• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.196-200
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• 2016

We have developed new electrostatic discharge (ESD) protection devices with, bidirectional flip chip transient voltage suppression. The devices differ in their epitaxial (epi) layers, which were grown by reduced pressure chemical vapor deposition (RPCVD). Their ESD properties were characterized using current-voltage (I-V), capacitance-voltage (C-V) measurement, and ESD analysis, including IEC61000-4-2, surge, and transmission line pulse (TLP) methods. Two BD-FCTVS diodes consisting of either a thick (12 μm) or thin (6 μm), n-Si epi layer showed the same reverse voltage of 8 V, very small reverse current level, and symmetric I-V and C-V curves. The damage found near the corner of the metal pads indicates that the size and shape of the radius governs their failure modes. The BD-FCTVS device made with a thin n- epi layer showed better performance than that made with a thick one in terms of enhancement of the features of ESD robustness, reliability, and protection capability. Therefore, this works confirms that the optimization of device parameters in conjunction with the doping concentration and thickness of epi layers be used to achieve high performance ESD properties.

• The Journal of Korean Academy of Prosthodontics
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• v.27 no.2
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• pp.79-100
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• 1989

The Purpose of this study was to investigate material differences in stress transmission among various artificial teeth and denture base materials. For this study, a two-dimensional finite element model and a two-dimensional photoelastic model of a mandible with complete denture were made. A resin tooth and a porcelain tooth were used as artificial teeth, and a resin base, a metal lined base, and a soft-liner lined base were used as denture bases. An occlusal load was applied and principal stresses generated in the supporting tissues were compared. To test the impact stress transmission, strain gauge attached to the denture base specimens made of the different materials were made in thick and thin groups. Voltage outputs from hitting the specimen with a steel ball were compared. The results were as follows : 1. In FEM, increasing the mucosal thickness reduced the maximum principal stresses in the supporting tissues, but altering the tooth materials and the base materials induced no difference in the stresses. 2. In photoelastic model study, no difference in fringe order among the specimens were observed, but the thick mucosa group and the soft-liner lined group revealed a more uniform distribution of the load. 3. In strain measuring, the impact force transmission was highest in the soft-liner lined group, and was the lowest in the metal lined group(p<0.01). 4. In the thin group using the resin base, the porcelain tooth showed higher impact stress transmission than the resin tooth(p<0.01), but no difference was observed between them in the thick group. In the soft-liner lined group, the porcelain tooth showed higher impact stress transmission than the resin tooth(p<0.01), but no difference was observed between them in the metal lined group. 5. The thick group showed lower impact stress transmission than the thin group(p<0.01).

• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.91-97
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• 2007

In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.708-712
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• 2001

A new phase-shifted parallel-input/series-output (PI SO) dual inductor-fed push-pull converter for high-power step­up applications is proposed. This converter is operated at a constant duty cycle and employs an auxiliary circuit to control the output voltage with a phase-shift between the two modules. It features a voltage conversion characteristic which is linear to changes in the control input, and high step-up ratio with a greatly reduced switch turn-off stress resulting in a significant increase in the converter efficiency. It also shows a low ripple content and low root-mean-square (RMS) current in the output capacitor. The operational principle is analyzed and a comparative analysis with the conventional pulse-width-modulated (PWM) PISO dual inductor-fed push-pull converter is presented. A 50kHz, 800W, 350Vdc prototype with an input of 20-32Vdc has also been constructed to validate the proposed converter. The proposed converter compares favorably with the conventional counterpart and is considered well suited to high-power step-up applications.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.130-138
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• 1996

The size of a device needs to scale down to increase its integrity and speed. As the size of the device is reduced, the hot-carrier degradation that severely effects on device reliabilty is concerned. In this paper, sub-micron buried-channel P-MOSFETs were fabircated, and the hot-carrier effects were invetigated. Also the hot-carrier effect in the buired-channel P-MOSFETs and the surface-channel P-MOSFETs were compared with simulation programs using SUPREM-4 and MINIMOS-4. This paper showed that the electric characteristics of sub-micron P-MOSFET are different from those of N-MOSFET. Also it showed that the punchthrough voltage ( $V_{pt}$ ) was abruptly drop after applying the stress and became almost 0V when the channel lengths were shorter than 0.6.mu.m. The lower punchthrough voltage causes the device to operte poorly by the deterioration of cut-off characteries in the switching mode. We can conclude that the buried channel P-MOSFET for CMOS circuits has a limit of the channel length to be around 0.6.mu.m.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.1
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• pp.54-62
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• 2013

This paper proposes a high-efficiency DC-DC converter with improved dynamic response characteristics for modular photovoltaic power conversion. High power efficiency is achieved by reducing switching power losses of the DC-DC converter. The voltage stress of power switches is reduced at primary side. Zero-current switching of output diodes is achieved at secondary side. A modified proportional and integral controller is suggested to improve the dynamic responses of the DC-DC converter. The performance of the proposed converter is verified based on a 200 [W] modular power conversion system including the grid-tied DC-AC inverter. The proposed DC-DC converter achieves the efficiency of 97.9 % at 60 [V] input voltage for a 200 [W] output power. The overall system including DC-DC converter and DC-AC inverter achieves the efficiency of 93.0 % when 200 [W] power is supplied into the grid.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• Journal of IKEEE
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• v.23 no.1
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• pp.261-265
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• 2019

We analyze the failure rate change of a conventional bidirectional converter and a modified one which moves an output capacitor towards propulsion battery. We analysis of the circuit structural homogeneity and the difference between both converters, and confirm that the capacitor working voltage is reduced by changing the capacitor position. After obtaining the capacitor failure rate according to voltage stress factor and operating temperature, it is applied to the fault-tree of the bidirectional converter to obtain the overall failure rate of the converter. We analyzes the advantages and disadvantages of design changes by comparing and analyzing the failure rate and mean time between failures (MTBF) according to operating temperature and capacitance value.

• Journal of Power Electronics
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• v.19 no.2
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• pp.363-379
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• 2019

Resonant converters have attracted a lot of attention because of their high efficiency due to the soft-switching performance. An isolated high step-up converter with secondary-side resonant loops is proposed and analyzed in this paper. By placing the resonant loops on the secondary side, the current stress for the resonant capacitors is greatly reduced. The power loss caused by the equivalent series resistance of the resonant capacitor is also decreased. Clamp diodes in parallel with the resonant capacitors ensure a unique discontinuous current mode in the converter. Under this mode, the active switches can realize soft-switching during both turn-on and turn-off transitions. Meanwhile, the reverse-recovery problems of diodes are also alleviated by the leakage inductor. The converter is essentially a step-up converter. Therefore, it is helpful for decreasing the transformer turn-ratio when it is applied as a high step-up converter. The steady-state operation principle is analyzed in detail and design considerations are presented in this paper. Theoretical conclusions are verified by experimental results obtained from a 500W prototype with a 35V-42V input and a 400V output.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.125-131
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• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.