• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.142-147
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• 2021

We present a subthreshold swing model for a symmetric junctionless double gate MOSFET. The scale length λ1 required to obtain the potential distribution using the Poisson's equation is a criterion for analyzing the short channel effect by an analytical model. In general, if the channel length Lg satisfies Lg > 1.5λ1, it is known that the analytical model can be sufficiently used to analyze short channel effects. The scale length varies depending on the channel and oxide thickness as well as the dielectric constant of the channel and the oxide film. In this paper, we obtain the scale length for a constant permittivity (silicon and silicon dioxide), and derive the relationship between the scale length and the channel length satisfying the error range within 5%, compared with a numerical method. As a result, when the thickness of the oxide film is reduced to 1 nm, even in the case of Lg < λ1, the analytical subthreshold swing model proposed in this paper is observed to satisfy the error range of 5%. However, if the oxide thickness is increased to 3 nm and the channel thickness decreased to 6 nm, the analytical model can be used only for the channel length of Lg > 1.8λ1.

• Journal of Surface Science and Engineering
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• v.57 no.5
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• pp.425-431
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• 2024

As demand in the electric vehicle market increases, the development of high capacity, high energy density lithium-ion batteries (LIBs) is required. Silicon has a extremely high theoretical capacity of 4200 mAh/g, but low cycle life and structural instability due to high volume expansion during charging and discharging are critical issue to solve. A reduced silicon oxide has also a high theoretical capacity of 2500 mAh/g and recently studied extensively for its low-cost, superior cycle life, and structural stability. In this study, we first synstheized SiO₂ particles by sol-gel method using tetraethyl orthosilicate (TEOS) precursor. The SiO₂ particle size was controlled with an average particle size of 300-600 nm by the addition amount of TEOS, NH₃, and H₂O. The synthesized SiO₂ particles were reduced to SiO_x through the magnesiothermic reduction reaction (MRR), and electrochemical characteristics were evaluated according to the particle size of SiO_x. For electrochemical characterization, SiO_x (10 wt.%) was mixed with graphite, and 2032 half cells were fabricated to obtain charge-discharge curve, cycle performance, rate performance, and electrochemical impedance spectroscopy curves. As a result, the mean size of SiO_x particle decreases from 600 to 300 nm, the initial discharge capacity increases from 459.9 to 556.5 mAh/g with the single capacity from 1359.4 to 2325.3 mAh/g, respectively. Finally, the present result shows the availability of MRR process to obtain reduced silicon oxide particles and sized dependent electrochemical properties to develop high capacity and high energy density LIBs.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.83-90
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• 1998

The effects of dopant activation anneal on GOI (Gate Oxide Integrity) of MOS capacitor with amorphous silicon gate electrode were investigated. It was found that the amorphous silicon gate electrode was crystallized and the dopant atoms were sufficiently activated by activation anneal. The mechanical stress of gate electrode that reveals large compressive stress in amorphous state, was released with increase of anneal temperature from $700^{\circ}C$ to 90$0^{\circ}C$. The resistivity of gate electrode polycrystalline silicon film is decreased by the increase of anneal temperature. The reliability of thin gate oxide and interface properties between oxide and silicon substrate greatly depends on the activation anneal temperature. The charge trapping characteristics as well as oxide reliability are improved by the anneal of 90$0^{\circ}C$ compare to that of $700^{\circ}C$ or 80$0^{\circ}C$. Especially, the lifetimes of the thin gate oxide estimated by TDDB method is 3$\times$10$^{10}$ for the case of $700^{\circ}C$ anneal, is significantly increased to 2$\times$10$^{12}$ for the case of 90$0^{\circ}C$ anneal. Finally, the interface trap density is reduced with relaxation of mechanical stress of gate electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.21-22
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• 2005

Partially-depleted Silicon on insulator metal-oxide-semiconductor field- effect transistors (PD-SOI MOSFETs) with Silicon-germanium (SiGe) layer is investigated. This structure uses SiGe layer to reduce the kink effect in the floating body region near the bottom channel/buried oxide interface. Among many design parameters influencing the performance of the device, Ge composition is presented most predominant effects, simulation results show that kink effect is reduced with increase the Ge composition. Because the bandgap of SiGe layer is reduced at higher Ge composition, the hole current between body and SiGe layer is enhanced.

• Journal of Korean Ophthalmic Optics Society
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• v.19 no.3
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• pp.315-322
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• 2014

Purpose: The physical and optical characteristics of hydrophilic tinted contact lens containing titanium silicon oxide nanoparticles and the basic hydrogel contact lens material containing 4-iodoaniline were examined. In this study, the utility of titanium silicon oxide nanoparticles as a UV-blocking material for ophthalmologic devices were investigated by measuring the UV transmittance of the produced polymer. Also, titanium silicon oxide nanoparticles only without the addition of 4-iodoaniline in primary contact lens materials by copolymerizing two groups were compared. Methods: For manufacturing hydrogel lens, HEMA, MA, MMA, 4-iodoaniline and a cross-linker EGDMA were copolymerized in the presence of AIBN as an initiator. Also, the titanium silicon oxide nanoparticles was used as additive. After polymerization the physical properties such as water content, refractive index, contact angle and spectral transmittance of produced contact lenses were measured. Results: Measurement of the physical properties of the copolymerized material showed that the water content, refractive index, UV-B transmittance and contact angle were in the range of 35.01~38.60%, 1.4350~1.4418, $34.15{\sim}57.25^{\circ}$ and 1.0~10.0%, respectively. Titanium silicon oxide nanoparticles is not used as an additive in the experimental group, the results of the measurement showed that the water content, refractive index, contan angle and UV-B transmittance of the hydrogel lens polymer was 34.00~36.80%, 1.4378~1.4420, $40.15{\sim}60.16^{\circ}$ and 1.8~25.0%, respectively. Conclusions: Also, the transmittance for UV light was reduced significantly in combinations containing titanium oxide nanoparticles.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.240-247
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• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R.F. magnetron sputtering technique. The electrochemical results showed that the irreversible capacity was reduced during the first discharge/charge cycle, because the audition of silicon decreased the oxidic state of Tin. Capacity was increased with the increase of substrate temperature, however decreased with the increase of RTA temperatures. The reversible capacity of thin films fabricated under the substrate temperature of $300^{\circ}C$ and the Ar:$O_2$ratio of 7:3 was 700mA/g.

• Current Optics and Photonics
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• v.6 no.4
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• pp.367-374
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• 2022

A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at -2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 10¹⁰ cmHz^1/2W^-1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.379-384
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• 2015

An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have $Si_3N_4/SiO_2$ membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (${\alpha}-Si$) was verified experimentally in a $8{\times}8$ micro-bolometer array with a $50{\mu}m$ pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in $XeF_2$ gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a $Si_3N_4/SiO_2$ membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the ${\alpha}-Si$ and LSSiN process for a nickel oxide micro-bolometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.67-68
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• 2000

Polycrystalline silicon (poly-Si) thin film transistors (TFT's) employing vertical amorphous silicon (a-Si) offsets have been fabricated without additional photolithography processes. The a-Si offset has been formed utilizing the poly-Si grain growth blocking effect by thin native oxide film during the excimer laser recrystallization of a-Si. The ON current degradation of the new device after 4 hour's electrical stress was reduced by 5 times compared with conventional poly-Si TFT's.