• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.338-341
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• 2006

This paper presents the leakage current characteristics of ZnO varistors exposed to the $8/20{\mu}s$ lightning impulse currents as functions of the number of injection and amplitude of impulse currents. The surge simulator system ECAT that can generate $8/20{\mu}s$ impulse currents with a peak short-circuit of $5[kA_p]$ was used. Leakage currents flowing through ZnO varistors subjected to the $8/20{\mu}s$ impulse currents were measured under 60 Hz AC voltages. The trend curves of resistive leakage current of ZnO varistors were analytically calculated.

• Proceedings of the KIEE Conference
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• 2006.04b
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• pp.200-202
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• 2006

We investigated the operating characteristics of a flux-lock type superconducting fault current limiters according to the number of the serial connection each the superconducting element at the additive polarity winding of a transformer. This SFCL consists of two coils wound in parallel on the same iron core, and the secondary coil is connected to the elements in series. Operating characteristics can be controlled by adjusting the inductances and the winding directions of the coils. It turns ratio between the primary and the secondary coils is 63:21. The analysis of voltage, current, and resistance in serial connection each element was performed to increase the applied voltage of flux-lock type SFCL. When the applied voltage was 200/$\sqrt{3}[V_{rms}]$ with three elements connected in seres, the peak value of the line current increased up to 26,24[A]. On the other hands, resistive SFCL increased up to 36.35[A], under the same conditions. This enabled the flux-lock type SFCL to be easy to increase the capacity of power system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.188-189
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• 2006

The flux-lock type superconducting fault current limiter (SFCL) has the attractive characteristics that can adjust the current limiting level by the turns ratio and the winding direction of two coils. To apply this type SFCL into power system, the analysis for the recovery characteristics of it together with the current limiting characteristic is needed. In this paper, the experiments of the current limiting and the recovery characteristics of the flux-lock type SFCL with YBCO thin film were performed. The recovery characteristics of the flux-lock type SFCL dependent on the winding direction of two coils were analyzed through the comparison with the resistive type SFCL.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.55 no.2
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• pp.62-66
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• 2006

We investigated the characteristics of the hybrid-type superconducting fault current limiter (SFCL) by the number of secondary windings. The SFCL consists of a transformer, which has a primary winding and several secondary windings with serially connected $YB_{a2}Cu_{3}O_{7}$ films. In order to increase the capacity. of the SFCL, the serial connection between each current limiting unit is necessary. Resistive-type SFCL has a difficulty in quenching simultaneously between the units due to slight differences of their critical current densities. The hybrid-type SFCL could achieve the simultaneous quenching through the electrical isolation and the mutual flux linkage among the units. We confirmed that the capacity of the SFCL could be increased effectively through the simultaneous quenching among the units. In addition, the power burden of the system could be reduced by adjusting the number of secondary windings. We will investigate the method to increase the capacity through serial and Parallel connections among current limiting units.

• Proceedings of the KIEE Conference
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• 2002.07a
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• pp.336-338
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• 2002

We improved quench properties of a superconducting fault current limiter (SFCL) based on YBCO thin films by their serial and parallel combinations. The SFCL consisted of 6 switching elements fabricated of 4 inch-diameter YBCO thin films. Simple serial connection resulted in imbalanced power dissipation between switching elements even at the quench current difference of 0.6A. On the other hand, $2{\times}2\;and\;3{\times}2$ stack combinations produced simultaneous quenches. The $3{\times}2$ stack combination showed better simultaneous quench behavior than the $2{\times}2$ stacks. This is suggested to be because the currents between switching elements in parallel connection of the $3{\times}2$ stacks were more effectively redistributed than the $2{\times}2$ stacks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.157-158
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• 2005

Superconducting fault currents(SFCLs) are expected to improve not only reliability but also stability of real power systems. The analysis on the single line-to-ground fault of the integrated three phase flux-lock type SFCL, which consists of three flux-lock reactor wound on an iron core in each single phase and three YBCO thin films, was investigated in current limiting operation characteristics. We compared 21turn numbers with 42turn numbers according to wound turn numbers each the coil 2 under the additive polarity winding operation between coil 1 and coil 2. The three phase flux-lock type SFCL using an iron core differently operates general three phase resistive SFCLs. When a single line-to-ground fault occurred, the SFCL's three units were quenched after fault onset. We confirmed effective current limiting operation characteristics with adjustable inductance level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.146-148
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• 2006

The quench characteristics of flux-lock type high-Tc superconducting fault current limiters(SFCL) was investigated, $YBa_2Cu_3O_{7-x}$(YBCO) thin film was used as the current limiting elements of the flux-lock type SFCL. The quench characteristics of current limiting elements consisting of the flux-lock type SFCL was more improved than that of the resistive type SFCL.

• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.27-33
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• 2011

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${\mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${\pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{\times}0.9$ mm.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.131-137
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• 2005

This paper describes a new approach to the algorithm and fundamental characteristics of the device for monitoring the leakage currents flowing through zinc oxide (ZnO) surge arresters. In order to obtain a technique for a new on-line monitoring device that can be used in the deterioration diagnosis of ZnO surge arresters, the new algorithm and on-line leakage current detection device for extracting the resistive and capacitive currents using the phase shift addition method were proposed. The computer-based on-line monitoring device can sense accurately the power frequency leakage currents flowing through ZnO surge arresters. The on-line leakage current monitoring device of ZnO surge arresters proposed in this work has the high sensitivity compared to the third harmonic leakage current detection devices. As a consequence, it was found that the proposed leakage current monitoring device would be useful for forecasting the defects and degradation of ZnO surge arresters.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.315-318
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• 1999

We have proposed and fabricated the new bottom-gated polycrystalline silicon (poly-Si) thin film transistor (TFT) with a partial amorphous-Si region by employing the selective laser annealing. The channel layer of the proposed TFTs is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si layer. Our experimental results show that the ON/OFF current ratio is increased significantly by more than three orders in the new poly-Si TFT compared with conventional poly-Si TFT. The leakage current is decreased significantly due to the highly resistive a-Si re TFTs while the ON-series resistance of the local a-Si is reduced significantly due to the considerable inducement of electron carriers by the positive gate bias, so that the ON-current is not decreased much.