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http://dx.doi.org/10.4313/TEEM.2003.4.5.019

Time-Resolved Photoluminescence Measurement of Frenkel-type Excitonic Lifetimes in InGaN/GaN Multi-quantum Well Structures  

Shin, Gwi-Su (Department of Mechanical Engineering, Chonbuk National University)
Hwang, Sung-Won (Department of Mechanical Engineering, Chonbuk National University)
Kim, Keun-Joo (Department of Mechanical Engineering, Chonbuk National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.4, no.5, 2003 , pp. 19-23 More about this Journal
Abstract
Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.
Keywords
Oscillator strength; InGaN/GaN; Quantum well; Photoluminescence;
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