• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.55-55
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• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.73-73
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• 2006

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.31-32
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• 2006

• The Bulletin of The Korean Astronomical Society
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• v.35 no.2
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• pp.48.2-48.2
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• 2010

Quiescent filaments are bigger, more stable, and longer lived than active region filaments. So, the shape of a quiescent filament changes little during its lifetime and a fast motion of plasma rarely occurs. But when it is dynamically influenced by external phenomena, a rapid motion of plasma may temporarily occur. By analyzing the motion of plasma we can infer some of the magnetic structure permeating such an excited quiescent filament. We analyzed the H$\alpha$ images of a quiescent filament in the northern hemisphere that was observed at Big Bear Solar Observatory on 2004 August 2, and found that: 1) the filament was excited by a flare that occurred in a remote active region located in the southern hemisphere, 2) By this excitation, a part of the filament moved vertically upward and horizontally out of main body, and then it stayed there without much motion. Then after it moved vertically downward and horizontally to the main body, 3) the final position of plasma, however, was not the same as the initial position, being about 14Mm above it. We suggest that the filament was initially in a more or less static equilibrium. The excitation of the filament broke the initial equilibrium, and then brought about a new one that is different from the original one. Since the filament should have magnetic field, it is likely that both the equilibria may have been maintained by diplike magnetic structures. Furthermore, the transition from one equilibrium to another as we inferred should have accompanied a permanent change of magnetic configuration as well.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.60-61
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• 2017

본 논문에서는 플라스마 부하의 특성을 고려하여 LCCL 공진 네트워크가 적용된 RPG (remote plasma generator)용 공진형 인버터를 설계 하고 제어한다. 공진네트워크 설계와 인버터 제어 시, 플라스마 부하가 가지는 특징인 Drop-out 현상을 방지하면서 정격범위 내에서 출력 전류를 얻을 수 있도록 하기 위해 위상천이 기법을 적용할 수 있도록 설계하고 시뮬레이션을 통해 설계된 공진네트워크의 타당성을 검증한다.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.18-21
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• 2020

Undetected wafer slip during the lift pin-down motion in semiconductor equipment may affect the center to edge variation, wafer warpage, and pattern misalignment in plasma equipment. Direct measuring of the amount of wafer slip inside the plasma process chamber is not feasible because of the hardware space limitation inside the plasma chamber. In this paper, we demonstrated a practice for the wafer lift pin-up and down motions with respect to the gear ratio, operating voltage, and pulse width modulation to maintain accurate wafer position using remote control linear servo motor with an experimentally designed chamber mockup. We noticed that the pin moving velocity and gear ratio are the most influencing parameters to be control, and the step-wised position control algorithm showed the most suitable for the reduction of wafer slip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.242-242
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• 2010

산화 알루미늄($Al_2O_3$) 박막을 p-type Czochralski(CZ) Si 위에 Remote Plasma Atomic Layer Deposition(RPALD)을 이용하여 저온 공정으로 증착하였다. Photolithography 공정으로 grid 패턴을 형성한 후 열 증착기로 알루미늄을 증착하여 MIS-IL (Metal-Insulator-Semiconductor Inversion Layer) solar cell을 제작하였다. 반응소스로는 Trimethylaluminum (TMA)과 $O_2$를 이용하였다. $Al_2O_3$ 박막의 전기적 특성 평가를 위해 MIS capacitor를 제작하여 Capacitance-voltage (C-V), Current-voltage (I-V), Interface state density ($D_{it}$)를 평가하였으며 Solar simulator를 이용하여 MIS-IL Solar cell의 Efficiency을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.115-116
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• 2008

The ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) and $Al_2O_3$ passivation layer for the Metal/Insulator/Ferroelectric/Semiconductor (MIFS) structure were deposited using spin coating and remote plasma atomic layer deposition (RPALD), respectively. A 2.5 ~ 3 wt % diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$: TrFE=70:30) in a DMF solution were prepared and deposited on silicon wafer at a optimized spin speed. After annealing in a vacuum ambient at 150 ~ $200^{\circ}C$ for 60 min, upper insulator layer were deposited at temperature ranging from 100 ~ $150^{\circ}C$ by RPALD. We described electrical and structural properties of MIFS fabricated by spin coating and RPALD methods.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.43-50
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• 1998

Transparent and conducting tin oxide films were prepared on Pyrex glass substrates by the remote plasma chemical vapor deposition (RPCVD). The main control variables of the RPCVD process included the deposition time, the flow rates of tetramethyltin, oxygen and argon, the radio-frequency power, and the substrate temperature. Dependence of the deposition rate, electric resistivity, optical transmittance and crystal structure on these parameters was systematically examined to prepare high qualities of tin oxide films and to better understand RPCVD process. The effect of those parameters on the properties of tin oxide films in complicatedly related on another. A tin oxide film parameters on the protimized deposition conditions exhibited deposition rate of 102 $\AA$/min, electric resistivity of $9.7\times 10^{-3}\Omega$cm and visible transmittance of ~80%.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.