• Journal of Power Electronics
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• v.10 no.6
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• pp.749-761
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• 2010

The switching frequency of a power device is a very important parameter in the design of a parallel active power filter (PAPF), but so far, very little discussion has been conducted on it in a quantitative manner in previous publications. In this paper, an extensive analysis on the effects of the switching frequency on the performance of a PAPF is made, and a specification of the switching frequency values with different compensation results is presented. A first-order inertia element and a second-order oscillation element are considered as approximate models of a PAPF, respectively. The compensation characteristic for each order of harmonic current is obtained at different switching frequencies. Then, the THDs of each model for the system loads of a rectifier with resistance and inductance loads are proposed. The compensation results of a PAPF controlled as a first-order inertia element are better than those of a PAPF controlled as a second-order oscillation element. With two types of system loads which are rectifier with resistance and inductance loads and rectifier with resistance, inductance and capacitance loads, the THDs of the source current after compensation are presented with different switching frequencies. The compensation characteristics for the most widely used digital control system are investigated. The situation with an analog control is the theoretical characteristic and it is the best situation. The compensation characteristic of the digital control is worse than the compensation characteristic of the theoretical characteristic. Based on these analyses, the specifications of compensation characteristics with different switching frequencies are quite straightforward. Finally, a practical design example is studied to verify the application.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.367-370
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• 2004

We fabricated PLT(5) thin film on $Pt/TiO_x/SiO_2/Si$ substrate by using sol-gel method and investigated leakage current, switching and retention properties. The leakage current density of PLT(5) thin film was $3.56{\times}10^{-7}A/cm^2$ at 4V. In the examination of switching properties, pulse voltage and load resistance were $2V{\~}5V$ and $50{\Omega}{\~}3.3k{\Omega}$, respectively. Switching time had a tendency to decrease from 520ns to 140ns with the increase of pulse voltage, and also the time was increased from 140ns to $13.7{\mu}s$ with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time was about 143kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching was about $10\%$. Also, polarization in retention was decreased as much as about $8\%$ after $10^5$s.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.40-41
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• 2016

The inverter resistance welder requires AC/DC converter of high efficiency because the converter changes a commercial ac power source to low voltage dc power source. Harmonic components that occur in the conversion process of converter decrease system power factor and deal great damage in electric power system. To improve such problems, this paper proposes a high efficiency AC/DC converter for inverter resistance welder. The switching devices in the proposed converter are operated by soft switching technique using a new quasi-resonant circuit. As a result, the proposed AC/DC converter obtains low switching power loss and high efficiency.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.182-186
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• 2012

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.2
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• pp.7-15
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• 1973

The operation behaviors of negative-resistance multivibrators. are described. The oscillation phenomena in monostable and bistable mode negative-resistance circuits are analyzed by using a analog computer. It is presented that voltage-controlled negative -resistance switching circuits may be in oscillation state for a time or parmanently by adding the bias voltage or trigger pulse. The results show that the care must be taken for this fact in the constructions of negative resistance switching circuits.

• The Journal of Information Systems
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• v.28 no.3
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• pp.123-139
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• 2019

Purpose With the development of information and communication technologies. fintech industry is rapidly growing as a major financial service. Previous research literatures mainly focused on overall characteristics and technical aspects of fintech including security issues. Therefore, this study investigated the effect of individual features influencing the resistance of adopting a fintech service. Moreover, this paper included the guidelines in practical development of fintech mechanism. Design/methodology/approach For research purposes, this study developed research hypotheses in order to empirically examine the effect of the factors that might have a significant effect on the resistance of the wearable device. The empirical research was based on a survey which carried through 359 participants. Research hypotheses were evaluated via SPSS Statistics 21.0 and AMOS 19 statistical package program. Findings Results showed that self-efficacy and individual innovation had a significant effect on the technostress and switching cost. In addition, technostress, security and switching cost had a significant effect on the resistance of adopting a fintech service. However, more factors are needed to including in research model to generalize these results.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1332-1342
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• 2014

This paper proposes a novel test circuit for SiC transistors. On-state resistance under practical application conditions is an important characteristic for the device reliability and conduction efficiency of SiC transistors. In order to measure the on-state resistance in practical applications, high voltage is needed, and high current is also necessary to ignite performance for the devices. A soft-switching circuit based on synchronous buck topology is developed in this paper. To provide high-voltage and high-current stresses for the devices without additional spikes and oscillations, a resonant circuit has been introduced. Using the novel circuit technology, soft-switching can be successfully realized for all the switches. Furthermore, in order to achieve accurate measurement of on-state resistance under switching operations, an active clamp circuit is employed. Operation principle and design analysis of the circuit are discussed. The dynamic measurement method is illustrated in detail. Simulation and experiments were carried out to verify the feasibility of the circuit. A special test circuit has been developed and built. Experimental results confirm that the proposed circuit gives a good insight of the devices performance in real applications.

• Proceedings of the KIEE Conference
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• 2008.11a
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• pp.391-393
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• 2008

This paper is analysed by switching overvoltage on operating reclosing in 154 [kV] combined transmission systems. Combined transmission systems are modeled by EMTP/ATPDraw program. It is fault condition that simulate high resistance earth fault. The simulation is carried out considering variation of parameters such as resistance value of fault point and rate of underground line.

• International journal of advanced smart convergence
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• v.9 no.2
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• pp.105-113
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• 2020

In this paper, we proposed a soft switched synchronous boost converter, which can perform discharging the battery, is proposed. The proposed converter has low switching loss even at high frequency operation due to its soft switching characteristics. The converter operates in synchronous mode to minimize conduction loss because of changing the rectified diode to MOSFET with a low on resistance. In this reason, the efficiency of the converter can be greatly improved in high frequency. In this paper, the battery discharger with a switching frequency of 100 kHz, has been designed. The designed converter also simulated to prove the converter's characteristics of synchronous operation as well as soft switching operation. The simulation shows that the proposed converter always meets the soft switching conditions of turning on and off switching in the zero voltage and zero current states. Therefore, simulation results have confirmed that the proposed battery discharge had soft switching characteristics. The simulation results have confirmed that the proposed battery discharger had soft switching and synchronous operation characteristics.