• Journal of the Korea institute for structural maintenance and inspection
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• v.24 no.6
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• pp.67-76
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• 2020

This paper reports an experimental study to evaluate the flexural behavior of concrete beams reinforced using Fe based shape memory alloy (Fe-SMA) bars. For the experiment, a concrete beam of 200mm×300mm×2,200mm was produced, and a 4% pre-strained Fe-SMA bar was used as a tensile reinforcement. As experimental variables, type of tensile reinforcement (SD400, Fe-SMA), reinforcement ratio (0.2, 0.39, 0.59, 0.78), activation of Fe-SMA (activation, non-activation), and joint method of Fe-SMA bar (Continuous, welding, coupler) were considered. The electric resistance heating method was used to activate the Fe-SMA bar, and a current of 5A/㎟ was supplied until the specimen reached 160℃. After the upward displacement of the specimen due to the camber effect was stabilized, a three-point flexural loading experiment was performed using an actuator of 2,000 kN capacity. As a result of the experiment, it was found that the upward displacement occurred due to the camber effect as the Fe-SMA bar was activated. The specimen that activated the Fe-SMA bar had an initial crack at a higher load than the specimen that did not activate it. However, as with general prestressed concrete, the effect of the prestress by Fe-SMA activation on the ultimate state of the beam was insignificant.

• Journal of the Korea institute for structural maintenance and inspection
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• v.28 no.4
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• pp.1-12
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• 2024

In this study, a determination method of structural member section based on Nonlinear behaviors of steel cable-stayed bridges and the Harmony Search algorithm was presented. The Harmony Search algorithm determines the structural member section of cable-stayed bridges by repeating the process of setting the initial value, initializing the harmony memory, configuring the new harmony memory, and updating the harmony memory to search for the optimal value. The nonlinear initial shape analysis of a three-dimensional steel cable-stayed bridge was performed with the cross-section of the main member selected by the Harmony Search algorithm, and the optimal cross-section of the main members of the cable-stayed bridge, such as pylons, girders, cross-beams, and cables, reflecting the complex behavior characteristics and the nonlinearity of each member was determined in consideration of the initial tension and shape. The total weight was used as the objective function for determining the cross-section of the main member of the cable-stayed bridges, and the load resistance ability and serviceability based on the ultimate state design method were used as the restraint conditions. The width and height ratio of the girder and cross-section were considered additional restraint conditions. The optimal sections of the main members were made possible to be determined by considering the geometry and material nonlinearity of the pylons, girders, and cross-sections and the nonlinearity of the cable members. As a result of determining the optimal cross-section, it was confirmed that the proposed analysis method can determine the optimal cross-section according to the various constraint conditions of the cable-stayed bridge, and the structural member section of the cable-stayed bridge considering the nonlinearity can be determined through the Harmony Search algorithm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.1-7
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• 2010

In this paper, we suggested a sensing method of PoRAM with the multilevel cell When a specific voltage is applied between top and bottom electrodes of PoRAM unit cell, we can distinguish cell states by changing resistance values of the cell. Especially, we can use the PoRAM as the multilevel cell due to have four stable resistance values per cell. Therefore, we proposed an address decoding method, sense amplifier and control signal for sensing of a multilevel cell. The sense amplifier is designed based on a current comparator that compared a cell current the cell with a reference current, and have a low input impedance for a amplification of the current. The proposed circuit was designed in a $0.13{\mu}m$ CMOS technology, we verified to sense each data "00", "01", "10", "10" by four states of a cell current.

• Journal of the Korean Magnetics Society
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• v.25 no.2
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• pp.47-51
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• 2015

To achieve a high tunneling magneto resistance (TMR) of sputtered magnetic tunnel junctions (MTJs) with an MgO barrier, the annealing process is indispensable. The structural and compositional changes as consequences of the annealing greatly affect the spin-dependent transport properties of MTJs. Higher TMR could be obtained for MTJs annealed at higher annealing temperature. The diffusion of Ru, Mn and/or Ta in the MTJs may occur during annealing process, which is known to be detrimental to spin-dependent tunneling effect. The rapid thermal annealing (RTA) process was used for annealing the MTJs with synthetic antiferromagnets. To suppress the diffusion of Mn, Ru and/or Ta in the MTJs, the process time and temperature of RTA were minutely controlled.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.268-273
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• 2016

In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• Ceramist
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• v.21 no.2
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• pp.4-18
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• 2018

Lastly, neuromorphic computing chip has been extensively studied as the technology that directly mimics efficient calculation algorithm of human brain, enabling a next-generation intelligent hardware system with high speed and low power consumption. Three-terminal based synaptic transistor has relatively low integration density compared to the two-terminal type memristor, while its power consumption can be realized as being so low and its spike plasticity from synapse can be reliably implemented. Also, the strong electrical interaction between two or more synaptic spikes offers the advantage of more precise control of synaptic weights. In this review paper, the results of synaptic transistor mimicking synaptic behavior of the brain are classified according to the channel material, in order of silicon, organic semiconductor, oxide semiconductor, 1D CNT(carbon nanotube) and 2D van der Waals atomic layer present. At the same time, key technologies related to dielectrics and electrolytes introduced to express hysteresis and plasticity are discussed. In addition, we compared the essential electrical characteristics (EPSC, IPSC, PPF, STM, LTM, and STDP) required to implement synaptic transistors in common and the power consumption required for unit synapse operation. Generally, synaptic devices should be integrated with other peripheral circuits such as neurons. Demonstration of this neuromorphic system level needs the linearity of synapse resistance change, the symmetry between potentiation and depression, and multi-level resistance states. Finally, in order to be used as a practical neuromorphic applications, the long-term stability and reliability of the synapse device have to be essentially secured through the retention and the endurance cycling test related to the long-term memory characteristics.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.212-214
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• 2004

In this study, we fabricated the organic thin film by self-assembly method by using nitro-group and methoxy-group organic molecule. Also, we selected the organic single molecule in organic thin film and measured current-voltage characteristics by using scanning tunneling microscopy. The Organic molecules that use in an experiment is 4,4'-(diethynylphenyl)-2'-nitro-1-benzen ethiol and 4-[2,5-dimethoxy-4-ph enylethynylphenyl]ethynylphenylethanthiol. 4,4'-(dimet hynylphenyl)-2'-nitro-1-benzenethiol is applied widely in molecular electronic device and 4-[2,5-dime thoxy-4-phenylethynylphenyl]ethynylphenylethanthiol composed in Korea Research Institute of Chemical Technology. To be confirmed the formation of the self-assembled monolayers, we observed the real time frequency shift of the QCM and investigated surface of the self-assembled monolayers the using STM. With this, we measured current to the organic single molecule, in condition of the air state. As a result, we confirmed in constant voltage that properties of negative differential resistance. Using properties of negative differential resistance to get from this study, application is expected to be molecular switching device, memory device and logic device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.321-322
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• 2006

The electrical properties of PZT thin film capacitor on TiN/W plug structure were investigated for high density ferroelectric memory devices. In order to enhance the ferroelectric properties of PZT capacitor, the process conditions of bottom electrodes were optimized. The fabricated PZT capacitor on TiN/W plug showed good remanent polarization, leakage current, and contact resistance of TiN/W plug, which were $33\;{\mu}C/cm^2$, $1.2{\times}10^{-6}\;A/cm^2$, and 5.3 ohm/contact, respectively.