• Proceedings of the KSRS Conference
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• v.1
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• pp.520-523
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• 2006

Whereas it is well known that the surface roughness parameters, the RMS height and the correlation length, of a natural soil surface are underestimated with a short surface profile, it is not clear how much the underestimated surface parameters affect the backscattering coefficients of the surface for various incidence angles and polarizations. The backscattering coefficients of simulated and measured surface profiles are computed using the integral equation method (IEM) and analyzed in this paper to answer this question. It is shown that the RMS error of the backscattering coefficients between 5-m- and 1-m-long measured surface profiles is 1.7 dB for vv-polarization and 0.5 dB for hh-polarization at a medium range of incidence angle ($15^{\circ}{\leq}{\theta}{\leq}70^{\circ}$), while the surface roughness parameters are significantly reduced; from 2.4 cm to 1.5 cm for the RMS height s and from 35.1 cm to 10.0 cm for the autocorrelation length l. This result is verified with numerous simulations with various roughness conditions and various wavelengths.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.458-461
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• 2014

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.392-392
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• 2010

In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.332-335
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• 1997

With the advance of precision technique, the optical system is more precise and complex and the machining method of optical element which is composed of micro-grooves is developed. Especially, the method of micro-grooving using diamond tool is used widely owing to many merit, but has problems of damage of surface roughness due to tool wear and tool fracture. This paper deals with state monitoring using AE RMS in the micro-grooving. The change of AE RMS is very small with increment of cutting velocity and depth of cut. In spite of constance magnitude of principal force in machining using diamond tool of tool wear and tool fracture, AE RMS is highly fluctuated. Because changing of cutting state has relevance to surface roughness profile, surface toughness profile is expected using AE RMS.

• Tunnel and Underground Space
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• v.12 no.4
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• pp.268-276
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• 2002

In this study, a 3D coordinate measurement system equipped with a laser displacement meter for digitizing rock joint surface was established and the digitized data were used to calculate several roughness parameters. The parameters used in this study were micro avenge inclination $angle(i_{ave})$, average slope of joint $asperity(SL_{ ave})$, root mean square of $i-angle(i_{rms})$, standard deviation of height(SDH), standard deviation of $i-angle(SD_i)$, roughness profile $index(R_P)$, and fractal dimension(D). The relationships between the roughness parameters based on the digitzation of the surface profile were analyzed. Since the measured value varied according to the degree of reflection and the variation of colors at the measuring point, rock joint surface was painted in white to minimize the influence of the surface conditions. The comparison of the measured values and roughness parameters before and after painting revealed the better consequence from measurement on the painted surfaces. Also, effect of measuring interval was studied. As measured interval was increased, roughness parameters were exponentially decreased. The incremental sequence of degree of decrease was $SDH\; i_{ave},\; i_{rms},\; SD_i,\;and\; R_ p-1$. As a result of comparison of parameters from pin-type measurement system and laser type measurement system, all value of parameters were higher when laser-type measurement system was used, except SDH.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.58-66
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• 2007

In this paper, the process effect on the RMS roughness of the $HfO_2$ thin films grown by metal organic molecular beam epitaxy was investigated. The measured RMS roughness is examined to characterize the surface morphology. In order to analyze the factor effects, the significant factors of both the main and the interaction effects were extracted through the effect analysis. In order to compare the regression model with the variable transformation, the effect of each factor and the model efficiency are calculated. The methodology can allow us to analyze the effects between the process parameters related to the process variability.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.1
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• pp.9-12
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• 2006

A spectral analysis and numerical simulation are employed to assess the effects of the stylus tip radius on measuring surface profiles. Original profiles with fractal spectral densities are generated and then are numerically traced with circular tipped stylus. Instead of their spectral densities, the accumulative power spectrums of traced profiles are analyzed. It is shown that the minimum wavelength of traced profile relates directly to the radius r of the stylus tip and the root-mean-square (rms) roughness ${\sigma}_o$ of original profile. From this accumulation spectral analysis, a formula is developed to estimate the minimum wavelength of traced profile. By using the concept of the minimum wavelength, an appropriate stylus tip radius can be chosen for the given rms roughness ${\sigma}_o$ of the profile.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.1
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• pp.91-97
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• 2013

The input parameters of scattering models for computing the backscattering coefficients of earth terrains are mainly soil moisture and surface roughness. The backscattering coefficients of soil surfaces are more sensitive to surface roughness than soil moisture. In this study, we propose a precise measurement method for roughness parameters and analyze measurement errors. We measured surface roughness using a pin-board profiler(1 m, 0.5 cm interval) and a laser profiler(1 m, 0.25 cm interval). The measurement differences between two profilers in an average sense are 0.097 cm for root-mean-square (RMS) height and 1.828 cm for correlation length. The analysis of the correlation functions and relative errors shows that the laser measurements are more stable than the pin-board measurements. The differences of the calculated backscattering coefficients using a surface scattering model between pin-board and laser profiler measurements are less than 1 dB.

• Journal of the Korean Society for Precision Engineering
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• v.7 no.3
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• pp.37-47
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• 1990

In accordance with the high precision of mechanical elements, it has been required to high precision in surface roughness measurement and, therefore, stylus tip radius is manufa- ctured less than 2 .mu. m through ion sputter machining. In this experiment, by suing ion sputter machined stylus pf fine tip, radius and lapping machined stylus, surface roughness of standard specimens, silicon wafer were measured and then Rmax, Ra, RMS value were investi- gatedaccording to the variation of tip radius of stylus. As a result, measuring error due to the variation of stylus tip radius in surface roughness measurement was decreased by using ion sputter machined stylus and also the measuring accuracy was improved. And the measuring variation of Ra, RMS calculated from correlation coefficient lager than 0.9 on the wave of short period and amplitude using ion sputter machined stylus of fine tip radius.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.886-890
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• 2003

The etching characteristics of a LiNbO$_3$ single crystal have been investigated using helicon wave plasma source with bias power and the mixture of CF$_4$, HBr, SF$_{6}$ gas parameters. The etching rate of LiNbO$_3$ with etching parameters was evaluated by surface profiler. The etching surface was evaluated by Atomic Force Microscopy (AFM). The surface morphology of the etched LiNbO$_3$ changed with bias power and the mixture of CF$_4$/Ar/Cl$_2$, HBr/Ar/Cl$_2$, and SF$_{6}$/Ar/Cl$_2$ parameters. Optimum etching conditions, considering both the surface flatness and etch rate were determined.