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http://dx.doi.org/10.3807/COPP.2022.6.4.367

Photoresponse Properties of Reduced Graphene Oxide/n-silicon Heterojunction Fabricated by the Vacuum Filtration and Transfer Method  

Du, Yonggang (College of Science, China University of Petroleum East China (UPC))
Qiao, Liangxin (College of Science, China University of Petroleum East China (UPC))
Xue, Dingyuan (College of Science, China University of Petroleum East China (UPC))
Jia, Yulei (College of Science, China University of Petroleum East China (UPC))
Publication Information
Current Optics and Photonics / v.6, no.4, 2022 , pp. 367-374 More about this Journal
Abstract
A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at -2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 1010 cmHz1/2W-1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.
Keywords
Heterojunction; Photocurrent; Photodetectors; Photoresponse; Reduced Graphene Oxide;
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