• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.4
• /
• pp.208-211
• /
• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.19-22
• /
• 2004

A 30-inch WQXGA+ TFT-LCD Monitor has been developed based on in-plane switching mode with multi-domain. This product adopts Cu electrode which, in spite of low resistivity, was not applied to TFT LCD products because of productivity and reliability problems etc. This low resistivity material makes it possible to clear the problem caused by line delay in such high resolution TFT-LCDs. As a results of successful adoption of innovative materials and technologies, our world's largest TFT-LCD Monitor has best performance for high information display.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.181-182
• /
• 2011

Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.656-659
• /
• 2001

We investigated the residual DC in the in-plane switching (IPS)-liquid crystal display(LCD) by voltage-transmittance (V-T) hysteresis method. Several IPS-LCD which have different concentrations of cynao LCs and different resistivities of fluorine LCs were fabricated. We found that the residual DC voltage of the IPS-LCD was decreasing with increasing concentration of cyano LCs and increasing with decreasing specific resistivity of fluorine LC materials. The residual DC voltage property can be improved by low molecular weight and high polarity of cyano LC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.2
• /
• pp.169-172
• /
• 2002

The voltage holding ratio(VHR) and the residual DC property in the in-plane switching (IPS) cells on a polyimide surface was studied. Several IPS cells which have different concentrations of cyano liquid crystals (LCs) were fabricated. We found that the VHR of the IPS cell was decreased with increasing concentration of cyano LCs. Also, the VHR of the IPS cell was increased with increasing specific resistivity of fluorine LCs. The residual DC voltage of the IPS cell by capacitance-voltage (C-V) hysteresis method was decreased with increasing concentration of cyano LCs. The residual DC property of the IPS cell on the rubbed PI surface can be improved by high polarity of cyano LC.

• Macromolecular Research
• /
• v.12 no.1
• /
• pp.53-62
• /
• 2004

We have prepared polymer composites of low-density polyethylene (LDPE) and ionomers (Surlyn 8940) containing polar segments and metal ions by melt blending with carbon black (CB) as a conductive filler. The resistivity and positive temperature coefficient (PTC) of the ionomer/LDPE/CB composites were investigated with respect to the CB content. The ionomer content has an effect on the resistivity and percolation threshold of the polymer composites; the percolation curve exhibits a plateau at low CB content. The PTC intensity of the crosslinked ionomer/LDPE/CB composite decreased slightly at low ionomer content, and increased significantly above a critical concentration of the ionomer. Irradiation-induced crosslinking could increase the PTC intensity and decrease the NTC effect of the polymer composites. The minimum switching current (Ι$\sub$trip/) of the polymer composites decreased with temperature; the ratio of Ι$\sub$trip/ for the ionomer/LDPE/CB composite decreased to a greater extent than that of the LDPE/CB composite. The average temperature coefficient of resistance (${\alpha}$$\sub$T/) for the polymer composites increased in the low-temperature region.

• Journal of the Korean Chemical Society
• /
• v.61 no.2
• /
• pp.57-64
• /
• 2017

Monoclinic $VO_2(M)$ nanoparticles codoped with 1.5 at. % W and 2.9 at. % Mg were synthesized by the hydrothermal treatment and post-thermal transformation method of $V_2O_5-H_2C_2O_4-H_2O$ with $Na_2WO_4$ and $Mg(NO_3)_2$. The composite thin film of the W/Mg-codoped $VO_2(M)$ with a commercial acrylic block copolymer was also prepared on PET substrate by wet-coating method. The reversible phase transition characteristics of the codoped $VO_2(M)$ nanoparticles and the composite film were investigated from DSC, resistivity and Vis-NIR transmittance measurements compared with the undoped and Wdoped $VO_2(M)$ samples. Mg-codoping into W-doped $VO_2(M)$ nanoparticles synergistically enhanced the transition characteristics by increasing the sharpness of transition while the transition temperature ($T_c$) lowered by W-doping was maintained. The codoped composite film showed the prominently enhanced NIR switching efficiency compared to only W-doped $VO_2(M)$ film with a lowered $T_c$.

• Journal of Sensor Science and Technology
• /
• v.9 no.1
• /
• pp.76-82
• /
• 2000

PTC thermistors with multilayer structure were fabricated by internal electrode bonding technique in order to realize low resistance. MLPTC (Multilayer Positive Temperature Coefficient) possess various features, such as small size, low resistivity and large current. We describe the effect of additives on the PTC characteristics, voltage - current characteristics, temperature dependence of resistance and complex impedance spectra as a function of frequency range 100 Hz to 13MHz to determine grain boundary resistance. It was found that MLPTC thermistor has both highly nonlinear effects of temperature dependent resistance and voltage dependent current behaviors, which act as passive element with self-repair mechanisms. Decrease of room temperature resistance with increasing the number of layers was demonstrated to be a grain boundary effect. Switching characteristics of current were caused by heat capacity of PTC thermistor with multilayer structure. Switching times are lengthened by increasing the number of layers.

• Journal of Biomedical Engineering Research
• /
• v.25 no.4
• /
• pp.269-275
• /
• 2004

Different biological tissues have different values of electrical resistivity. In EIT (electrical impedance tomography), we try to provide cross-sectional images of a resistivity distribution inside an electrically conducting subject such as the human body mainly for functional imaging. However, it is well known that the image reconstruction problem in EIT is ill-posed and the quality of a reconstructed image highly depends on the measurement error. This requires us to develop a high-performance EIT system. In this paper, we describe the development of a 16-channel digital EIT system including a single constant current source, 16 voltmeters, main controller, and PC. The system was designed and implemented using the FPGA-based digital technology. The current source injects 50KHz sinusoidal current with the THD (total harmonic distortion) of 0.0029% and amplitude stability of 0.022%. The single current source and switching circuit reduce the measurement error associated with imperfect matching of multiple current sources at the expense of a reduced data acquisition time. The digital voltmeter measuring the induced boundary voltage consists of a differential amplifier, ADC, and FPGA (field programmable gate array). The digital phase-sensitive demodulation technique was implemented in the voltmeter to maximize the SNR (signal-to-noise ratio). Experimental results of 16-channel digital voltmeters showed the SNR of 90dB. We used the developed EIT system to reconstruct resistivity images of a saline phantom containing banana objects. Based on the results, we suggest future improvements for a 64-channel muff-frequency EIT system for three-dimensional dynamic imaging of bio-impedance distributions inside the human body.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.36 no.7
• /
• pp.462-469
• /
• 1987

A metal gate MOSFET with source/drain regions self-aligned to gate region is proposed. The proposed MOS transistor is fabricated by utilizing the higher oxidation rate of source/drain regions with high doping concentration when compared with channel region with moderate doping. The thick oxide on the source/drain regions reduces the gate and drain(source) overlap capacitance down to that of a self-aligned polysilicon gate device while allowing the use of a metal gate with much lower resistivity than the more commonly used polycrystalline silicon. A ring oscillator composed of 15 inverter stages has been computer simulated using SPICE. The results of the simulation show good agreement with experimental measurement confirming the fast switching speed of propesed MOSFET.