• 전기의세계
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• 제26권5호
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• pp.83-89
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• 1977

This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.

• 한국정밀공학회지
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• 제19권6호
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• pp.145-154
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• 2002

CMP (Chemical mechanical polishing) process was used to control the fine grinding process induced mechanical damage of Cz Silicon wafer. Characterization of mechanical damage was carried out using Nomarski microscope, magic mirror and also using angle lapping and lifetime scanner evaluation after heat treatment. Magic mirror and lifetime scanner were very useful for the residual damage pattern characterization and CMP process was effective on the reduction of fine grinding induced mechanical damage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.152-152
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• 2010

이종접합 태양전지에서 Intrinsic a-Si:H의 역할은 상당히 중요하다. Passivation 효과와 높은 Voc에 이르는 핵심적인 Layer이다. 본 연구는 Intrinsic a-Si:H Layer의 증착조건을 가변하여 최적의 Passivation 효과를 얻는데 목적이 있다. 웨이퍼는 n-Type $500\;{\mu}m$두께에를 사용하였다. Intrinsic a-Si:H Layer는 $SiH_4$ 가스와 $H_2$ 가스를 혼합하여 증착하게 되는데 혼합비는 1:5로 고정하였다. 증착두께는 이종접합 태양전지에서 필요한 5nm로 고정하였으며 증착장비는 PECVD를 이용하였다. PECVD는 VHF(60MHz)를 이용하였고 증착온도는 $200^{\circ}C$로 고정하여 진행하였다. 가변내용은 전극거리와 파워, 압력이다. 전극거리는 20mm에서 80mm까지 가변하였고 압력은 100mTorr에서 500mTorr까지 가변하였다. 파워는 플라즈마의 방정특성을 알아본 후 최소파워를 이용하여 증착하였다. 이는 증착 시 플라즈마에 의한 박막 손상을 최소화하기 위함이다. 측정은 QSSPC 방식으로 Carrier Lifetime과 Implied Voc를 측정하였으며 두께는 Ellipsometry를 이용하여 측정하였다. 전극거리 60mm에서 증착압력은 400mTorr이고 파워는 $14mW/cm^2$에서 가장 높은 Carrier Lifetime 과 Implied Voc를 나타내었다. Carrier Lifetime은 2.2ms이고 Implied Voc는 709mV를 달성 하였다. Carrier Lifetime이 높으면 Surface Recombination이 낮다는 의미이며 이는 고효율 이종접합 태양전지 제작에 있어서 직렬저항을 줄일 수 있는 필수적인 요소이다. Implied Voc는 이종접합 태양전지의 Voc에 직결된 인자로 이종접합 태양전지의 Voc를 예상할 수 있는 중요한 요소이다.

• ETRI Journal
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• 제15권3_4호
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Nuclear Engineering and Technology
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• 제54권2호
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• pp.501-506
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• 2022

Long turn-off time limits high frequency operation of Bipolar Junction Transistors (BJTs). Turn-off time decreases with increases in the recombination rate of minority carriers at switching transients. Fast neutron irradiation on a Si BJT incurs lattice damages owing to the displacement of silicon atoms. The lattice damages increase the recombination rate of injected holes with electrons, and decrease the hole lifetime in the base region of pnp Si BJT. Fast neutrons generated from a beryllium target with 30 MeV protons by an MC-50 cyclotron were irradiated onto pnp Si BJTs in experiment. The experimental results show that the turn-off time, including the storage time and fall time, decreases with increases in fast neutron fluence. Additionally, it is confirmed that the base current increases, and the collector current and base-to-collector current amplification ratio decrease due to fast neutron irradiation.

• Nuclear Engineering and Technology
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• 제54권12호
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• pp.4620-4624
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• 2022

Several cadmium zinc telluride (CZT) crystals were fabricated into radiation detectors using methods that included slicing, dicing, lapping, polishing, and chemical etching. A wet passivation with sodium hypochlorite (NaOCl) was then carried out on the Br-etched detectors. The Te-rich layer on the CZT surface was successfully compensated to the Te oxide layer, which was analyzed with X-ray photoelectron spectroscopy data of both a Br-etched crystal and a passivated CZT crystals. We confirmed that passivation with NaOCl improved the transport property by analyzing the mobility-lifetime product and surface recombination velocity. The electrical and spectroscopic properties of large volume detectors were compared before and after passivation, and then the detectors were observed for a month. Both bar and quasi-hemispherical detectors show an enhancement in performance after passivation. Thus, we could identify the effect of NaOCl passivation on large volume CZT detectors.

• 대한방사선기술학회지:방사선기술과학
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• 제28권4호
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• pp.267-272
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• 2005

moving photocarrier grating 기술을 이용하여 디지털 X-선 변환물질 a-Se:As 필름에서 As 첨가효과에 관하여 연구하였다. 이 방법은 시료를 조사하기 위하여 주파수를 변화시킨 2개 레이저 빔의 중첩으로 얻어진 움직이는 간섭패턴을 이용한다. 시료의 수송변수는 시료에서 변조 방향으로 유도되는 grating-속도에 의존하는 전류밀도로부터 얻어진다. As 첨가에 따른 a-Se 필름의 전자와 정공 이동도 그리고 재결합 수명을 구하였다. 전자의 이동도는 결함 상태 때문에 As 첨가에 따라 감소하는 반면, 특히 a-Se 필름에 0.3% As 첨가할 때 정공 이동도와 재결합 수명이 증가하였다. MPG 기술로 얻은 As가 첨가된 a-Se 필름의 수송성질을 a-Se:As로 제작한 X-선 디텍터의 X-선 감도와 비교하였다. 실험결과 0.3% As가 첨가된 a-Se으로 제작한 X-선 디텍터가 가장 우수한 X-선 감도를 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.121-125
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square- and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.19-23
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.