• Title/Summary/Keyword: Resistors

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Behavior of the Temperature Coefficient of Resistance at Parallelly Connected Resistors (병렬로 접속된 저항체에서 저항온도계수의 거동)

  • Lee, Sunwoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.2
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    • pp.98-101
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    • 2018
  • In this paper, we discuss the fabrication of metal alloy resistors. We connected them in parallel to estimate their resistance and temperature coefficient of resistance (TCR). The fabricated resistors have different resistances, 5 and $10{\Omega}$ and different TCRs, 50 and $200ppm/^{\circ}C$. Each resistor was confirmed to have the correct atomic composition through the use of energy dispersive X-ray (EDX). The resistors' electrical properties were confirmed by measuring resistance and TCR. The resistance and TCR of the resistors connected in parallel were estimated through the increase in resistance due to the increase in temperature, and were compared with the measured values. We are confident that this TCR estimation technique, which uses the increase in resistance due to temperature, will be very useful in designing and fabricating resistors with low and stable TCR.

Dynamic Characteristics Analysis of Closing Resistors of Gas Insulated Switchgear (가스절연 개폐장치 투입저항의 동특성 해석)

  • Cho Hae-Yong;Lee Sung-Ho;Lim Sung-Sam;Lee Ki-Joung;Kim Min-Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.11 s.176
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    • pp.104-110
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    • 2005
  • GIS(Gas Insulated Switchgear) is used in electric power system, to insure non conductivity, breaking capacity and operating reliability. The commercial dynamic analysis code COSMOS MOTION and 3-D modeling program SOLID WORKS were used to simulate dynamic analysis of the closing resistors of the GIS in this paper. To reduce chatter vibration of closing resistors, the motion of moving and fixed parts of closing resistors were simulated by varying the spring constant, the damping coefficient and the mass of moving and fixed parts. The simulated results were compared with experimental results. As a result, chatter vibration of closing resistors of the GIS could be reduced by using the results. These data can be used to determine the spring constant, the damping coefficient and mass of a moving part to reduce chatter vibration when the next model is developed.

Dynamic Analysis on the Closing Resistors of Gas Insulated Switchgear

  • Cho Hae-Yong;Lee Sung-Ho;Lim Sung-Sam
    • Journal of Mechanical Science and Technology
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    • v.20 no.10
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    • pp.1607-1613
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    • 2006
  • GIS (Gas Insulated Switchgear) is used in electric power system to insure non conductivity, breaking capacity and operating reliability. In the present study, dynamic analysis on the closing resistors of the GIS has bees carried out by the commercial dynamic analysis code COSMOS MOTION and 3-D modeling program SOLID WORKS. In order to find the minimum value of chatter vibration of closing resistors, the motion of moving and fixed resistor parts of closing resistors were simulated by varying the spring constant, the damping coefficient and the mass of moving and fixed resistor parts. The simulated results were compared with experimental results. The application of the results could reduce chatter vibration of closing resistors of the GIS. These data are also useful on the development of future model GIS with minimum chatter vibration for the determinations of the spring constant, the damping coefficient and mass of a moving part.

Study on variation of electrical properties of polymer thick film resistor regarding curing temperature, printing process and substrate (경화 온도와 인쇄 공정 및 기판에 따른 폴리머 후막 저항체의 특성 변화에 대한 연구)

  • Yoo, Myong-Jae;Lee, Sang-Myong;Park, Seong-Dae;Lee, Woo-Sung;Kang, Nam-Kee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.311-312
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    • 2005
  • Applying a designed test coupon pattern for fabricating resistors various resistors were formed using PTF(polymer thick film) pastes. Aspect ratio from 0.25 to 4 were selected for fabricating resistors. Formed resistors were cured at $170^{\circ}C$ and $240^{\circ}C$. Electrical properties of fabricated resistors were measured and their values analyzed in relation to cure temperature and formed geometry via printing. Also effects of substrates used for fabricating resistors were observed.

