• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.687-694
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• 2006

We report on the fabrication of organic-based flexible displays using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on the polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a $Ar/O_2$ ambient. Both x-ray diffraction (XRD) and high resolution electron microscope (HREM) examination results show that the IZO anode film grown at room temperature Is complete amorphous structure due to low substrate temperature. A sheet resistance of $35.6\Omega/\Box$, average transmittance above 90 % in visible range, and root mean spare roughness of $6\sim10.5\AA$ were obtained even in the IZO anode film grown on PC substrate at room temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/Glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.348-348
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• 2008

In recent, the concept of system-on-package (SOP) for highly integrated multifunctional systems has been paid attention to for the miniaturization and high frequency of electronic devices. In order to realize SOP, co-integration of passive devices, such as capacitors, resistors and inductors, and active devices should be achieved. If ceramic thick films can be grown at room temperature, we expect to be able to overcome many problems in conventional fabrication processes. So, we focused on the aerosol deposition method (ADM) as room temperature fabrication technology. ADM is a novel ceramic coating method based on the Room Temperature Impact Consolidation (RTIC) phenomena. This method has a wide range potential for fabrication of co-integration of passive and active devices. In this paper, I will present the future potential of ADM introducing various ceramic dielectric thick films for the integration of electronic ceramics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1056-1060
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• 2005

We investigated the fabrication and characteristics of the nitride-based spin-polarized LEDs with room-temperature ferromagnetic (Ga,Mn)N layer as a spin injection source. The (Ga,Mn)N thin films having room-temperature ferromagnetic ordering were found to exhibit the negative MR and anomalous Hall resistance up to room temperature, revealing the existence of spin-polarized electrons in (Ga,Mn)N films at room temperature. The electrical characteristics in the spin LEDs did not degraded in spite of the insertion of the (Ga,Mn)N layer into the LED structure. In EL spectra of the spin LEDs, it is confirmed that the devices produce intense EL emission at 7 K as well as room temperature. These results are expected to open up new opportunities to realize room-temperature operating semiconductor spintronic devices.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.73-77
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• 2004

This paper presents a PC-based controller of industrial SFFS(Solid Freeform Fabrication System). The SFFS has multiple sub-controllers for the building room, the powder room, the temperature, and the density of oxygen in the chambers. Hence the main PC-based controller should effectively and timely send commands to the sub-controllers, and monitor the overall SLS process. The required actuators and sensors are selected to optimize the overall performance of the SFFS.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.186-189
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• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.7
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• pp.602-609
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• 2008

This paper presents experimental optimization of process parameters for a newly developed SFF(Solid Freeform Fabrication) system. Two critical process parameters, layering thickness and curing period, which have a large effect on the quality of the product, are optimized through experiments. Specimens are produced using layering thicknesses of 60, 80, 100, 120, 140, and $160\;{\mu}m$ and curing periods of 0, 10, 20, and 30 minutes under the same processing conditions, i.e., build-room temperature, feed-room temperature, roller speed, laser power, scan speed, and scan spacing. The specimens are tested to compare and analyze performance indices such as thickness accuracy, flatness, stress-strain characteristics, and porosity. The experimental result indicates that layering thickness of $80{\sim}100\;{\mu}m$ and curing period of $20{\sim}30$ minutes are recommended for the developed industrial SFF system.

• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2245-2248
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• 2009

This paper demonstrates room temperature chemical vapor deposition (RTCVD) for fabricating titania inverse opals. The colloidal crystals of monodisperse polymer latex spheres were used as a sacrificial template. Titania was deposited into the interstices between the colloidal spheres by altermate exposures to water and titanium tetrachloride (Ti$Cl_4$) vapors. The deposition was achieved under atmospheric pressure and at room temperature. Titania inverse opals were obtained by burning out the colloidal template at high temperatures. The filling fraction of titania was controlled by the number of deposition of Ti$Cl_4$ vapor. The morphology of inverse opals of titania were investigated. The optical reflection spectra revealed a photonic band gap and was used to estimate the refractive index of titania.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.29-54
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• 2005

Consolidation of ceramic particles at room temperature. Reduction of crystallite size and formation of nano-crystalline. Applicable to Integrate functionalceramic materials with metals and Si structure and to fabricate MEMS devises

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.558-561
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• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.558-561
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• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.