• Title/Summary/Keyword: Resistance offset

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Studies on the Blistering Resistance(I) - The influence of pigment ratio on blistering resistance - (블리스터링에 관한 연구(제1보) - 안료의 배합비가 블리스터링에 미치는 영향 -)

  • Lim, Won-Seok;Ha, Young-Baeck;Kim, Chang-Keun;Lee, Yong-Kyu
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.39 no.2 s.120
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    • pp.25-30
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    • 2007
  • Recently the use of web offset printing has been increasing, which can provide high print speed, mass production, and high print quality. However, high speed web offset printing has frequently undergone a blistering problem when the printed paper passes through hot air dryers. Blistering occurs in the middle of the base paper or in the coating layer. This paper focused on the blistering occurring in the base paper. In order to elucidate the effect of pigment ratio on blistering, 6 types of coating color were prepared with varying GCC/clay ratios and printability and blistering were investigated focusing on structure changes in the coating layer. When the clay content in the coating layer was increased, surface roughness and surface strength were decreased and paper gloss was increased. In addition, it was found that the coating layer structure with high clay content, which contains lots of discontinuous pores, hindered water vapors to penetrate out and, as a result, blistering occurred.

Design and Fabrication of a Active Resonator Oscillator for Local Oscillator in ISM Band(5.8GHz) (5.8GHz ISM대역 국부 발진기용 능동 공진 발진기 설계 및 제작)

  • 신용환;임영석
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.4
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    • pp.886-893
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    • 2004
  • In this paper, active resonator oscillator using active band pass filter with gain, active resonator with negative resistance using transistor(agilent ATF-34143) is designed and fabricated. Proposed active resonator oscillator for local oscillator in ISM band(5.8GHz) is designed with 5.5 GHz oscillation frequency. Designed active resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. Active resonator oscillators using active band pass filter with gain show the oscillation frequency of 5.6GHz with the output power of -2dBm and phase noise of -81dBc/Hz at the offset frequency of 100kHz. Active resonator oscillators active resonator with negative resistance show the oscillation frequency of 5.6, 5.8GHz with the output power of -4dBm and phase noise of -91dBc/Hz at the offset frequency of 100kHz.

Bridge Resistance Deviation-to-Period Converter for Resistive Biosensors (저항형 바이오 센서를 위한 브릿지 저항 편차-주기 변환기)

  • Chung, Won-Sup
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.7 no.1
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    • pp.40-44
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    • 2014
  • A bridge resistance deviation-to-period (BRD-to-P) converter is presented for interfacing resistive biosensors. It consists of a linear operational transconductance amplifier (OTA) and a current-controlled oscillator (CCO) formed by a current-tunable Schmitt trigger and an integrator. The free running period of the converter is 1.824 ms when the bridge offset resistance is $1k{\Omega}$. The conversion sensitivity of the converter amounts to $3.814ms/{\Omega}$ over the resistance deviation range of $0-1.2{\Omega}$. The linearity error of the conversion characteristic is less than ${\pm}0.004%$.

RELATIONSHIP BETWEEN STATIC AND DYNAMIC MAGNETORESISTANCE BEHAVIOR OF METALLIC ARTIFICIAL SUPERLATTICES

  • Song, Yong-Jin;Joo, Seung-Ki
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.567-569
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    • 1995
  • By using the ac field source which can change the applied field magnitude, frequency and dc offset field, the dynamic magnetoresistance characteristics of permalloy based multilayers which have different R-H(resistance-magnetic field) curves were monitored and compared with static magnetoresistance curves that were measured with electromagnet of VSM. Output of each sample according to the external field strength was identified and optimum bias position could be obtained.

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A Frequency Synthesizer using Low Voltage Active Inductor VCO (저전압 능동 인덕터 VCO를 이용한 주파수 합성기)

  • Yi, Soon-Jai;Lee, Dong-Keon;Jeong, Hang-Geun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.2
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    • pp.471-475
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    • 2010
  • This paper presents a frequency synthesizer using low voltage active inductor VCO(Voltage Controlled Oscillator). The low voltage active inductor VCO with feedback resistor increases its equivalent inductance and the quality-factor(Q). Under certain conditions, the low voltage active inductor with feedback resistor generates a negative resistance at the input. In this paper, the conditions for negative resistance are obtained by small signal analysis. The designed low voltage active inductor VCO covers a frequency band between 1059MHz and 1223MHz. The measured phase noise at 1.178GHz is -81.8dBc/Hz at 1MHz offset.

