• Journal of the Korean Magnetics Society
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• v.10 no.6
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• pp.280-294
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• 2000

[(300nm)Ta/(500nm)NdFeB/(300nm)Ta] thin films were deposited at 5 mTorr Ag gas pressure by RF-DC magnetron sputtering, and their magnetic properties were investigated. The [Ta/NdFeB/Ta] films deposited on heated Si substrates showed high perpendicular anisotropy and excellent hard magnetic properties. The films sputtered at tile substrate temperature of T$\sub$s/=650$^{\circ}C$ and 700$^{\circ}C$ showed (BH)$\sub$max/=20 MGOe and $\sub$i/H$\sub$c/= 18.9 kOe along the perpendicular direction to the film plane, respectively.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.312-320
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• 1999

Effect of deposition conditions on the magnetic properties of SmCo/Cr prepared by a RF magnetron sputtering method was studied. We obtained the maximum coercivity of 3.2 kOe in the sample of Cr(50 nm)/SmCo(40 nm, 50W, 20 mT)/Cr(150 nm, 100 W, 30 mT). The coercivity of the SmCo/Cr depends largely on the roughness of the Cr underlayer and the composition of SmCo. The roughness of the Cr underlayer increased with increasing the Ar pressure and thickness, and promoted the isolation of SmCo grains which resulted in an enhanced coercivity. The composition of the SmCo was changed with RF power and Ar pressure due to the mass difference between Sm and Co and the resputtering phenomena. The maximum coercivity was obtained in the composition of about 20 at.% Sm. The mechanism of magnetization reversal of the present SmCo films changed from domain wall motion to domain rotation as the RF power and the Ar pressure increase. This was though to be due to the defects, such as the roughness of Cr surface, porous column boundaries etc., which inhibit domain wall movement.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.140-143
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• 2006

Single crystalline $CoFe_2O_4$ thin films on (100) MgO substrates were fabricated using a rf magnetron sputtering method. The deposited films were investigated for their crystallization by X-ray diffraction, Rutherford back-scattering spectroscopy and field emission scanning electron microscopy. When a cobalt ferrite film was deposited at the substrate temperature of $600^{\circ}C$, squared grains of about 200 nm were uniformly distributed in the film. However, the grains became irregular and their sizes also varied from 30 to 150 nm when the substrate temperature was $700^{\circ}C$. Hysteresis loops of a film deposited at $600^{\circ}C$ showed that the magnetically easy axis of the film was perpendicular to the substrate surface. Except for the squareness ratio, magnetic properties of the cobalt ferrite films grown by the present rf sputtering method were as good as those of the films prepared by a laser ablation method: The in-plane and perpendicular coercivities were 283 and 6800 Oe, respectively. As the thickness of the deposited film increased twice, the saturation magnetization became double but the coercivity remained unchanged. However, deposition of the Co ferrite films with a higher rf powder decreased the squareness ratio and the perpendicular coercivity of the films.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.133-134
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• 2010

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.195-199
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• 1998

Magnetic and Magneto-Optical properties of Co-based MnSbPt thin films prepared by R.F Sputtering were investigated. In this study, the optimum heat treatment condition was found to be $300^{\circ}C$-4hours under a $5\times10^{-6}$ Torr, but perpendicularly magnetized thin films could not be obtained. Coercive force showed maximum value of about 5000e at $250\AA$ Co thickness but the value is not enough for practical use of the thin film. Heat treated Co-based MnSbPt thin film shows 0.78 degree of Kerr rotation angle for 700nm of incident wavelength.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.221-228
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• 1993

The general requirements of recording media include recording performance, environmental stability, runnability on the drive or deck, and manufacturability. CoCrMo thin films were prepared using RF sputtering system for a study on chemical stability. Surface degradation of the CoCrMo thin film was studied by SEM, XPS and AES. Surface degradation was found to be dependent of sputtering condition and Mo content. Addition of Mo to CoCr thin film improved dramatically its surface degradation resistance in dilute sulfuric acid, as indicated by active-passive transition appeared in electrochemical polarization curve. Futhermore, the passive current density was decreased with increasing Mo content. The reduction in a number density of corrosion sites by Mo addition vms observed, after accelerated corrosion test. AES survey indicated that corrosion occured on the site with Cr depletion and highly concentrated chloride ions.

• Journal of Magnetics
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• v.12 no.4
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• pp.149-151
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• 2007

The AlCrN films were grown by RF reactive sputtering method under the selected conditions. The Cr concentration was varied by the number of Cr pieces placed on the Al target. The sample quality has been studied by XRD, Auger spectroscopy, optical absorption and electrical resistant measurements. The XRD and Auger results show that the samples consist of a major phase with the $Al_{1-x}Cr_xN$ formula, which has a hexagonal structure, and a few percents at. of oxygen, which may form $Al_2O_3$. There exist the Cr clusters in the samples with high concentration of Cr. The optical absorption measurement provides the information about the band gap that relates strongly to the quality of samples. The quality of samples is also clearly reflected in electrical measurement, i.e., the temperature dependence of resistance exhibits a semiconductor characteristic only for the samples that have no Cr cluster. In these cases, the values of ionization energies $E_a$ can be derived from R(T) plots by using the function R(T) = Ro exp $(E_a/k_BT)$.

• Journal of the Korean Magnetics Society
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• v.16 no.4
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• pp.197-200
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• 2006

Amorphous alloys of Co-rich magnetic amorphous films are well known as thpical soft magnetic alloys. They are used for many kinds of electric and electronic parts such as magnetic recording heads, transformers and inductors. CoFeHfO thin films were prepared by RF magnetron reactive sputtering. The films were deposited onto Si(100) substrates with a power of 300 W at room temperature. The reactive gas was introduced up to 10% ($O_2$/(Ar + $O_2$)) during deposition, and the $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film exhibit excellent soft magnetic properties : saturation magnetization ($4{\pi}M_s$) of 19kG, magnetic coercivity ($H_c$) of 0.37 Oe, anisotropy field ($H_k$) of 48.62 Oe, and an electrical property is also shown to be as high as 300 ${\mu}{\Omega}cm$. It is assumed that the good soft magnetic properties of $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film results from high electrical resistivity and large anisotropy field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.7-10
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• 1992

CoNiCr/Cr and CoCrTa/Cr for longitudinal magnetic recording media were. prepared on Coming 7059 glass by RF magnetron sputtering. The thickness of Cr underlayer was varied from 500 to $3000{\AA}$ and. that of magnetic layer was $700{\AA}$. Coercivity and squareness were measured using V.S.M.(vibrating sample magnetometer). The coercivity of films increased with increasing Cr thickness when the films were unannealed. The coercivity of the films annealed in a 10 mtorr vacuum increased initially with annealing time and then saturated with further increase in annealing time. The coercivity value difference between the unannealed and annealed films increased with increasing the thickness of Cr underlayer No significant change was found in squareness after anneal, regardless of Cr underlayer thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.50-54
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• 2003

The output characteristics of thin film NiO/NiFe bilayered magnetoresistive device have been measured as a function of the direction of external magnetic field. Each layer was fabricated by rf magnetron sputtering method, and especially, the under layer, NiO, was fabricated under the in-situmagnetic field of about 1000Oe. The magnetoresistive devices were designed with the angle of 45degree between the direction of current of the device pattern and the induces magnetic field in the NiO film layer. The output of the devices had a good linearity when the devices were placed on the external magnetic field perpendicular to induced field direction and also 45 degree with the currenr path direction.