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http://dx.doi.org/10.3740/MRSK.2002.12.4.240

Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films  

Lee, Sang-Heon (Dept. of Inorganic Mat. Eng., Pusan National University)
Park, Geon-Tae (Dept. of Inorganic Mat. Eng., Pusan National University)
Son, Yeong-Guk (Dept. of Inorganic Mat. Eng., Pusan National University)
Publication Information
Korean Journal of Materials Research / v.12, no.4, 2002 , pp. 240-247 More about this Journal
Abstract
Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R.F. magnetron sputtering technique. The electrochemical results showed that the irreversible capacity was reduced during the first discharge/charge cycle, because the audition of silicon decreased the oxidic state of Tin. Capacity was increased with the increase of substrate temperature, however decreased with the increase of RTA temperatures. The reversible capacity of thin films fabricated under the substrate temperature of $300^{\circ}C$ and the Ar:$O_2$ratio of 7:3 was 700mA/g.
Keywords
$SnO_2$; R.F. magnetron sputtering; Lithium secondary battery;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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