• Title/Summary/Keyword: Ring oscillator

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Design of High-Precision Ring Oscillator FPGA for TDC Time Measurement (TDC 시간 측정을 위한 고정밀 Ring Oscillator FPGA 설계)

  • Jin, Kyung-Chan
    • Proceedings of the IEEK Conference
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    • 2007.07a
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    • pp.223-224
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    • 2007
  • To develop nuclear measurement system with characteristics including both re-configuration and multi-functions, we proposed a field programmable gate array (FPGA) technique to implement TDC which is more suitable for high energy Physics system. In TDC scheme, the timing resolution is more important than the count rates of channel. In order to manage pico-second resolution TDC, we used the delay components of FPGA, utilized the place and route (P&R) delay difference, and then got two ring oscillators. By setting P&R area constraints, we generated two precise ring oscillators with slightly different frequencies. Finally, we evaluated that the period difference of these two ring oscillators was about 60 pico-seconds, timing resolution of TDC.

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Design of Ku-Band Phase Locked Harmonic Oscillator (Ku-Band용 위상 고정 고조파 발진기 설계)

  • Lee Kun-Joon;Kim Young-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.1 s.92
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    • pp.49-55
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    • 2005
  • In this paper, the phase locked harmonic oscillator(PLHO) using the analog PLL(Phase Locked Loop) is designed and implemented for a wireless LAN system. The harmonic oscillator is consisted of a ring resonator, a varactor diode and a PLL circuit. Because the fundamental fiequency of 8.5 GHz is used as the feedback signal for the PLL and the 2nd harmonic of 17.0 GHz is used as the output, a analog frequency divider for the phase comparison in the PLL system can be omitted. For the simple PLL circuit, the SPD(Sampling Phase Detector) as a phase comparator is used. The output power of the phase locked harmonic oscillator is 2.23 dBm at 17 GHz. The fundamental and 3rd harmonic suppressions are -31.5 dBc and -29.0 dBc, respectively. The measured phase noise characteristics are -87.6 dBc/Hz and -95.4 dBc/Hz at the of offset frequency of 1 kHz and 10 kHz from the carrier, respectively.

A Large-Signal Analysis of a Ring Oscillator with Feed-Forward and Negative Skewed Delay (부 스큐 지연 방식과 피드포워드 방식을 사용한 링 발진기의 대신호 해석)

  • Lee, Jeong-Kwang;Yi, Soon-Jai;Jeong, Hang-Geun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.7
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    • pp.1332-1339
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    • 2010
  • This paper presents a large signal analysis of ring-type oscillators with feed forward and negative skewed delay scheme. The analysis yields the frequency increase factor due to two schemes. The large signal analysis is needed, because small signal model is limited to the initial stage of oscillation[1]. For verification of the frequency increase factor, simulation were done under the same conditions for the two different types of ring oscillators, i.e., with and without feed forward and negative skewed delay scheme. Simulation results are in good agreement with predictions based on analysis.

Analysis Simultaneously Switching Density Using Ring Oscillator (Ring Oscillator를 이용한 신호의 동시 스위칭 밀도 분석)

  • Jeong, Sang-Nam;Baeg, Sang-Hyeon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.9
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    • pp.79-84
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    • 2008
  • Switching speeds increase in both frequency and the transition rate of edges. Inadequate forecast for simultaneous switching signals may cause designing the power planes without sufficient current capability. The delay of critical signals in a chip can be therefore inadvertently increased and the situation makes it hard to debug issues. It is important to find the degree of increased switching during the debugging or chip characterization phases. This paper proposes the interpolation method to predict the switching density in a design. The interpolation was achieved by utilizing the dependencies between switching frequency and the delay appeared in a ring oscillator. The ring oscillator was primarily used to accumulate the effects of the ground bounce by higher switching. The result of interpolation was demonstrated using DongBu Hitec 0.18um CMOS technology.

A ×49 Frequency Multiplier Based on a Ring Oscillator and a 7-Push Multiplier (링 발진기와 7-푸쉬 체배기 기반의 ×49 주파수 체배기)

  • Song, Jae-Hoon;Kim, Byung-Sung;Nam, Sangwook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.12
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    • pp.1108-1111
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    • 2015
  • In this paper, a ${\times}49$ frequency multiplier based on a ring oscillator and a multi-push multiplier is presented. The proposed ${\times}49$ frequency multiplier consists of two ${\times}7$ frequency multipliers and these multiplier is connected by injection-locking technique. Each ${\times}7$ frequency multiplier consists of a ring oscillator with 14-phase output signal and 7-push frequency multiplier requiring 14-phase input. The proposed ${\times}49$ frequency multiplier provides 2.78~2.83 GHz output signal with 56.7~57.7 MHz input signal. This operation frequency is defined that the output power difference between the carrier and the spur is above 10 dB. The proposed chip consumes 13.93 mW.

