• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.130.1-130.1
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.202.1-202
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.115.1-115
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.102-103
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.28-28
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• 1996

• Carbon letters
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• v.14 no.2
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• pp.121-125
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• 2013

In this study, PtRu nanoparticles deposited on binary carbon supports were developed for use in direct methanol fuel cells using carbon blacks (CBs) and multi-walled carbon nanotubes (MWCNTs). The particle sizes and morphological structures of the catalysts were analyzed using X-ray diffraction and transmission electron microscopy, and the PtRu loading content was determined using an inductively coupled plasma-mass spectrometer. The electrocatalytic characteristics for methanol oxidation were evaluated by means of cyclic voltammetry with 1 M $CH_3OH$ in a 0.5 M $H_2SO_4$ solution as the electrolyte. The PtRu particle sizes and the loading level were found to be dependent on the mixing ratio of the two carbon materials. The electroactivity of the catalysts increased with an increasing MWCNT content, reaching a maximum at 30% MWCNTs, and subsequently decreased. This was attributed to the introduction of MWCNTs as a secondary support, which provided a highly accessible surface area and caused morphological changes in the carbon supports. Consequently, the PtRu nanoparticles deposited on the binary support exhibited better performance than those deposited on the single support, and the best performance was obtained when the mass ratio of CBs to MWCNTs was 70:30.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• Journal of the Korean Applied Science and Technology
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• v.31 no.2
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• pp.190-196
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• 2014

The sol-gel method was used to prepare binary metal oxide ($IrO_2-RuO_2$) pH sensor. The electrodes that mole percent compositions (mol%) of $IrO_2$ and RuO2 were 70:30 and 30:70 were selected. The characterizations of Nernstian response over pH range, response rate, interference on alkaline metals and reproducibility were investigated. Also the electroanalytical properties of these electrodes were evaluated in comparison with a commercial glass pH electrode. The composition of $IrO_2:RuO_2$ 70:30 mol% was chosen as better electrode formulation. The electrode was not susceptible to the action of interfering ions such as $Li^+$, $Na^+$ and $K^+$.

• Ceramist
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• v.3 no.1
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• pp.45-52
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• 2000

전자싸이클로트론공명플라즈마 화학기상증착법(ECR-PECVD)에 의한 Pt 및 $RuO_2$ 기판에서의 PZT 박막의 증착특성 및 전기적 특성을 조사하였다. $RuO_2$ 기판에서는 Pt 기판에 비하여 Pb-관련 이차상이 형성되기 쉬웠고, PZT 페로브스카이트 핵생성이 어려웠다. 하지만, $RuO_2$ 기판에서도 금속유기 원료기체의 정확한 유량조절(특히, $Pb(DPM)_2$ 유량)과 Ti-oxide 씨앗층의 도입을 통하여 $450^{\circ}C$의 비교적 낮은 증착온도에서 단일한페로브스카이트 박막 제조가 가능하였으며, $RuO_2$ 기판에서도 미세구조가 향상된 PZT 박막의 경우 $10^{-6}A/cm^2@100kV/cm$의 우수한 누설전류 특성을 나타내었다. 4 가지 전극배열의 PZT 커패시터들 중에서 $RuO_2//RuO_2$ 커패시터는 누설전류밀도가 $10^{-4}A/cm^2@100kV/cm$ 정도로 높았지만, 피로현상은 나타나지 않았다. 일방향 전계 (unipolar) 피로특성에서 나타난 polarization-shift 현상과 양방향 전계 (bipolar) 피로특성의 온도의존성 결과는 PZT 박막내 charged defect의 이동이 어려움을 나타내었다. Bipolar 신호에 의한 피로현상은 인가전계에 의한 분극반전 과정에서 Pt 계면에서 charged defect의 형성과 관련이 있는 것으로 판단되었다. 또한, 상하부 전극물질 이 다른 경우에는 상하부 계면의 charged defect 밀도에 차이가 생겨 내부전계가 형성되는 것으로 판단되었다.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.7-12
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• 2018

The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.