• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.98-101
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• 2018

In this paper, we discuss the fabrication of metal alloy resistors. We connected them in parallel to estimate their resistance and temperature coefficient of resistance (TCR). The fabricated resistors have different resistances, 5 and $10{\Omega}$ and different TCRs, 50 and $200ppm/^{\circ}C$. Each resistor was confirmed to have the correct atomic composition through the use of energy dispersive X-ray (EDX). The resistors' electrical properties were confirmed by measuring resistance and TCR. The resistance and TCR of the resistors connected in parallel were estimated through the increase in resistance due to the increase in temperature, and were compared with the measured values. We are confident that this TCR estimation technique, which uses the increase in resistance due to temperature, will be very useful in designing and fabricating resistors with low and stable TCR.

• 한국정밀공학회지
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• 제22권11호
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• pp.104-110
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• 2005

GIS(Gas Insulated Switchgear) is used in electric power system, to insure non conductivity, breaking capacity and operating reliability. The commercial dynamic analysis code COSMOS MOTION and 3-D modeling program SOLID WORKS were used to simulate dynamic analysis of the closing resistors of the GIS in this paper. To reduce chatter vibration of closing resistors, the motion of moving and fixed parts of closing resistors were simulated by varying the spring constant, the damping coefficient and the mass of moving and fixed parts. The simulated results were compared with experimental results. As a result, chatter vibration of closing resistors of the GIS could be reduced by using the results. These data can be used to determine the spring constant, the damping coefficient and mass of a moving part to reduce chatter vibration when the next model is developed.

• Journal of Mechanical Science and Technology
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• 제20권10호
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• pp.1607-1613
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• 2006

GIS (Gas Insulated Switchgear) is used in electric power system to insure non conductivity, breaking capacity and operating reliability. In the present study, dynamic analysis on the closing resistors of the GIS has bees carried out by the commercial dynamic analysis code COSMOS MOTION and 3-D modeling program SOLID WORKS. In order to find the minimum value of chatter vibration of closing resistors, the motion of moving and fixed resistor parts of closing resistors were simulated by varying the spring constant, the damping coefficient and the mass of moving and fixed resistor parts. The simulated results were compared with experimental results. The application of the results could reduce chatter vibration of closing resistors of the GIS. These data are also useful on the development of future model GIS with minimum chatter vibration for the determinations of the spring constant, the damping coefficient and mass of a moving part.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.311-312
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• 2005

Applying a designed test coupon pattern for fabricating resistors various resistors were formed using PTF(polymer thick film) pastes. Aspect ratio from 0.25 to 4 were selected for fabricating resistors. Formed resistors were cured at $170^{\circ}C$ and $240^{\circ}C$. Electrical properties of fabricated resistors were measured and their values analyzed in relation to cure temperature and formed geometry via printing. Also effects of substrates used for fabricating resistors were observed.

• 대한전자공학회논문지
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• 제24권5호
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• pp.813-817
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• 1987

High value sheet resistance (Rs' 1K-33K\ulcorner/) polysilicon resistors were fabricated using double ion implantation with boron as the major dopant and phosphorus compensation. It is observed that Rs sensitivity to the net doping concentration is decreased by one order of magnitude compared to the conventional (boron implanted)polysilicon resistors. The temperature co-efficient of resistance (TCR) measured between 25\ulcorner and 125\ulcorner shows equivalent values to those of non-compensated resistors for the same Rs. A qualitative electrical conductiion mechanism for compensated polysilicon resistor is proposed, based on the existing grain boundary charge trapping theory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.50-50
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• 2007

We report the effect of the film thickness on electrical properties of Ti(N) film resistors. The applications of titanium nitride thin film resistor in $\Pi$-type attenuators are also characterized. As film thickness decreases from 100 to 30 nm, temperature coefficient of resistance significantly decreases from -60 to -148 ppm/K, while sheet resistance increases from 37 to $270\;{\Omega}/{\square}$. The characterizations of 20dB-attenuators using thin film resistors are improved in comparison with those using thick film resistors. The $\Pi$-type attenuators using Ti(N) thin film resistors exhibit a attenuation of -19.94 dB and voltage standing wave ratio of 1.16 at a frequency of 2.7 GHz.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.253-258
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• 2005

This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.913-917
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

• 한국지반공학회논문집
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• 제40권2호
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• pp.115-123
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• 2024

응력은 비가시 물리량이므로, 지반 내부에서 이를 측정하기 위해서는 토압계가 필요하다. 기존의 스트레인 게이지 기반 토압계는 큰 강성을 가지며, 이는 지반 내부 응력을 교란시켜 토압 측정의 정확성에 영향을 준다. 박막형 압전센서는 얇고 유연하므로, 이를 활용할 경우 지반 내부 응력의 교란을 최소화하여 지중응력을 측정할 수 있다. 본 연구에서는 박막형 압전 센서를 활용하여 지반 내부의 응력을 측정하기 위한 시스템을 구축하였다. 박막형 압전 센서를 교정하기 위한 챔버를 제작하여 사질토 지반 내부에 매설된 박막형 압전 센서의 측정 변동성과 센서의 감지 영역에 부착된 퍽으로 인한 측정 토압의 재현성 향상을 반복실험을 통해 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.98-99
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• 2007

This study has successfully demonstrated the direct fabrication of polymer resistors using ink-jet printing technology as an alternative patterning to traditional photolithography. The polymer resistors were fabricated just by two layer processes using a ink-jet printer (DMP-2800, Fujifilm Dimatix). First, resistive materials was patterned by a ink-jet printing with the desired width and length. Next, resistor fabrication was completed by printing metal contact pads on the both sides of the polymer resistor. We used poly (3,4-ethylene dioxythiophene) poly(styrenesulfonate)(PEDOT:PSS) for the resistor material and a nano-sized silver colloid for the metal contact pads. We characterized the electrical properties of PEDOT:PSS by measuring sheet resistance and specific resistance on a glass substrate. From analysis of the measured resistances, the electrical resistances of the polymer resistors linearly increased as a function of printed width and length of resistors. The accuracy of the fabricated polymer resistor showed about $0.6{\sim}2.5%$ error for the same dimensions.