• 한국진공학회지
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• 제5권2호
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• pp.156-160
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• 1996

The purity dependence of the Curie point and the critical exponent of heat capaicty has been studied by measuring the resistvity of nickel samples with several different purities. The resistivity was measured by the 4-point ac method with a lock-in amplifier. The Curie points determined from in-phase and out-of-phase signals were found to be consisten twith each other . We found that the Curie point and the critical exponent of heat capacity did not depend on the purity of samples.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1277-1282
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• 2004

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with 8${\times}$10$^{-3}$ $\Omega$-cm of resistivity and 80 % of transmittance at optimal conditions.

• 한국표면공학회지
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• 제29권6호
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• pp.803-808
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• 1996

Material and electrical characteristies of copper thin films prepared by metal organic chemical vapor deposition (MOCVD) have been investigated for interconnection applications in ultra large scale integration circuits (ULSI). The copper films have been deposited a TiN substrates using a metal organic precursor, hexafluoro acetylacetonate trimethyvinylsilane copper, VTMS(hfac)Cu (I). Deposition rate, grain size, surface morphology, and electrical resistvity of the copper films have been measuredfrom samples prepared at various experimental conditions, which include substrate temperature, chamber pressure, and carrier gas flow rate. Results of the experiment showed that the electrical property of the copper films is closely related to the crystallinity of the films. Lowest electrical resistivity, $2.4{\mu}{\Omega}.cm$ was obtained at the substrate temperature of $180^{\circ}C$, but the resistivity slightly increased with increasing substrate temperature due to the carbon content along the copper grain boundaries.

• 반도체디스플레이기술학회지
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• 제15권3호
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• pp.57-61
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• 2016

We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.176-179
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• 2003

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with $8{\times}10^{-3}\;{\Omega}-cm$ of resistivity and 80% of transmittance at optimal conditions.

• 한국재료학회지
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• 제3권6호
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• pp.661-667
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• 1993

Conatact barrier metal용 selective W CVD 기술에서 $SiH_4//WF_6$(=R)유량비가 W막의 비저항, contact resistance, 접합주설전류 등의 전기적 특성에 미치는 영향을 $\beta$-W 의 생성에 촛점을 맞추어 조사하였다. R의 증가에 따라 W의 비저항이 증가하는데, 그 주원인은 $\alpha$-W로 부터 $\beta$-W 로의 상변태에 있다. $SiH_{4}$환원에 의한 CVD W에서 생성되는 $\beta$-W 는 산소에 의해서가 아니라 막내에 유입된 Si에 의하여 안정화된다. Si기탄상에 W를 증착할 때에는 R값이 클 경우에 $\beta$-W 가 생성되지만, TiN 기판상에 W를 증착할 때에는 R값이 큰 경우에도 $\beta$-W 가 생성되지 않는 것으로 나타났다. 또한 R이 증가함에 따라 접합누설전류가 증가하는데, 이것은 W-Si계면에 대한 수직방향으로의 Si의 소모뿐만 아니라 수평방향으로의 Si의 소모에도 그 원인이 있는 것으로 보인다.

• 한국표면공학회지
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• 제40권3호
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• 한국자기학회지
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• 제7권5호
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• pp.243-248
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• 1997

Ar+ $O_{2}$ 혼합가스 중에서 반응성 스퍼터링을 통해 직접 Fe-Hf-O계 초미세결정 연자성 박막을 제조하였으며, 이때 산소분압비의 변화가 Fe-Hf-O 박막의 미세구조 및 자기적 특성에 미치는 영향을 조사하였다. 산소분압이 증가함에 따라 박막의 포화자속밀도는 점차적으로 감소하며 연자기특성이 10%까지는 향상되다가 다시 열화되는 경향을 나타내었다. 최적조건인 10%의 산소분압에서 증착한 F $e_{82}$H $f_{3.4}$ $O_{14.6}$ 초미세결정 박막은 열처리 없이 증착한 상태에서 우수한 연자기 특성을 나타내었으며, 이때의 자기적 특성은 각각 포화자속밀도 17.7 kG, 보자력 0.7 Oe 및 실효투자율 2,500(100 MHz)의 값을 나타내었다. 산소분압이 증가함에 따라 결정립 크기가 감소하며 15% 이상의 산소분압에서는 F $e_{3}$ $O_{4}$가 생성되었다. 따라서 10%에서 가장 우수한 연자기 특성을 나타내는 것은 결정립 크기와 산화물 생성에 의해 설명될 수 있다. Fe-Hf-O계 초미세결정 박막의 전기비저항은 산소분압이 증가함에 따라 증가하는 경향을 나타내었다. 우수한 연자기 특성을 나타내는 F $e_{82}$H $f_{3.4}$ $O_{14.6}$ 박막의 경우, 약 150 .mu. .ohm.cm로 산소를 첨가하지 않은 경우의 30 .mu. .ohm. cm에 비하여 약 5배 증가된 값을 나타내었다. 따라서 F $e_{82}$H $f_{3.4}$ $O_{14.6}$초미세결정 박막이 고주파에서 우수한 연자기 특성을 나타내는 원인은 주로 높은 전기비저항과 미세하게 형성된 결정립에 기이한 것으로 생각된다.