Design of a high speed and high intergrated ISL(Intergrated Schottky Logic) using a merged transistor (병합트랜지스터를 이용한 고속, 고집적 ISL의 설계)

  • 장창덕;이용재
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 1999.05a
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    • pp.415-419
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    • 1999
  • Many bipolar logic circuit of conventional occurred problem of speed delay according to deep saturation state of vertical NPN Transistor. In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. The structure of Gate consists of the vertical NPN Transistor, substrate and Merged PNP Transistor. In the result, we fount that tarriers which are coming into intrinsic Base from Emitter and the portion of edge are relatively a lot, so those make Base currents a lot and Gain is low with a few of collector currents because of cutting the buried layer of collector of conventional junction area. Merged PNP Transistor's currents are low because Base width is wide and the difference of Emitter's density and Base's density is small. we get amplitude of logic voltage of 200mv, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26nS in AC characteristic output of Ring-Oscillator connected Gate.

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Design of a Low-Power Low-Noise Clock Synthesizer PLL (저전력 저잡음 클록 합성기 PLL 설계)

  • Park, J.K.;Shim, H.C.;Park, J.T.;Yu, C.G.
    • Proceedings of the KIEE Conference
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    • 2006.10c
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    • pp.479-481
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    • 2006
  • This paper describes a 2.5V, 320MHz low-noise and low-power Phase Locked Loop(PLL) using a noise-rejected Voltage Controlled ring Oscillator(VCO) fabricated in a TSMC 0.25um CMOS technology. In order to improve the power consumption and oscillation frequency of the PLL, The VCO consist of three-stage fully differential delay cells that can obtain the characteristic of high speed, low power and low phase noise. The VCO operates at 7MHz -670MHz. The oscillator consumes l.58mA from a 320MHz frequency and 2.5V supply. When the PLL with fully-differential ring VCO is locked 320MHz, the jitter and phase noise measured 26ps (rms), 157ps (p-p) and -97.09dB at 100kHz offset. We introduce and analysis the conditions in which ring VCO can oscillate for low-power operation.

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High Performance of Printed CMOS Type Thin Film Transistor

  • You, In-Kyu;Jung, Soon-Won
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.17.2-17.2
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    • 2010
  • Printed electronics is an emerging technology to realize various microelectronic devices via a cost-effective method. Here we demonstrated a high performance of p-channel and n-channel top-gate/bottom contact polymer field-effect transistors (FETs), and applications to elementary organic complementary inverter and ring oscillator circuits by inkjet processing. We could obtained high field-effect mobility more than $0.4\;cm^2/Vs$ for both of p-channel and n-channel FETs, and successfully measured inkjet-printed polymer inverters. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. Optimized CMOS ring oscillators with p-type and n-type polymer transistors showed as high as 50 kHz operation frequency. This research was financially supported by development of next generation RFID technology for item level applications (2008-F052-01) funded by the ministry of knowledge economy (MKE).

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Design of the Microwave Oscillator with the C type DGS Resonator (C형태의 DGS 공진기를 이용한 초고주파 발진기 설계)

  • Kim, Gi-Rae
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.8 no.4
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    • pp.243-248
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    • 2015
  • Since phase noise is one of the most important parameters in the design of microwave oscillators, several methods have been proposed to reduce the phase noise. These methods have focused on improving the quality factor of resonators, which result in low phase noise oscillators. Dielectric resonators have been widely used for low phase noise in microwave oscillators due to their high quality factor. However this cannot be used in MMIC oscillators because they have a 3D structure. In this paper, to overcome this problem a novel resonator using open ring type DGS is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed DGS resonator. The open ring type DGS resonator is composed of DGS cell etched on ground plane under $50{\Omega}$ microstrip line. At the fundamental frequency of 5.8GHz, 6.1dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with ring type DGS resonator. The phase noise characteristics of oscillator is improved about 96.5dB compared to one using the general ${\lambda}/4$ microstrip resonator.

A High-Speed Voltage-Controlled Ring-Oscillator using a Frequency Doubling Technique (주파수 배가 방법을 이용한 고속 전압 제어 링 발진기)

  • Lee, Seok-Hun;Hwang, In-Seok
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.47 no.2
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    • pp.25-34
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    • 2010
  • This paper proposed a high-speed voltage-controlled ring-oscillator(VCRO) using a frequency doubling technique. The design of the proposed oscillator has been based on TSMC 0.18um 1.8V CMOS technology. The frequency doubling technique is achieved by AND-OR operations with 4 signals which have $90^{\circ}$ phase difference one another in one cycle. The proposed technique has been implemented using a 4-stage differential oscillator compose of differential latched inverters and NAND gates for AND and OR operations. The differential ring-oscillator can generate 4 output signals, which are $90^{\circ}$ out-of-phase one another, with low phase noise. The ANP-OR operations needed in the proposed technique are implemented using NAND gates, which is more area-efficient and provides faster switching speed than using NOR gates. Simulation results show that the proposed, VCRO operates in the frequency range of 3.72 GHz to 8 GHz with power consumption of 4.7mW at 4GHz and phase noise of ~-86.79dBc/Hz at 1MHz offset. Therefore, the proposed oscillator demonstrates superior performance compared with previous high-speed voltage-controlled ring-oscillators and can be used to build high-performance frequency synthesizers and phase-locked loops for radio-frequency applications.