materials embedding in the porous Ti implant will induced new bone faster.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1566-1570
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• 2018

We investigated the visible emission property of $SrTiO_3$ (STO) single crystals irradiated with gammy-ray (${\gamma}$-ray) at various total doses up to 900 kGy. The electric and optical absorption properties of the irradiated STO samples were hardly changed with the ${\gamma}$-ray irradiation, compared with those of un-irradiated STO. In contrast, the visible emission near 550 nm increased with the ${\gamma}$-ray dose increasing. While the development of the visible emission was indicative of the increase of oxygen vacancies inside STO by the ${\gamma}$-ray irradiation, the newly generated oxygen vacancies were not significantly harmful to the electric and optical properties of STO. We concluded that the STO single crystal should have a good tolerance against the damage by the ${\gamma}$-ray irradiation.

• Bulletin of the Korean Chemical Society
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• v.21 no.6
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• pp.577-582
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• 2000

Interdiffusion process at interfaces of chemically identical polymers (e.g., deuterated-nondeuterated pairs) with different molecular weights or polymers with similar physical properties, is studied here by varying the diffusion time. Considering the vacancy flux ($J_v$) and adopting the Cahn-Hilliard interracial energy in describing this system, we can see that the variation of the interfacial composition profile with time is asymetric and the interface moves towards the polymer with the lower molecular weight as interdiffusion progresses. Furthermore, interface shift $\Delta\chi$, which characterizes the interdiffusion between polymers, agrees well with the behaviors of the existing experimental data. We can also obtain the interface shift factor C, which can be converted into values of $D_s$ (self-diffusion coefficient of the smaller molecules), from the slopes of the linear fits to the data of the interface shift.

• Industry Promotion Research
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• v.1 no.1
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• pp.1-6
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• 2016

To research the correlation between the amorphous and crystal structure of oxide semiconductors, AZO and IGZO films were deposited and annealed with various temperatures in a vacuum state. AZO increased the degree of crystal structure with increasing the annealing temperature, but IGZO became an amorphous structure after the annealing process at high temperature. The series of AZO films with various annealing temperatures showed the chemical shift from the analyzer of PL and O 1s spectra, but the results of IGZO films by PL and O 1s spectra were not observed the chemical shift. The binding energy of oxygen vacancy of AZO with a crystal structure was 531.5 eV, and that of IGZO with an amorphous structure was 530 eV as a lower binding energy.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.59-62
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• 2017

In this paper, atmospheric pressure plasma treatment was proposed for high performance indium gallium zinc oxide thin film transistor (IGZO TFT). RF Ar plasma treatment is performed at room temperature under atmospheric pressure as a simple and cost effective channel surface treatment method. The experimental results show that field effect mobility can be enhanced by $2.51cm^2/V{\cdot}s$ from $1.69cm^2/V{\cdot}s$ to $4.20cm^2/V{\cdot}s$ compared with a conventional device without plasma treatment. From X-ray photoelectron spectroscopy (XPS) analysis, the increase of oxygen vacancies and decrease of metal-oxide bonding are observed, which suggests that the suggested atmospheric Ar plasma treatment is a cost-effective useful process method to control the IGZO TFT performance.

• Applied Chemistry for Engineering
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• v.31 no.4
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• pp.368-376
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• 2020

In this study, an analysis on the reaction characteristics of a catalyst using platinum (Pt) as an active oxidation metal catalyst for controlling SO₂ was performed. Pt/TiO₂ catalyst was prepared by using Pt as various precursor forms on a titania (TiO₂) support, and used for the experiment. There was no difference in performance of SO₂ oxidation according to Pt valence states such as Pt²⁺ or Pt⁴⁺ on Pt/TiO₂, and Pt chloride species such as PtCl_x reduces SO₂ oxidation performance. In addition, as a result of analyzing the valence state of the catalyst before and after the SO₂ oxidation reaction by XPS analysis, a decrease in lattice oxygen and an increase in surface chemisorbed oxygen after the SO₂ oxidation reaction were confirmed. Therefore it can be suggested that the oxidation reaction of SO₂ when using the Pt/TiO₂ catalyst is the major one following the Mar-Van Krevelen mechanism where the reaction of lattice oxygen corresponding to PtOx and the oxidation-reduction reaction by oxygen vacancy occur. Overall, it can be confirmed that the oxygen species of PtOx (Pt²⁺ or Pt⁴⁺) present on the catalyst acts as a major active site.

• Progress in Medical Physics
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• v.12 no.1
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• pp.1-8
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• 2001

Diamond thin films were synthesized by a chemical vapor deposition (CVD). Raman spectrum showed the diamond line at 1332 $cm^{-1}$ / and x-ray diffraction pattern exhibited a strong (111) peak of diamond. The scanning electron microscopy analysis showed that the CVD diamond thin film was grown to be unepitaxial crystallites with pyramidal hillocks. A wavelength-resolved thermoluminescence (TL) of the CVD diamond thin film irradiated with X-rays showed one peak at 430 nm around 560 K. The glow curve of the CVD diamond thin film produced one dominant 560-K peak that was caused by first-order kinetics. Its activation energy and the escape frequency were calculated to be 0.92 ～ 1.05 eV and 1.34 $\times$ 10$^{7}$ sec$^{-1}$ , respectively. The emission spectrum at 560 K was split into 1.63-eV, 2.60-eV, and 3.07-eV emission bands which is known to be attribute to silicon-vacancy center, A center, and H3 center, respectively.

• Journal of the Korean Society of Costume
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• v.26
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• pp.251-264
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• 1995

The purpose of this study is to introduce and research the traditional Korean costume collections of Dr. McCune who was born in Pyung-Yang in 1907 and resided until her marriage to George S. McCune in about 1930. Her collections consist of three categories : children's costumes, adults' costumes, access-ories. The characteristics of collections are summorized as follows : 1. Deep wrappings are found at the front part of the top clothing when worn. The front gusset (SUB) has been dramaticaly tilted due to the difference in lengths of the top and bottom parts of the front gusset. 2. Assymetry was one of the principles of decorating Korean costumes. The assymetry were repeated at the GIT and SUB of CHOGORE with patchwork patterns. 3. Primary colors were favored in Korean costume. Hue contrast in color combinations was prefered as well, such as : yellow CHOGORE and purple blue CUFFS, a red SUN pattern matched with green embroidery. 4. Surface patterns were not so popular in Korean costumes, while the most colorful and fabulous patterns were shown through the various embroidery artifacts. Patterns were used as a way of expressing of their desires or longings in Korean costumes. The main themes of the patterns were longevity and happiness. The patterns such as peony, lotus, chrysanthemum, bamboo and bat were implying symbolism at that time. 5. Natural materials were prefered for the garments, Silk and cotton were used as the main materials of the costume collections. Studies of Korean Costume collections owned by international collectors are meaningful to boost the arena of Korean Costumes as well as fill up the vacancy left by lost costume artifacts.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.26 no.1
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• pp.8-13
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• 1990

The microscopic relaxation parameters for the single crystal were measured by using thermally stimulated depolarization (TSD). Initial rise method, various heating rate method and total glow peak method were used for the determination of the activation energy and Debye relaxation time from TSD glow curves. Activation energy, pre-exponential factor and relaxation time for impurity-vacancy dipole reorientation were 0.55eV, 1.97$\times$10 super(-12) sec and 12.19sec in average, respectively. Dielectric dissipation factor for the crystal was calculated from the measured TSD glow curve, its value being about 3$\times$10 super(-2).