• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.427-435
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• 2014

Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

• The Journal of Advanced Prosthodontics
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• v.1 no.2
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• pp.91-96
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• 2009

STATEMENT OF PROBLEM. The aim of this study was to study the effects of various surface treatments to a titanium surface on the expression of Runx2 in vitro. MATERIAL AND METHODS. Human Osteosarcoma TE-85 cells were cultured on machined, sandblasted, or anodic oxidized cpTi discs. At various times of incubation, the cells were collected and then processed for the analysis of mRNA expression of Runx2 using reverse transcription-PCR. RESULTS. The expression pattern of Runx2 mRNA was differed according to the types of surface treatment. When the cells were cultured on the untreated control culture plates, the gene expression of Runx2 was not increased during the experiments. In the case of that the cells were cultured on the machined cpTI discs, the expression level was intermediate at the first day, but increased constitutively to day 5. In cells on sandblasted cpTi discs, the expression level was highest in the first day sample and the level was maintained to 5 days. In cells on anodized cpTi discs, the expression level increased rapidly to 3 days, but decreased slightly in the 5-th day sample. CONCLUSION. Different surface treatments may contribute to the regulation of osteoblast function by influencing the level of gene expression of key osteogenic factors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.199-203
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• 2017

$ZrO_2/PSS$ thin film with a high refractive index was fabricated on a glass substrate by a layer-by-layer self-assembly method. The surface morphology and thickness of the fabricated $ZrO_2/PSS$ thin films were measured as a function of the number of $(ZrO_2/PSS)n$. As the number of $(ZrO_2/PSS)n$ increased from n = 5 to n = 20, RMS roughness decreased from 29.01 nm to 8.368 nm. The $ZrO_2$ thin films exhibited high transmittance of 85% or more; and the 15-bilayer thin film exhibited the highest transmittance among the samples. The transmittance of the fabricated $(ZrO_2/PSS)_{15}$ thin film was ca. 90.8% in the visible range. The refractive index of the glass substrate coated by a $(ZrO_2/PSS)_{15}$ thin film with a thickness of 160 nm increased from ca. 1.52 to 1.74 at the 632 nm wavelength.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.9-13
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• 2008

Bismuth-substituted yttrium iron garnet($Bi_{0.5}Y_{2.5}Fe_5O_{12}$) films were deposited with the aerosol deposition method and their magnetic and optical properties were investigated as a function of the aerosol incident angle. The optical transmittance of Bi:YIG increased about 80% with increasing the aerosol incident angle from 0 degree to 30 degree, due to decrease of the defects which were formed from agglutinations of the Bi:YIG particles inside and/or surface of the film. The coercive force also decreased largely with increasing the aerosol incident angle due to the reduction of the collision energy between the particles and the substrate and the decrease of the defects.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.67-74
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• 2011

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.46-53
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• 2016

The structure of plasma electrolytic oxidation (PEO) coatings was investigated as a function of NaOH concentration in 0.06 M $Na_2SiO_3$ + 0.06 M $Na_3PO_4$ solution by using SEM and epoxy replica method. The PEO film was formed on AZ31 Mg alloy by the application of anodic pulse current with 0.2 ms width and its formation behavior was studied by voltage-time curves during the formation of PEO films. It was found that the addition of NaOH into $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ containing aqueous solution causes a decrease in the PEO film formation voltage, suggesting that dielectric breakdown of the PEO becomes easier with increasing $OH^-$ ion concentration in the solution. With increasing $OH^-$ ion concentration, thickness of the PEO film increased and surface roughness decreased. The size of pores formed in the PEO layer became smaller and the number of cracks in the PEO layer increased with increasing $OH^-$ ion concentration. Based on the experimental results obtained in the work, it is suggested that $OH^-$ ions in the solution can contribute not only to the dielectric breakdown but also to the formation of PEO films in the presence of $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ ions in the solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Journal of Korea Water Resources Association
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• v.36 no.1
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• pp.87-104
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• 2003

A numerical model of surface runoff and river flow has been applied to small- and large-size catchment areas in order to investigate the physical characteristics of river flow during flood period. Several refinements are made on the existing model SIRG-RS for the ways of rainfall input through surface runoff, river junction treatment and the computation of river flow on steep slope. For the computation of frictional forces, employed is the power law of friction factor which is a function of Reynolds number and relative roughness height. The empirical equation of friction factor is developed using recent field data as well as laboratory data. The refined model has been applied to small-size catchment area as well as large-size catchment area, and the computation results are found in good agreement with the observations in both cases.