• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.478-478
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• 2013

Resistance-change Random Access Memory (ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics.

• Journal of IKEEE
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• v.17 no.3
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• pp.365-370
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• 2013

Power MOSFET is developed in power savings, high efficiency, small size, high reliability, fast switching, and low noise. Power MOSFET can be used in high-speed switching transistors devices. Recently attention given to the motor and the application of various technologies. Power MOSFET is a voltage-driven approach switching device and designed to handle on large power, power supplies, converters, motor controllers. In this paper, the 400 V Planar type, and the trench type for realization of low on-resistance are designed. Trench Gate Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1050-1060
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• 1994

This paper is a study on the computer simulation of the characteristics of the superconducting fault current limiter. Input variable parameters are apparent power, load resistance value, line resistance value and so on. Initial fault current 2 times larger than the trigger current is required to reduce the switching time of SFCL. The propagation velocity increases abruptly, the transport current is several times larger than the ciritical current. In this paper, the switching time is calculated to be 323$\mu$ sec, and the initial fault current is 19 times larger than the critical current. Because the trigger coils are bifilar winding, they have little impedance in superconducting state. After fault occurred, the limiting coil acts as a superconducting reactor and the trigger coils quench at a critical current. Without the SFCL in the circuit, fault current after the load impedence is shorted might be increased to 1100A. The fault current is, therefore, successfully limited by the superconducting limiting coil to 100A determined by the coil inductance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.190-193
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• 2013

Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.266-269
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• 2000

This paper presents a novel single-stage unity power factor converter which features the reduced switching losses by zero-voltage switching and zero-current switching (ZVZCS). Hence the turn-on and turn-off losses of switches are sufficiently reduced. And the reduced conduction losses are achieved by the elimination of one leg of front-end rectifier. And low on-resistance MOSFETs (Synchronous Rectifier) are used in the rectifier at the secondary side of high frequency transformer instead of diodes. Theoretical analysis simulated results of a AC to DC 150W(5V, 30A) converter are presented.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.1860-1862
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• 1998

This Paper presents a novel resonant switching Watkins-Johnson DC-DC converters. In the proposed converters, the basic steady-state analysis of the have been presented for the ZVS type Watkins-Johnson converter. From the results, it is shown that the output voltage of the converter is independant of load resistance, and is determined only by the switching frequency. Consequently, a design procedure is presented that minimizes voltage stress to the switch while maintaining ZVS for all loads.

• Journal of the Korean Society of Safety
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• v.8 no.4
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• pp.95-100
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• 1993

In power transistor switching circuit have shunt snubber(dv/dt limiting capacitor) and series snubber (di/dt limiting inductor). The shunt snubber is used to reduce the turn-off switching loss and the series snubber is used to reduce the turn-on switching loss. Design procedures are derived for selecting the capacitance, inductor and resistance to limit the peak voltage and current values. The action of snubber is analyzed and applied to the design for safety PWM inverter.

• Journal of Power Electronics
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• v.17 no.3
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• pp.601-609
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• 2017

Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.

• Journal of Magnetics
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• v.6 no.4
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• pp.132-141
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• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.