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http://dx.doi.org/10.4313/JKEM.2005.18.11.1056

Emission of Spin-polarized Light in Nitride-based Spin LEDs with Room-temperature Ferromagnetic (Ga,Mn)N Layer  

Ham, Moon-Ho (연세대학교 금속공학과)
Myoung, Jae-Min (연세대학교 금속공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.11, 2005 , pp. 1056-1060 More about this Journal
Abstract
We investigated the fabrication and characteristics of the nitride-based spin-polarized LEDs with room-temperature ferromagnetic (Ga,Mn)N layer as a spin injection source. The (Ga,Mn)N thin films having room-temperature ferromagnetic ordering were found to exhibit the negative MR and anomalous Hall resistance up to room temperature, revealing the existence of spin-polarized electrons in (Ga,Mn)N films at room temperature. The electrical characteristics in the spin LEDs did not degraded in spite of the insertion of the (Ga,Mn)N layer into the LED structure. In EL spectra of the spin LEDs, it is confirmed that the devices produce intense EL emission at 7 K as well as room temperature. These results are expected to open up new opportunities to realize room-temperature operating semiconductor spintronic devices.
Keywords
Spin-polarized light emitting diode; Diluted magnetic semiconductor; (Ga,Mn)N; Nitride-based semiconductor; Spin polarization; Ferromagnetism;
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1 S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, 'Spintronics: A spin-based electronics vision for the future', Science, Vol. 294, No. 5546, p. 1488, 2001
2 H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schomherr, and K. H. Ploog, 'Room-temperature spin injection from Fe into GaAs', Phys. Rev. Lett., Vol. 87, No. 1, p. 016601, 2001
3 Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, 'Electrical spin injection in a ferromagnetic semiconductor heterostructure', Nature, Vol. 402, No. 6763, p. 790, 1999
4 T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, 'Zener model description of ferromagnetism In zinc-blende magnetic semiconductors', Science, Vol. 287, No. 5455, p. 1019, 2000
5 G. T. Thaler, M. E. Overberg, B. Gila, R. Frazier, C. R. Abernathy, S. J. Pearton, J. S. Lee, S. Y. Lee, Y. D. Park, Z. G. Khim, J. Kim, and F. Ren, 'Magnetic properties of n-GaMnN thin films', Appl. Phys. Lett., Vol. 80, No. 21, p. 3964, 2002
6 M. H. Ham, M. C. Jeong, W. Y. Lee, J. M. Myoung, J. M. Lee, J. Y. Chang, and S. H. Han, 'Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films', J. Electron. Mater., Vol. 33, No.2, p. 114, 2004
7 S. Dhar, O. Brandt, A. Trampert, L. Daweritz, K. J. Friedland, K. H. Plaog, J. Keller, B. Beschoten, and G. Guntherodt, 'Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H - SiC(0001) by reactive molecular-beam epitaxy', Appl. Phys. Lett., Vol. 82, No. 13, p. 2077, 2003
8 H. Ohno, 'Making nonmagnetic semiconductors ferromagnetic', Science, Vol. 281, No. 5379, p. 951, 1998
9 J. Y. Chang, G. H. Kim, J. M. Lee, S. H. Han, H. J. Kim, W. Y. Lee, M. H. Ham, K. S. Huh, and J. M. Myoung, 'Transmission electron microscopy study on ferromagnetic (Ga,Mn)N epitaxial films', J. Appl. Phys., Vol. 93, No. 10, p. 7858, 2003