• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.183-188
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• 2002

With the contact pad consisted of $0.5{\mu}{\textrm}{m}$ $Au/5{\mu}{\textrm}{m}$ Ni/Cu layers on a conventional ball grid array(BGA) substrate, metallurgical reaction properties between the pad and In-15(wt.%)Pb-5Ag solder alloy were studied after reflow and solid aging. In as-reflow condition, thin AuIn$_2$or Ni$_{28}$In$_{72}$ intermetallic layer was formed at the solder/pad interface according to reflow time. Dissolution of the Au layer into the molten solder was remarkably limited in comparison with eutectic Sn-37Pb alloy. After solid aging of 300 hrs, thickness of In-Ni layer increased to about $2{\mu}{\textrm}{m}$ in the both as-reflow case. It was observed that In atoms diffuse through the AuIn$_2$phase to react with underlaying Ni layer. The metallurgical reaction properties between In-l5Pb-7Ag alloy and Au/Ni surface finish were analysed to result in suppression of Au-embrittlement in the solder joints.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.71-77
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• 2007

In this study, the mechanical and electrical properties of three different ball grid array (BGA) solder joints, consisting of Sn-37Pb, Sn-3.5Ag and Sn-3.5Ag-0.75Cu (all wt.%), with organic solderability preservative (OSP)-finished Cu pads were investigated as a function of reflow number. Based on scanning electron microscopy (SEM) analysis results, a continuous $Cu_6Sn5$, intermetallic compound (IMC) layer was formed at the solder/substrate interface, which grew with increasing reflow number. The ball shear testing results showed that the shear force peaked after 3 reflows (in case of Sn-Ag solder, 4 reflows), and then decreased with increasing reflow number. The electrical property of the joint gradually decreased with increasing reflow number.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.1-7
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• 2008

We studied a growth behavior of Intermetallic compounds(IMCs) during solder bumping with two reflow methods. Ti(50 nm), Cu($1{\mu}m$), Au(50 nm) and Ti(50 nm) thin films were deposited on $SiO_2$/Si wafer using the DC magnetron sputtering system as the under bump metallization(UBM). And the $5{\mu}m$ thick Cu bumps and $20{\mu}m$ thick Sn bumps were fabricated on UBM by electroplating. Sn bumps were reflowed in RTA(Rapid Thermal Annealing) system and convection reflow oven. When RTA system was used, reflow was possible without using flux and IMC thickness formed in the solder interface was thinner than that of a convectional method.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.7-11
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• 2009

In this study, solder joints were made with Sn-3.5Ag (wt%) solder ball. Electroless nickel / immersion gold (ENIG) printed circuit board (PCB) substrates were employed in this work. The mechanical and electrical properties were measured as a function of the number of reflow. Die shear strength was measured with increasing reflow number. Until the forth or fifth reflow, shear force increased and after the fifth reflow the shear force of die decreased. The electrical resistivity of solder joint linearly increased with increasing reflow number.

• Tribology and Lubricants
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• v.38 no.3
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• pp.93-100
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• 2022

Micro-light emitting diode (micro-LED) displays offer numerous advantages such as high brightness, fast response, and low power consumption. Hence, they are spotlighted as the next-generation display. However, defective LEDs may be created due to non-uniform contact loads or LED alignment errors. Therefore, a repair process involving the replacement of defective LEDs with favorable ones is necessitated. The general repair process involves the removal of defective micro-LEDs, interconnection material transfer, as well as new micro-LED transfer and bonding. However, micro-LEDs are difficult to repair since their size decreases to a few tens of micron in width and less than 10 ㎛ in thickness. The conventional nozzle-type dispenser for fluxes and the conventional vacuum chuck for LEDs are not applicable to the micro-LED repair process. In this study, transfer conditions are determined using a micro stamp for repairing micro-LEDs. Results show that the aging time should be set to within 60 min, based on measuring the aging time of the flux. Additionally, the micro-LEDs are subjected to a compression test, and the result shows that they should be transferred under 18.4 MPa. Finally, the I-V curves of micro-LEDs processed by the laser and hot plate reflows are measured to compare the electrical properties of the micro-LEDs based on the reflow methods. It was confirmed that the micro-LEDs processed by the laser reflow show similar electrical performance with that processed by the hot plate reflow. The results can provide guidance for the repair of micro-LEDs using micro stamps.

