• Title/Summary/Keyword: Remote Plasma

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XPS study of sapphire substrate surface nitridated by plasma activated nitrogen source (Plasma로 활성화된 질소 원자를 사용한 사파이어 기판 표면의 저온 질화처리의 XPS 연구)

  • 이지면;백종식;김경국;김동준;김효근;박성주
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.320-327
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    • 1998
  • The chemical aspects of nitridated surface of sapphire(0001) have been studied by X-ray photoelectron spectroscopy. Nitridated layer was formed by remote plasma enhanced-ultrahigh vacuum deposition at a low temperature range. It was confirmed that this nitridated surface was mainly consists of AIN layer. The relative amounts of nitrogen reacted with AL on the sapphire surface and their surface morphology were investigated with X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) as a function of radio-frequency power, reaction temperature, and reaction time. The amounts of atomic nitrogen activated by plasma which was subsequently incorporated into sapphire were increased with RF power. But the amounts of nitrogen reacted with AI in sapphire was initially increased and then remained constant. However, the relative amounts of AIN were nearly constant with irrespective of nitridation temperature and time. Furthermore, a depth porfile of nitridated layer with XPS showed that the nitridated surface consisted of three layers with different stoichiometry.

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Nanoparticles Synthesis and Modification using Solution Plasma Process

  • Mun, Mu Kyeom;Lee, Won Oh;Park, Jin Woo;Kim, Doo San;Yeom, Geun Young;Kim, Dong Woo
    • Applied Science and Convergence Technology
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    • v.26 no.6
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    • pp.164-173
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    • 2017
  • Across the most industry, the demand for nanoparticles is increasing. Therefore, many studies have been carried out to synthesize nanoparticles using various methods. The aim of this paper is to introduce an industry-applicable as well as financially and environmentally effective solution plasma process. The solution plasma process involves fewer chemicals than the traditional kit, and can be used to replace many of the chemical agents employed in previous synthesis of nanoparticles into plasma. In this study, this process is compared to the wet-reaction process that has thus far been widely used in the most industry. Furthermore, the solution plasma process has been classified into four different types (in-solution, out of solution, direct type, and remote type), according to its plasma occurrence position and plasma types. Thus, the source of radicals, nanoparticle synthesis, and modification methods are explained for each design. Lastly, unlike nanoparticles with hydrophilic functional groups that are made inside the solution, a nanoparticle synthesis and modification method to create a hydrophobic functional group is also proposed.

Atmospheric Pressure Plasma Ashing of Photoresist Using Pin to Plate Dielectric Barrier Discharge

  • Park, Jae-Beom;Oh, Jong-Sik;Yeom, Geun-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1500-1503
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    • 2009
  • In this paper, we studied about atmospheric pressure remote plasma ashing of photoresist(PR), by using a modified dielectric barrier discharge(DBD). The effect of various gas combinations such as $N_2/O_2$, $N_2/O_2+SF_6$ on the changes PR ashing rate was investigated as a function of power. The maximum PR ashing rate of 1850 nm/min was achieved at $N_2$ (70 slm)/ $O_2$ (200 sccm) + $SF_6$ (3 slm). We found that as the oxygen and fluorine radical peaks were increased, the ashing rate is increased, too.

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