• The Journal of Engineering Geology
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• v.12 no.2
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• pp.215-234
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• 2002

Groundwater Dam is one of the reliable techniques to get huge amount of groundwater abstraction for municipal, agricultural, drinking, industrial water supply system. It can be a major technique to solve water shortage problems when it based on the sufficient watershed, proper topology, and adequate aquifer distribution and pollution control, Groundwater Dam had initiated its construction by RDC(former KARICO) in early eighties in Korea and 4 of it in total were added more until late eighty. However, this technique has shrunken its application due to gradually decreased yield rate after sever years of construction. After we studied several existing sites precisely, we concluded that the main reason of decreasing yield rate was come form engineering roughness on construction in early nineties. Theoretically, the technique itself seemed to be little detectives however, there were a little application in the fields in Korea. With the recent advance in engineering fields, those defects in construction would be no longer obstacle to construct underground wall and the technique could be a one of major ground water production technique in the future. It is essential to study following items thoroughly before select the appropriate site. The topography and the site of the underground wall, aquifer distribution, the specific technique for wall construction to block groundwater flow effectively and strict quality control during construction are critical. The surface and ground water monitoring data should be collected. Sustainability of the Groundwater Dam with huge groundwater abstraction in long term should be based on the long-term water balance analysis for each site. The water quality, environmental effect analysis and maintenance achedule should be also analyzed and planned in prior. It is suggested that the two consecutive underground wall in the coastal area to prevent seawater intrusion beneath a single wall.

• Korean Journal of Environmental Agriculture
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• v.23 no.4
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• pp.264-271
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• 2004

A three-dimensional numerical mesoscale model by Pielke's estimation (University of Virginia Mesoscale Model, UVMM) was applied to investigate the effects of land characteristics including land-humidity, land-roughness and land-albedo on some micro-climatic coefficients and the air cooling capacity. The results indicated that land-characteristics exposed a significant effect on air cooling. Air cooling effects between in urban and agricultural areas were compared and the effects were much higher in agricultural area. Air cooling effects of weed species were different and when converted into economic values by diesel oil price the effects were ranged from 411 to 816 Won/plant.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.394-400
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• 2014

In this study, we fabricated ITZO thin films on glass substrates with various RF power from 30 to 60W and investigated the electrical, optical and structural properties. ITZO thin film deposited at 50W exhibited the largest figure of merit ($10.52{\times}10^{-3}{\Omega}^{-1}$) and then its resistivity and sheet resistance were $3.08{\times}10^{-4}{\Omega}-cm$ and $11.41{\Omega}/sq.$, respectively. As results of optical characterization, average transmittance of all ITZO thin films were over 80%. ITZO thin films had amorphous structure regardless of the RF power. The FESEM and AFM results showed that all ITZO thin films have a very smooth surface having no cracks and defects and the film deposited at 50W exhibit the smallest surface roughness of 0.254nm. We found that a amorphous ITZO thin film is a very promising material for replacing ITO in the next display device such as OLED.

• International Journal of Highway Engineering
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• v.16 no.1
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• pp.11-19
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• 2014

PURPOSES : The purpose of this article is to investigate the predicted life of jointed concrete pavement (JCP) with two variables effecting on axle load spectra (ALS). The first variable is different data acquisition methods whether using high-speed weigh-in-motion (HS-WIM) or not and the other one is spectra distribution due to overweight enforcement on main-lane of expressway using HS-WIM. METHODS : Three sets of ALS had been collected i) ALS provided by Korea Pavement Research Program (KPRP), which had been obtained without using HS-WIM ii) ALS collected by HS-WIM before the enforcement at Kimcheon and Seonsan site iii) ALS collected after the enforcement at the same sites. And all ALS had been classified into twelve vehicle classes and four axle types to compare each other. Among the vehicle classes, class 6, 7, 10 and 12 were selected as the major target for comparing each ALS because these were considered as the primary trucks with a high rate of overweight loading. In order to analyze the performance of JCP based on pavement life, fatigue crack and International Roughness Index (IRI) were predicted using road pavement design program developed by KPRP and each ALS with same annual average daily traffic (AADT) was applied to design slab thickness. RESULTS : Comparison ALS of KPRP with those of HS-WIM shows that the ALS of KPRP has a low percentage of heavy spectra such as 6~9 tonnes for single axle, 18~21 tonnes for tandem axle and 27~30 tonnes for tridem axle than other two ALS of HS-WIM in most vehicle classes and axle types. It means that ALS of KPRP was underestimated. And after the enforcement, percentage of heavy spectra close to 10 tonnes per an axle are lowered than before the enforcement by the effect of overweight enforcement because the spectra are related to overweight regulation. Prediction results of pavement life for each ALS present that the ALS of HS-WIM collected before the enforcement makes the pavement life short more than others. On the other hand, the ALS of KPRP causes the longest life under same thickness of slab. Thus, it is possible that actual performance life of JCP under the traffic like ALS of HS-WIM could be short than predicted life if the pavement was designed based on ALS provided by KPRP. CONCLUSIONS : It is necessary to choose more reliable and practical ALS when designing JCP because ALS can be fairly affected by acquisition methods. In addition, it is important to extend performance life of the pavement in service by controlling traffic load such as overweight enforcement.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.197-206
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• 2000

The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,1-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.125-125
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• 2010

