• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2018.10a
• /
• pp.80-81
• /
• 2018

헬스케어 웨어러블 디바이스(Healthcare Wearrable Device)는 신체에 부착하거나 신체의 한 부분으로 결합시켜 인체의 건강에 대하여 사용자의 의지에 따라 관리 할 수 있도록 돕는 모든 기기를 의미하며 한때 웨어러블 기기에 대한 소비자들의 관심이 높아 많은 종류의 디바이스 개발 및 상품이 나왔으나 사용자들의 사용빈도와 새로운 사용자의 감소가 이루어지고 있다. 이에 사용자로써 감소에 대한 원인 분석 및 대책 방안 마련을 위한 연구이다.

• Journal of the Semiconductor & Display Technology
• /
• v.13 no.4
• /
• pp.55-58
• /
• 2014

The next-generation AlGaN/GaN HEMT power devices need higher power at higher frequencies. To know the device characteristics, the simulation of those devices are made. This paper presents a simulation study on the DC and RF characteristics of AlGaN/GaN HEMT power devices. According to the reduction of gate length from $2.0{\mu}m$ to $0.1{\mu}m$, the simulation results show that the drain current at zero gate voltage increases, the gate capacitance decreases, and the maximum transconductance increases, and thus the cutoff frequency and the maximum oscillation frequency increase. The maximum oscillation frequency maintains higher than the cutoff frequency, which means that the devices are useful for power devices at very high frequencies.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.12
• /
• pp.559-561
• /
• 2003

We report a new excimer laser annealing method which successfully results in a single grain boundary formation in the channel of polycrystalline silicon thin film transistor. The proposed method is based on lateral grain growth and employs aluminum patterns which act as selective beam mask and lateral heat sink. The maximum grain size obtained by the proposed method is about 1.6${\mu}{\textrm}{m}$ in the length. The grainboundaries should be arranged parallel with the direction of current flow for the best device performance, so we propose a new device fabrication method and a new poly-Si TFT structure. Poly-Si TFT fabricated by the proposed method exhibits considerably improved electrical characteristics, such as high field effect mobility exceeding 240 $cm^2$/Vsec.

• Journal of the Korean Society of Combustion
• /
• v.22 no.1
• /
• pp.23-31
• /
• 2017

Large-scale fuel tanks emit massive amount of hardly-combustible VOC mixtures which are light hydrocarbon species in dilution with nitrogen and carbon dioxide. We have developed a lab-scale burner to combust those VOC mixtures by use of a turbulent partially-premixed flame as a pilot flame. For a higher HC treatment ratio, the mixture gases were reformed by a rotating arc plasma device. The results showed that the nitrogen mole fraction and the injecting speed of the VOC mixture influence on the performance of the burner. It was also found that the size of the pilot flame and the power supplied to the plasma device determine the overall HC treatment ratio and the concentrations of CO and NOx in the exhaust gas.

• 연구논문집
• /
• s.24
• /
• pp.5-11
• /
• 1994

EGR is an efficient method for reduction of NOx from diesel exhaust emission since it is simple to install with low cost and effective in its performance however it has demerits such as incresing wear on the moving parts of engines. stainning intake system and deteriorate lubricating oil. In order to reduce the soot contents in the recirculating gas to intake system of the engine, a proper filtering device was desined and manufactered for experiment system. It is aimed to grasp the characteristics of pollutant emissions including SFC on EGR system equipped with soot removal device.

• Proceedings of the KIEE Conference
• /
• 1994.11a
• /
• pp.156-158
• /
• 1994

In recent days, the various adjustable speed drives are widely employed at the industrial applications for the purpose of energy saving and speed control. In particular, for the machine control applications. the switching frequency is required to be increased for better dynamic performance of the drive. Moreover, this also leads to the reduction of the switching loss of the device. For IGBT (Insulated Gate Bipolar Transistor), the most widely used switching device in the inverters below the 100[kW] range, the falling and falling time is of the order about $200{\sim}300[ns]$. Therefore unexpected phenomena occurs such as voltage spikes due to high gradient of current at the switching instant, the weakening of motor insulation due to high gradient of voltage. In this paper, a new voltage gradient suppression technique is presented in both theoretically and experimentally.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1335-1336
• /
• 2007

Among the emerging non-volatile memory technologies, phase change memories are the most attractive in terms of both performance and scalability perspectives. Phase-change random access memory(PRAM), compare with flash memory technologies, has advantages of high density, low cost, low consumption energy and fast response speed. However, PRAM device has disadvantages of set operation speed and reset operation power consumption. In this paper, we investigated scalability of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material to improve its properties. As a result, reduction of phase change region have improved electrical properties of PRAM device.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.269-269
• /
• 2013

Redox cycling in between the two working electrodes in an electrochemical cell can lead a great signal enhancement. In this work, we report on a systematic examination of current amplification along with the decrease in the gap distance of a nanogap device which was fabricated by the combination of photo and chemical lithography [1]. The gap distance was controlled by the chemical lithographic process of surfacecatalyzed growth of metallic layer on pre-defined electrodes with wider initial gap. Enhancement of the redox current of ferri/ferrocyanide was observed upon gap distance reduction and the current is amplified about a thousand times in this redox system when the gap distance was decreased from 200 nm to 30 nm. The experimental results were discussed on the basis of the cyclic voltammetry (CV), atomic force microscopy (AFM) and scanning electron microscopy (SEM).

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.7
• /
• pp.22-29
• /
• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2005.11a
• /
• pp.469-474
• /
• 2005

The most recent trend on digital hearing aid is to increase the ratio of signal to noise by directivity or to develop noise reduction algorithm inside DSP IC chip. This paper designed, fabricated and tested a digital hearing aid directivity testing device in which a micro-mouse-1ike the stepping motor with a speaker rotates around an examinant. Both ears of the examinant were fixed with ITE hearing aids in order to response to receiving sound. The experimental results were compared with a boundary element method program for verification. The diameter of the directivity testing device was 2 [m] and the micro-mouse was precisely controlled by PICBASIC micro processor.