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Fabrication and polysilicon Resistors Compensated with Boron and Phosphorous Ion-Implantation (Boron과 Phosphorous 이온주입에 의한 다결정 실리콘 저항의 제조)

  • 김지범;최민성
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.5
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    • pp.813-817
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    • 1987
  • High value sheet resistance (Rs' 1K-33K\ulcorner/) polysilicon resistors were fabricated using double ion implantation with boron as the major dopant and phosphorus compensation. It is observed that Rs sensitivity to the net doping concentration is decreased by one order of magnitude compared to the conventional (boron implanted)polysilicon resistors. The temperature co-efficient of resistance (TCR) measured between 25\ulcorner and 125\ulcorner shows equivalent values to those of non-compensated resistors for the same Rs. A qualitative electrical conductiion mechanism for compensated polysilicon resistor is proposed, based on the existing grain boundary charge trapping theory.

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Characteristics of $\pi$-type attenuators using Ti(N) thin film resistors

  • Cuong, Nguyen Duy;Kim, Dong-Jin;Kang, Byoung-Don;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.50-50
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    • 2007
  • We report the effect of the film thickness on electrical properties of Ti(N) film resistors. The applications of titanium nitride thin film resistor in $\Pi$-type attenuators are also characterized. As film thickness decreases from 100 to 30 nm, temperature coefficient of resistance significantly decreases from -60 to -148 ppm/K, while sheet resistance increases from 37 to $270\;{\Omega}/{\square}$. The characterizations of 20dB-attenuators using thin film resistors are improved in comparison with those using thick film resistors. The $\Pi$-type attenuators using Ti(N) thin film resistors exhibit a attenuation of -19.94 dB and voltage standing wave ratio of 1.16 at a frequency of 2.7 GHz.

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Characteristics of CrOx Thin-films for High Precision Resistors (고정밀저항용 크롬산화박막의 특성)

  • Seo, Jeong-Hwan;Noh, Sang-Soo;Lee, Eung-Ahn;Kim, Kwang-ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.3
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    • pp.253-258
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    • 2005
  • This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.

Effect of RF Sputtering Conditions on Properties of Thin Film Resistor for Microwave Device (초고주파용 박막저항의 특성에 미치는 RF 스파터링 조건의 영향)

  • Ryu, Sung-Rok;Koo, Bon-Keup;Kang, Beong-Don;Ryu, Jei-Chun;Kim, Dong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.913-917
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    • 2003
  • In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

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Methodology to Measure Stress Within Sand Ground Using Force Sensing Resistors (박막형 압전 센서를 활용한 사질토 지반 지중 응력 측정 방법론)

  • Kim, Dong Kyun;Woo, Sang Inn
    • Journal of the Korean Geotechnical Society
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    • v.40 no.2
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    • pp.115-123
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    • 2024
  • Stress is an invisible physical quantity, necessitating the use of earth pressure cells for its measurement within theground. Traditional strain-gauge type earth pressure cells, due to their rigidity, can distribute stress within the ground and subsequently affect the accuracy of earth pressure measurements. In contrast, force sensing resistors are thin and flexible, enabling the minimization of stress disturbance when measuring stress within the ground. This study developed a system that utilizes force sensing resistors to measure ground stress. It involved constructing a soil chamber for calibrating the force sensing resistors, assessing the variability of measurements from resistors embedded in sand ground, and verifying the attachment of pucks to the sensing area of the resistors.

Fabrication of Conductive Polymer Resistors Using Ink-jet Printing Technology (잉크젯 프린팅 기술을 이용한 전도성 폴리머 저항의 제작)

  • Lee, Sang-Ho;Kim, Myong-Ki;Shin, Kwon-Yong;Kang, Kyung-Tae;Park, Moon-Soo;Hwang, Jun-Young;Kang, Heui-Seok
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.98-99
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    • 2007
  • This study has successfully demonstrated the direct fabrication of polymer resistors using ink-jet printing technology as an alternative patterning to traditional photolithography. The polymer resistors were fabricated just by two layer processes using a ink-jet printer (DMP-2800, Fujifilm Dimatix). First, resistive materials was patterned by a ink-jet printing with the desired width and length. Next, resistor fabrication was completed by printing metal contact pads on the both sides of the polymer resistor. We used poly (3,4-ethylene dioxythiophene) poly(styrenesulfonate)(PEDOT:PSS) for the resistor material and a nano-sized silver colloid for the metal contact pads. We characterized the electrical properties of PEDOT:PSS by measuring sheet resistance and specific resistance on a glass substrate. From analysis of the measured resistances, the electrical resistances of the polymer resistors linearly increased as a function of printed width and length of resistors. The accuracy of the fabricated polymer resistor showed about $0.6{\sim}2.5%$ error for the same dimensions.

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