Designed OTP Generation Method Using Health Information (건강정보를 이용한 OTP 생성 방식 설계)

  • Choo, Yeun-Su;Kang, Jung-Ho;Kim, Kyoung-Hun;Park, Jea-Pyo;Jun, Moon-Seog
    • Journal of Digital Convergence
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    • v.13 no.8
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    • pp.315-320
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    • 2015
  • User Authentication in Online service is essential for accurate and safe service. For this user authentication, One Time Password(OTP) is frequently used. To satisfy one-time-use characteristic of OTP, Offset information to generate OTP or final OTP value get generated through OTP generator or security card which could be lost. In this study, OTP generation method that bypasses OTP generator or security card by using health information collected from u-Health care system is proposed. Suggestion is that health information collected through wearable devices get utilized to offset information that are applied in OTP generations. OTP generated using suggested methods showed similar results than current OTP generation methods in the collision resistance test which tests how often it generate same authentication numbers, this implies that new proposed method can be applied to various on-line services.

A Low Phase Noise 5.5-GHz SiGe VCO Having 10% Bandwidth

  • Lee Ja-Yol;Park Chan Woo;Bae Hyun-Cheol;Kang Jin-Young;Kim Bo-Woo;Oh Seung-Hyeub
    • Journal of electromagnetic engineering and science
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    • v.4 no.4
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    • pp.168-174
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    • 2004
  • A bandwidth-enhanced and phase noise-improved differential LC-tank VCO is proposed in this paper. By connecting the varactors to the bases of the cross-coupled transistors of the proposed LC-tank VCO, its input negative resistance has been widened. Also, the feedback capacitor Cc in the cross-coupling path of the proposed LC-tank VCO attenuates the output common-mode level modulated by the low-frequency noise because the modulated common-mode level jitters the varactor bias point and degrades phase noise. Compared with the fabricated conventional LC-tank VCO, the proposed LC-tank VCO demonstrates $200\;\%$ enhancement in tuning range, and 6 - dB improvement in phase noise at 6 MHz offset frequency from 5.4-GHz carrier. We achieved the phase noise of - 106 dBc/Hz at 6 MHz offset, and $10\;\%$ tuning range from the proposed LC-tank VCO. The proposed LC-tank VCO consumes 12 mA at 2.5 V supply voltage.

Low Phase Noise VCO Using Spiral Resonator (Spiral 공진기를 이용한 저위상 잡음 전압 제어 발진기)

  • Jwa, Dong-Woo;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.7
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    • pp.77-80
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    • 2008
  • In this paper, low phase noise VCO using novel compact microstrip spiral resonator is proposed. A spiral resonator has super compact dimension, low insertion losses in the passband and high level of rejection in the stopband with sharp cutoff and a large coupling coefficient value, which makes a high Q value, and has reduced the phase noise. To increase the tuning range of VCO, varactor diode has been connected at the tunable negative resistance in VCO. This VCO has presented the oscillation frequency of $5.686{\sim}5.841GHz$, harmonics -29.83 dBc and phase noise of $-115.16{\sim}-115.17dBc/Hz$ at the offset frequency of 100 KHz.

The Behavior of Bearing Capacity for the Precast files (기성말뚝의 지지거동)

  • 박영호
    • Journal of the Korean Geotechnical Society
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    • v.16 no.1
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    • pp.107-116
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    • 2000
  • Dynamic and static load tests are conducted in four construction sites by using steel pipe piles(SPP) and concrete piles to compare differences of load bearing mechanism. Steel pipe piles are instrumented with electric strain gages and are subject to dynamic load tests during driving. The damage of strain gages attached is checked simultaneously. Static load test is also conducted on the same piles after two to seven days' elapse. Then load-settlement behavior and shaft and/or tip resistances are measured. As a result, the allowable bearing capacity calculated by the Davisson's offset method of CAPWAP analysis shows 2~33% larger than that of static load test. The average value of allowable bearing capacity of static load test is closer to the allowable capacity obtained at the safety factor of 2.5 applied on ultimate bearing capacity than to the one obtained from the Davisson's offset method. The analysis of strain gage readings shows that unit skin friction increases with depth. Furthermore, the friction mobilized around the 1~2m above the pile tip considerably contributes to the total shaft resistance.

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Effect of the Calcination Temperature and Li(I) Doping on Ethanol Sensing Properties in p-Type CuO Thin Films

  • Choi, Yun-Hyuk
    • Korean Journal of Materials Research
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    • v.29 no.12
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    • pp.764-773
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    • 2019
  • The gas response characteristic toward C2H5OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 ℃. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.