극성 [0001] 방향으로 성장된 질화물 기반의 LED (light emitting diode) 는 분극현상에 의해 발생하는 강한 내부 전기장의 영향을 받게 된다. 이러한 내부 전기장은 양자우물 내의 전자와 정공의 공간적 분리를 야기하고 quantum confined Stark effect (QCSE)에 의한 발광 파장의 적색 편이가 발생하며 양자효율의 저하를 가져오게 된다. 이러한 문제를 해결하기 위해 InGaN/GaN이나 AlGaN/GaN 양자 우물구조를 GaN의 m-plane (1$\bar{1}$00) 이나 a-plane (11$\bar{2}$0) 등 비극성면 위에 성장하려는 시도를 하고 있다. 그러나 비극성 면의 비등방성 (anisotropy) 으로 인하여 결정성이 높은 비극성 GaN을 성장하는 데에는 많은 어려움이 있다. GaN 층의 표면을 평탄화하고 결정성을 향상시키기 위해서 저온 GaN 또는 AlN 버퍼층을 성장하는 2단계 방법이나 고온 버퍼층을 이용하여 성장하는 연구들이 많이 진행되고 있다. 본 연구에서는 고온 GaN 버퍼층을 이용하여 기존의 2단계 성장과정을 단순화한 비극성 a-plane GaN을 r-plane 사파이어 기판위에 유기금속 화학증착법 (MOCVD)으로 성장하였다. 사파이어 기판위에 AlN 층을 형성하기 위한 nitridation 과정 후 1030 도에서 두께 45 ~ 800 nm의 고온 GaN 버퍼층을 성장하고 총 박막 두께가 2.7 ~ 3 um 가 되도록 a-plane GaN을 성장하여 표면 양상의 변화와 결정성을 확인하였다. 또한 a-plane GaN 박막 성장 시에 성장 압력을 100 ~ 300 torr 로 조절하며 박막 성장의 변화 양상을 관찰하였다. 고온 GaN 버퍼층 성장 두께가 감소함에 따라 결정성은 증가하였으나 표면의 삼각형 형태의 pit 밀도가 증가함을 확인하였다. 또한 성장 압력이 감소함에 따라 표면 pit은 감소하였으나 결정성도 감소하는 것을 확인하였다. 성장 압력과 버퍼층 성장 두께를 조절하여 표면에 삼각형 형태의 pit이 존재하지 않는 RMS roughness 0.99 nm, 관통전위밀도 $1.78\;{\times}\;10^{10}/cm^2$, XRD 반가폭이 [0001], [1$\bar{1}$00] 방향으로 각 798, 1909 arcsec 인 a-plane GaN을 성장하였다. 이 연구를 통해 고온 GaN 버퍼 성장방법을 이용하여 간소화된 공정으로 LED 소자 제작에 사용할 수 있는 결정성 높은 a-plane GaN을 성장할 수 있는 가능성을 확인하였다.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1211-1215
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• 1999

Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using a gas mixture of $C_2F_6$ and $CH_4$ over a range of deposition temperature (room temperature ~ 300$^{\circ}C$). 500$^{\AA}C$ thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the deposition temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both deposition rate and fluorine content decreased linearly with increasing deposition temperature. As the deposition temperature increased from room temperature to 300$^{\circ}C$, the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the deposition temperature from room temperature to 300$^{\circ}C$. The film shrinkage was reduced with increasing deposition temperature. This results ascribed by the increased crosslinking in the films at the higher deposition temperature.

• Resources Recycling
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• v.29 no.1
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• pp.25-34
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• 2020

Electrochemical Quartz Crystal microbalance is a tool that is capable of measuring nanogram-scale mass change on electrode surface. When applying alternating voltage to the quartz crystal with metal electrode formed on both sides, a resonant frequency by inverse piezoelectric effect depends on its thickness. The resonant frequency changes sensitively by mass change on its electrode surface; frequency increase with metal dissolution and decrease with metal deposition on the electrode surface. The relationship between resonant frequency and mass change is shown by Sauerbrey equation so that the mass change during metal dissolution can be measured in real time. Especially, it is effective in the case of reaction mechanism and rate studies accompanied by precipitation, volatilization, compound formation, etc. resulting in difficulties on ex-situ AA or ICP analysis. However, it should be carefully considered during EQCM experiments that temperature, viscosity, and hydraulic pressure of solution, and stress and surface roughness can affect on the resonant frequency. Application of EQCM was shown as a case study on leaching of platinum using aqueous chlorine for obtaining activation energy. A platinum electrode of quartz crystal oscillator with 1000 Å thickness exposed to solution was used as leaching sample. Electrogenerated chlorine as oxidant was purged and its concentration was controlled in hydrochloric acid solution. From the experimental results, platinum dissolution by chlorine is chemical reaction control with activation energy of 83.5 kJ/mol.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.312-320
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• 2003

The basic mechanistic aspects of the interaction and practical considerations related to polymer ablation were briefly reviewed. Photochemical and photothermal effects, which highly depend on laser wavelength have close correlation with each other. In this study, multi-scanning laser ablation processing of polymer with a DPSS (Diode Pumped Solid State) 3rd harmonic Nd:YVO$_4$ laser (355 nm) was developed to fabricate a three-dimensional micro shape. Polymer fabrication using DPSSL has some advantages compared with the conventional polymer ablation process using KrF and ArF laser with 248 nm and 193 nm wavelength. These advantages include pumping efficiency and low maintenance cost. And this method also makes it possible to fabricate 2D patterns or 3D shapes rapidly and cheaply because CAD/CAM software and precision stages are used without complex projection mask techniques. Photomachinability of polymer is highly influenced by laser wavelength and by the polymer's own chemical structure. So the optical characteristics of polymers for a 355 nm laser source is investigated experimentally and theoretically. The photophysical and photochemical parameters such as laser fluence, focusing position, and ambient gas were considered to reduce the plume effect which re-deposits debris on the surface of substrate. These phenomena affect the surface roughness and even induce delamination around the ablation site. Thus, the process parameters were tuned to optimize for gaining precision surface shape and quality. This maskless direct photomachining technology using DPSSL could be expected to manufacture tile prototype of micro devices and molds for the laser-LIGA process.