• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.5 s.335
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• pp.9-14
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• 2005

Simulation method for a pure radio-frequency (rf) mode of reflection-type and a pure rf mode of transmission-type radio-frequency single-electron transistor (RF-SET) operation is introduced. In this method, the solutions of differential equations based on Kirchhoff's law are obtained self-consistently at frequency-domain. Also, the steady-sate single-electron transistor (SET) current model and the time-dependent SET current model are used in this method. The reflected wave of a typical reflection-type RF-SET and the transmitted wave of a typical transmission-type RF-SET are calculated, and the accuracy of our developed method including the steady-state SET current model is verified with the method introduced by reference 2. At high frequency over GHz, results of our developed method including the time-dependent SET current model are considerably different from that including the steady-state SET current model. At high frequency over GHz, an exact time-dependent SET current model is needed to analyze RF-SET operation.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.189-194
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• 2017

Effects of gas injection scheme and rf driving current configuration in a dual turn inductively coupled plasma (ICP) system were analyzed by 3D numerical simulation using CFD-ACE+. Injected gases from a tunable gas nozzle system (TGN) having 12 horizontal and 12 vertical nozzles showed different paths to the pumping surface. The maximum velocity from the nozzle reached Mach 2.2 with 2.2 Pa of Ar. More than half of the injected gases from the right side of the TGN were found to go to the pump without touching the wafer surface by massless particle tracing method. Gases from the vertical nozzle with 45 degree slanted angle soared up to the hottest region beneath the ceramic lid between the inner and the outer rf turn of the antenna. Under reversed driving current configuration, the highest rf power absorption region were separated into the two inner islands and the four peaked donut region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.560-566
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• 2004

In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of －100V∼＋100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.62-69
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• 1998

The general degradation model has been applied to analyze the hot carrier induced degradation of the DC and RF characteristics of RF-nMOSFET. The degradation of cut-off frequency has been severer than the degradation of bulk MOSFET drain current. The value of the degradation rate n and the degradation parameter m for RF-nMOSFET has been equal to those for bulk MOSFET. The decrease of device degradation with the increase of fingers could be explained by the large source/drain parasitic resistance and drain saturation voltage. It has been also found that the RF performance degradation could be explained by the decrease of $g_{m}$ and $C_{gd}$ and the increase of $g_{ds}$ after stress. The degradation of the DC and RF characteristics of RF-nMOSFET could be predicted by the measurement of the substrate current.t.

• Journal of information and communication convergence engineering
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• v.6 no.2
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• pp.154-157
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• 2008

A class-E RF(Radio Frequency) power amplifier for wireless application is designed using standard CMOS technology. To drive the class-E power amplifier, a class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. The reliability characteristic is improved when a finite-DC feed inductor is used instead of an RF choke with the load. After one year of operating, when the load is an RF choke the output current and voltage of the power amplifier decrease about 17% compared to initial values. But when the load is a finite DC-feed inductor the output current and voltage decrease 9.7%. The S-parameter such as input reflection coefficient(S11) and the forward transmission scattering parameter(S21) is simulated with the stress time. In a finite DC-feed inductor the characteristics of S-parameter are changed slightly compared to an RF-choke inductor. From the simulation results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to power amplifier using an RF choke.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.136-139
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• 2021

In this paper, we studied the charging characteristics of high-capacity supercapacitor with high current for RF wireless charging system for smart phone charging. The dc output of the RF-DC receiver is connected to supercapacitor after which is connected to DC-DC converter for charging a smart phone. This configuration stably supplies voltage and current for charging it. Studies show that the higher charging current use, the rapidly shorter the charging time of supercapacitor is. The currents of 2A, 10A and 27A were used for charging supercapacitors. The charging time was measured for 3000F, 6000F, 12000F supercapacitors which is parallelly connected with 3000F supercapacitors.

• Journal of IKEEE
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• v.22 no.2
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• pp.476-479
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• 2018

This paper proposes a method for reducing the amount of current consumption by the transceiver based remote control and the ZigBee RF4CE network layer step. We have studied how to improve power efficiency at short transition time through duty rate management. Also, comparing the measured current consumption before and after the improvement, we confirmed the correlation between the data transmission speed improvement and the current reduction.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2441-2446
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• 2018

This paper presents a radio frequency-to-direct current (RF-to-DC) converter for special RF power harvesting application at 915 MHz. The major featured components of the proposed RF-to-DC converter is the combination of a cross-coupled rectifier and an active diode: first, the cross-coupled rectifier boosts the input voltage to desired level, and an active diode blocks the reverse current, respectively. A prototype was implemented using $0.18{\mu}m$ CMOS technology, and the performance was proven from the fact that the targeted RF harvesting system's full-operation with higher power efficiency; even if the system's input power gets lower (e.g., from nominal 0 to min. -12 dBm), the proposed RF-to-DC converter constantly provides 1.47 V, which is exactly the voltage level to drive follow up system components like DC-to-DC converter and so on. And, maximum power conversion efficiency is 82 % calculated from the 0 dBm input power, 2.3 mA load current.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.29-33
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• 2021

A 5.8-GHz 1W wireless power transmission system was used for charging a smart phone. The voltage of one RF power receiver with antenna was not enough for charging. Several power receivers for charging a smart phone was connected serially. The voltage of several RF power receivers are highly enough for charging a smart phone within 50cm. However, the lack of current from small capacitances of RF-DC converters is not suitable for charging smart phone. It means very long charging time. In this paper, the voltage multiplier circuits for RF-DC converters were analyzed to increase the current and voltage at the same time to reduce the charging time in smartphone RF wireless charging. Through the analysis of multiplier circuits, the 7-stage parallel multiplier circuit with voltage-doubler units are suitable for charging the smartphone, which supplies 5V and 700mA at 3V@5.8GHz.