• Journal of Electrical Engineering and Technology
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• 제3권2호
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• pp.271-275
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• 2008

The MAM(Megasonic Agitated Module) has been fabricated for improving the characteristics of wet etching. The characteristics of the MAM are investigated during the wet etching with and without megasonic agitation in this paper. The adoption of the MAM has improved the characteristics of wet etching, such as the etch rate, etch uniformity, and surface roughness. Especially, the etching uniformity on the entire wafer was less than ${\pm}1%$ in both cases of Si and glass. Generally, the initial root-mean-square roughness($R_{rms}$) of the single crystal silicon was 0.23nm. Roughnesses of 566nm and 66nm have been achieved with magnetic stirring and ultrasonic agitation, respectively, by some researchers. In this paper, the roughness of the etched Si surface is less than 60 nm. Wet etching of silicon with megasonic agitation can maintain nearly the original surface roughness during etching. The results verified that megasonic agitation is an effective way to improve etching characteristics of the etch rate, etch uniformity, and surface roughness and that the developed micromachining system is suitable for the fabrication of devices with complex structures.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.863-866
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• 2013

SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

• 한국진공학회지
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• 제17권4호
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• pp.353-358
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• 2008

AlGaInP 기반 수직형 적색 LED (Light Emitting Diode)의 광추출효율을 증가시키기 위하여 화학적 etching 기술을 이용하여 n-AlGaInP 표면에 삼각꼴 모양의 거칠기를 형성하였다. Etching은 $H_3PO_4$계의 용액을 이용하여 화학적 etching을 진행 하였다. AlGaInP etching은 광추출효율의 증가와 밀접한 관련을 갖고 있으며 AFM (Atomic Force Microscope)을 이용하여 AlGaInP 표면을 분석하여 약 44 nm의 RMS (root-mean-square) 거칠기가 형성됨을 알 수 있었다. 광추출효율은 기존 수직형 적색 LED보다 거칠기가 형성된 수직형 적색 LED에서 41%의 높은 발광 효율을 보임으로써 고효율 수직형 적색 LED의 가능성을 보였다.

• 한국경영과학회:학술대회논문집
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• 대한산업공학회/한국경영과학회 1996년도 춘계공동학술대회논문집; 공군사관학교, 청주; 26-27 Apr. 1996
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• pp.662-666
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• 1996

The variations of the surface topographical parameters for the analysis of the pedestrian slip and fall accidents during the sliding friction between the specially prepared floor specimens and three working shoes were investigated. The profile ordinate data for each flooring specimen were obtained at 1.1 .mu.m intervals using a laser scanning confocal microscope system along to the direction of sliding. A number of surface roughness parameters, that is, the centre line average (c.l.a.) and root mean square (r.m.s.) roughness, maximum height (Rtm), maximum mean peak height (Rpm), maximum mean depth (Rvm), and average asperity slope were calculated using a computer program and compared with the dynamic friction results. The analysis showed that the surface parameters undergo marked variations during the sliding process, but the variations were statistically significant. It was found that amongst various surface parameters, the maximum depth (Rvm) and the average asperity slope of the asperities were the biggest variation during the sliding proceeding. This result confirms the previous study and may suggests a new approach to monitoring the flooring environments with their service as the effort to reduce the pedestrain slip accident.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.805-811
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• 2000

Reliability of PBGA(plastic ball grid array) package is weak compared with normal plastic packages. The low reliability is caused by low resistance to the popcorn cracking, which is generated by moisture absorption in PCB(prited circuit board). In this paper, plasma treatment process was used and we analyzed its effects to interface adhesion. The contents of C and Cl decrease after plasma treatment but those of O, Ca, N relatively increase. The plasma treatment improves the adhesion between EMC(epoxy molding compound) and PCB(solder mask). The grade of improvement was over 100% Max, which depends on the properties of EMC. The RMS(root mean square) roughness value of the solder mask surface increases to plasma treatment. There is little difference of adhesion in RF power and treatment time.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.450-453
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• 2020

In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

• 한국진공학회지
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• 제8권3A호
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• pp.218-223
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• 1999

We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

• 한국표면공학회지
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• 제53권6호
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• pp.280-284
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• 2020

Electron beam irradiation is widely used as a type of surface modification technology to advance surface properties. In this study, the effect of electron beam irradiation on properties, such as surface hardness, wear resistance, roughness, and critical load of Titanium Aluminium nitride (TiAlN) films was investigated. TiAlN films were deposited on the SKD-61 substrate by using cathode arc ion plating. After deposition, the films were bombarded with intense electron beam for 10 minutes. The surface hardness was increased up to 4520 HV at electron irradiation energy of 1500 eV. In addition, surface root mean square (RMS) roughness of the films irradiated at 1500 eV shows the lowest roughness of 484 nm in this study.

• 한국환경과학회지
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• 제23권6호
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• pp.1199-1211
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• 2014

The momentum flux and the sensible heat flux were measured with the scintillometers and ultrasonic anemometers at 6 sites of which surface characteristics like roughness length and zero-displacement are different each other. We estimated the momentum flux and the sensible heat flux based on the bulk transfer method with the drag coefficient and the heat transfer coefficient calculated from the temperature and wind speed at two heights. The variation of bulk transfer coefficients showed a remarkable difference depending on the atmospheric stability which is less influenced by the zero-displacement than the roughness length. The estimated sensible heat fluxes were in good agreement with those measured at 3 m, showing 23.7 $Wm^{-2}$ of the root mean square error that is less than 10% of its maximum. Since the estimated momentum flux is not only effected by drag coefficient but also by wind speed square, the determination of wind speed in the bulk transfer method is critical.

• 대기
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• 제32권3호
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• pp.179-189
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• 2022

The purpose of this study is to build and evaluate a high-resolution (50 m) KMAPP (Korea Meteorological Administration Post Processing) reflecting building data. KMAPP uses LDAPS (Local Data Assimilation and Prediction System) data to detail ground wind speed through surface roughness and elevation corrections. During the detailing process, we improved the vegetation roughness data to reflect the impact of city buildings. AWS (Automatic Weather Station) data from a total of 48 locations in the metropolitan area including Seoul in 2019 were used as the observation data used for verification. Sensitivity analysis was conducted by dividing the experiment according to the method of improving the vegetation roughness length. KMAPP has been shown to improve the tendency of LDAPS to over simulate surface wind speeds. Compared to LDAPS, Root Mean Square Error (RMSE) is improved by approximately 23% and Mean Bias Error (MBE) by about 47%. However, there is an error in the roughness length around the Han River or the coastline. Accordingly, the surface roughness length was improved in KMAPP and the building information was reflected. In the sensitivity experiment of improved KMAPP, RMSE was further improved to 6% and MBE to 3%. This study shows that high-resolution KMAPP reflecting building information can improve wind speed accuracy in urban areas.