• Journal of the Korea Institute of Military Science and Technology
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• v.23 no.6
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• pp.574-581
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• 2020

This paper describes the stacking effect for Ceramic Column Grid Array(CCGA) packages used for satellites. Reflow Soldering Process suitable for CCGA package with back structure was set as the process development goal to meet European Cooperation for Space Standardization(ECSS) standard. After analyzing the stacking effect according to the type of CCGA, it is verified by applying it to the CCGA Reflow Soldering Process. In order to confirm the validity of the staking effect analyzed in terms of vibration and thermal characteristics, it is verified through actual specimen production. It analyzes the cause of crack occurrence in the CCGA package and estimates the crack generation point using previously acquired inspection data.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.315-318
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• 2005

The effect of plasma cleaning was examined on package delamination phenomena in the integrated circuit (IC) packaging process. Without plasma cleaning, delamination was observed for all three experimental treatments applied after the packaging step, which include bake of If, reflow, and bake of If followed by reflow However, no delamination was observed when the plasma cleaning was performed before and after the wire bonding step. Plasma cleaning was found to be a critical step to improve the reliability of the package by reducing the possibility of contact failure between die pad and bonding wire.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.37-48
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• 1998

The popcorn cracking phenomena in plastic IC packages during reflow soldering are investigated by considering the heat transfer and moisture diffusion through the epoxy molding compound(EMC) along with the mechanics of interface delamination. Heat transfer and moisture diffusion through EMC under die pad are analyzed by finite difference method (FDM)during the pre-conditioning and subsequent reflow soldiering pro-cess and the amounts of moisture mass and vapor pressure at delaminated die pad/ EMC interface are calculated as a function of the reflow soldering time. The energy release rate stress intensity factor and phase angle were obtained under various loading conditions which are thermal crack face vapor pressure and mixed loadings. It was shown that thermal loading was the main driving force for the crack propagation for small crack lengths but vapor pressure loading played more significant role as crack grew.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.192-193
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• 2000

We studied the characteristics and fabricated the plano-convex refractive microlenses using the thermal reflow method. The exposed resist was resolved in a standard developing process. The remaining resist of circle pattern was melted in an oven 12$0^{\circ}C$ to 15$0^{\circ}C$. The shape of the melted resist microlenses is ruled by surface tension. Diameter and hight of the fabricated microlenses were 250${\mu}{\textrm}{m}$ to 325${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ to 22${\mu}{\textrm}{m}$, respectively. The surface profile was calculated using data curve-fitting method with circle equation. The optical characteristics was analysed using optical simulation program.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.128-132
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• 2003

무전해 Ni-P UBM과 3가지 경우의 무연 솔더간의 계면연구를 통해 Bi가 솔더의 합금원소로 들어감에 따라 계면반응에 어떠한 영향을 줄 수 있는 가를 연구했다. 3가지 다른 무연 솔더는 Bi가 각각 $0wt\%,\;4.8wt\%,\;58wt\%$들어간 Sn3.5Ag, Sn3.5Ag4.8Bi, Sn58Bi 이다. reflow를 수행한 후에 세 가지 솔더에서 나타나는 계면에서의 IMC는 $Ni_3Sn_4$로서 어떤 다른 솔더도 Bi를 함유한 IMC가 계면에선 관찰되지 않았다. 다만 SnAgBi 솔더의 경우 특이하게 솔더내에서 침상의 $Ni_3Sn_4$가 reflow후에 관찰되었다. 또한 반응속도의 척도가 되는 Ni-P UBM소모속도를 비교해 보면 reflow후의 SnAg와 SnAgBi의 경우에는 비슷하나 SnBi의 경우에는 알서 두 솔더에 비해 눈에 띠게 느림을 관찰하였다. 이러한 Ni-P UBM의 소모경향을 Bi의 함량, 그에 따른 Sn의 상대적인 함량의 관점에서 고찰하고자 한다.