• Title/Summary/Keyword: Resistor network model

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LED Design using Resistor Network Model (저항 네트워크 모델을 통한 LED 설계)

  • Gong, Myeong-Kook;Kim, Do-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.73-78
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    • 2008
  • A resistor network model for the horizontal AlInGaN LED was investigated, The parameters of the proposed model are extracted from the test dies and $350{\mu}m$ LED, The center of the P-area is the optimal position of a P-electrode by the simulation using the model. Also the optimal chip size of the LED for the new target current was investigated, Comparing the simulation and fabrication result, the errors for the forward voltage and the light power are average 0,02 V, 8 % respectively, So the proposed resistor network model with the linear forward voltage approximation and the exponential light power model are useful in the simulation for the horizontal AlInGaN LED.

A Study on LED Electrode Optimal Disposition by Resistor Network Model (저항 네트워크 모델을 통한 LED 전극의 최적화 배치에 대한 연구)

  • Gong, Myeong-Kook;Kim, Do-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.457-458
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    • 2007
  • We investigated a resistor network model for the horizontal AlInGaN LED. Adding the proposed current density dependent relative quantum efficiency, the power simulation can be also obtained. Comparing the simulation and the measurement results for the LED with the size of $350{\mu}m$, the model is reasonable to simulate the forward voltage and the light output power. Using this model we investigated the optimization of the position and the number of the finger electrodes in a given chip area. It shows that the center disposition of the p-finger electrode in p-area is optimal for the voltage and best for the power. And the minimum number of the n-finger electrodes is best for the power.

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Simplified Resistor Network Calculation for Electrical and Mass Transport in Anode-Supported Planar Solid Oxide Fuel Cell (연료극지지 평판형 고체산화물 연료전지 내에서의 전기 및 물질전달에 대한 간략화된 저항 네트워크 계산)

  • Lee, Hyun-Jae;Nam, Jin-Hyun;Kim, Charn-Jung
    • Proceedings of the KSME Conference
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    • 2004.11a
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    • pp.1740-1745
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    • 2004
  • A simplified resistor network model for electrical and mass transport in anode-supported planar solid oxide fuel cell (SOFC) was constructed in order to investigate the effect of interconnect rib geometry on the cell performance. For accurate potential calculation, activation and concentration over-potentials at the electrode/electrolyte interfaces were fully considered in this calculation. When contact resistance was not considered, the optimum interconnect rib length were calculated to be $0.1{\sim}0.2$ mm for 2 mm half unit cell for given operation conditions and properties. However, with realistic contact resistance, the interconnect rib length should be increased to provide larger contact area and thus to obtain better performance.

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Modelling of the Electrochemical Performance of Functionally Graded Fuel Cell Electrodes by Discrete Simulations

  • Schneider, L.C.R.;Martin, C.L.;Bultel, Y.;Kapelski, G.;Bouvard, D.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.916-917
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    • 2006
  • Solid Oxide Fuel Cell technology uses powder processes to produce electrodes with residual porosity by partially sintering a mixture of electronically and ionically conducting particles. We model porous fuel cell electrodes with 3D packings of monosized spherical particles. These packings are created by numerical sintering. Each particle-particle contact is characteristic for an ionic, electronic or electrochemical resistance. The numerical packing is then discretized into a resistor network which is solved by using Kirchhoff's current law to evaluate the electrode's electrochemical performance. We investigate in particular percolation effects in functionally graded electrodes as compared to other types of electrodes.

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Single-Electron Devices for Hopfield Neural Network (홉필드 신경회로망을 위한 단일전자 소자)

  • Yu, Yun-Seop
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.6
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    • pp.16-21
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    • 2008
  • This paper introduces a new type of Hopfield neural network using newly developed single-electron devices. In the electrical model of the Hopfield neural network, a single-electron synapse, used as a voltage(or current)-variable resistor, and two stages of single-electron inverters, used as a nonlinear activation function, are simulated with a single-electron circuit simulator using Monte-Carlo method to verily their operation.

Modelling a Stand-Alone Inverter and Comparing the Power Quality of the National Grid with Off-Grid System

  • Algaddafi, Ali;Brown, Neil;Rupert, Gammon;Al-Shahrani, Jubran
    • IEIE Transactions on Smart Processing and Computing
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    • v.5 no.1
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    • pp.35-42
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    • 2016
  • Developments in power electronics have enabled the widespread application of Pulse Width Modulation (PWM) inverters, notably for connecting renewable systems to the grid. This study demonstrates that a high-quality power can be achieved using a stand-alone inverter, whereby the comparison between the power quality of the stand-alone inverter with battery storage (off-grid) and the power quality of the utility network is presented. Multi-loop control techniques for a single phase stand-alone inverter are used. A capacitor current control is used to give active damping and enhance the transient and steady state inverter performance. A capacitor current control is cheaper than the inductor current control, where a small current sensing resistor is used. The output voltage control is used to improve the system performance and also control the output voltage. The inner control loop uses a proportional gain current controller and the outer loop is implemented using internal model control proportional-integral-derivative to ensure stability. The optimal controls are achieved by using the Sisotool tool in MATLAB/Simulink. The outcome of the control scheme of the numerical model of the stand-alone inverter has a smooth and good dynamic performance, but also a strong robustness to load variations. The numerical model of the stand-alone inverter and its power quality are presented, and the power quality is shown to meet the IEEE 519-2014. Furthermore, the power quality of the off-grid system is measured experimentally and compared with the grid power, showing power quality of off-grid system to be better than that of the utility network.

Impedance Spectroscopy Models for X5R Multilayer Ceramic Capacitors

  • Lee, Jong-Sook;Shin, Eui-Chol;Shin, Dong-Kyu;Kim, Yong;Ahn, Pyung-An;Seo, Hyun-Ho;Jo, Jung-Mo;Kim, Jee-Hoon;Kim, Gye-Rok;Kim, Young-Hun;Park, Ji-Young;Kim, Chang-Hoon;Hong, Jeong-Oh;Hur, Kang-Heon
    • Journal of the Korean Ceramic Society
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    • v.49 no.5
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    • pp.475-483
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    • 2012
  • High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.