• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.25-34
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• 2002

In this paper, silicidation induced Schottky contact area was obtained using the current voltage(I-V) characteristics of shallow cobalt silicided p+-n and n+-p junctions. In reverse bias region, Poole-Frenkel barrier lowering influenced predominantly the reverse leakage current, masking thereby the effect of Schottky contact formation. However, Schottky contact was conclusively shown to be the root cause of the modified I-V behavior of n+-p junction in the forward bias region. The increase of leakage current in silicided n+-p diodes is consistent with the formation of Schottky contact via cobalt slicide penetrating into the p-substrate or near to the junction area and generating trap sites. The increase of reverse leakage current is proven to be attributed to the penetration of silicide into depletion region in case of the perimeter intensive n+-p junction. In case of the area intensive n+-p junction, the silicide penetrated near to the depletion region. There is no formation of Schottky contact in case of the p+-n junction where no increase in the leakage current is monitored. The Schottky contact amounting to less than 0.01% of the total junction was extracted by simultaneous characterization of forward and reverse characteristics of silicided n+-p diode.

• Journal of the Korea Safety Management & Science
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• v.11 no.4
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• pp.193-199
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• 2009

Recently, an industrial production-distribution planning problem has been widely investigated in Supply Chain Management(SCM). One of the key issues in the current SCM research area is reverse logistics network. This study have developed a simulation model for the reverse logistics network. The simulation model analysis reverse logistics network issues such as inventory policy, manufacturing policy, transportation mode, warehouse assignment, supplier assignment. Computational experiments using commercial simulation tool ARENA show that the real problems. The model can be used to decide an appropriate production-distribution planning problem in the research area.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.34 no.3
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• pp.57-70
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• 2011

To address global climate change, various governments are investing in electric vehicle research and, especially in Korea, the application of electric vehicles to public transportation. The lithium batteries used in electric vehicles typically have an expected life cycle of 2-5 years. If electric vehicles become commonly used, they will generate many discarded batteries that could be harmful to the environment. Additionally, lithium batteries are potentially explosive and should be handled appropriately. Thus, reverse logistics issues are involved in handling expired batteries efficiently and safely. Reverse logistics includes the collection, recycling, remanufacturing, and discarding of waste. This study developed a reverse logistics process for electric vehicle batteries after analyzing the as-is process for lead and lithium batteries. It also developed possible disposal regulations for electric vehicle batteries based on current laws regarding conventional batteries.

• Journal of Power Electronics
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• v.16 no.1
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• pp.57-65
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• 2016

Reverse matrix converters, which can step up voltages, are suitable for applications with source voltages that are lower than load voltages, such as generator systems. Reverse matrix converter topologies are advantageous because they do not require additional components to conventional matrix converters. In this paper, a detection method and a post-fault modulation strategy to operate a converter as close as possible to its desired normal operation under the open-switch fault condition in the rectifier stage are proposed. An open-switch fault in the rectifier stage of a reverse matrix converter causes current distortions and voltage ripples in the system. Therefore, fault-tolerant control for open-switch faults is required to improve the reliability of a system. The proposed strategy determines the appropriate switching stages from among the remaining healthy switches of the converter. This is done based on reference currents or voltages. The performance of the proposed strategy is experimentally verified.

• Proceedings of the KSR Conference
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• 2008.11b
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• pp.1188-1194
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• 2008

Derail accident of train and motorcar through signal override causes such a huge obstruction in train service. To minimize such derail accidents, number of bills were examined such as installing normal and reverse position indicator on the switch. A indicator was necessary which does not affect current equipments and not to be confused as traffic lights. Normal and reverse position indicator is installed in the middle of the rail in front of front rod of switch. It is to prevent derail accident while manual handling of obstacle by ease of verifying normal and reverse position by attendants or motorcar driver. Also, it is a device that prevents accidents by indicating normal and reverse position of switch during night service of motorcar. Such a prevention accomplished through thorough maintenancework of equipment, precise handling of operators and exterior factors are eliminated or perceived and treated well.

• Journal of Korean Society for Quality Management
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• v.39 no.3
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• pp.422-431
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• 2011

The number of mobile telecommunication service subscribers has been over 50 millions as of the end of Nov. 2010. And the number of used mobile phones has been growing continuously caused by shortened life cycle of products and competing between service providers, which is about 21 millions for only one year, 2010 in Korea. However, the quality level of reverse logistics network for used mobile phones is very low and statistics show that the collection ratio of them has not been over 40%. The current low collection ratio can be one of the significant causes of environment destruction due to the cumulated growth. Accordingly new practical alternative recovery systems are required in addition to the current one with EPR(Extended Producers Responsibility). In this paper, suggested are alternative policies to improve the quality level of reverse logistics network for used mobile phones effectively. ENR(Extended Network service providers Responsibility) is representative of them.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.05a
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• pp.405-408
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 5$0^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. Measurement electrical parameters are forward turn-on voltage, reverse breakdown voltage, barrier height, saturation current, ideality factor, dynamic resistance acceding to junction concentration of substrates and temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation current and ideality factor were increased by substrates concentration variations. Reverse breakdown voltage and dynamic resistance were increased by temperature variations.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.236-236
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• 2011

본 연구 축전 결합형 고주파 플라즈마(CCP) 식각장비에 펄스 직류(Pulse DC) 전원을 인가하여 오실로스코프(oscilloscope)를 분석하여 전기적 특성을 평가하는 것이다. 펄스 직류전원 플라즈마 시스템에서는 다양한 변수를 이해하여야 한다. 본 실험에서 사용한 공정 변수는 Pulsed DC Voltage 300~500 V, Pulsed DC reverse time $0.5{\sim}2.0{\mu}s$, Pulsed DC Frequency 100~250 kHz 이었다. 실험 결과를 정리하면 1) Pulsed DC Voltage 가 증가할수록 Input voltage의 최대값은 336~520 V, 최소값은 -544~-920 V로 변하여 피크 투 피크 (peak to peak)값은 880~1460 V로 증가였다. Input current 또한 최대값은 1.88~2.88 A, 최소값은 -0.84~-1.28 A로 변하여 피크 투피크 값은 2.88~4.24 A로 증가하였다. 이는 척에 인가되는 전류와 파워의 증가를 의미한다. 2) Pulsed DC reverse time이 증가하면 Input voltage와 Input current값이 증가했다 (Input voltage의 피크 투 피크 값은 1200~1440 V, Input current의 피크 투 피크 값은 3.56~4.56 A). 3) Pulsed DC frequency가 증가하면 주기가 짧아져 Input voltage와 Input current값이 증가 한다 (Input voltage의 피크 투 피크 값은 900~1320 V, Input current의 피크 투 피크 값은 2.36~3.64 A). 결론적으로 펄스 직류 플라즈마의 다양한 전기적 변수들은 반응기 내부에 인가되는 Input voltage와 Input current의 값에 큰 영향을 준다는 것을 알 수 있었다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.