• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권4호
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• pp.176-181
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• 2001

As the data rate between chip-to-chip gets high, the skin effect and load of pins deteriorate noise margin. With these, noise disturbances on the bus channel make it difficult for receiver circuits to read the data signal. This paper has proposed a new pre-emphasis driver circuit which achieves wide noise margin by enlarging the signal voltage range during data transition. When data is transferred from a memory chip to a controller, the output boltage of the driver circuit reaches the final values through the intermediate voltage level. The proposed driver supplies more currents applicable to a packet-based memory system, because it needs no additional control signal and realizes very small area. The circuit has been designed in a 0.18 ${\mu}m$ CMOS process, and HSPICE simulation results have shown that the data rate of 1.32 Gbps be achieved. Due to its result, the proposed driver can achieved higher speed than conventional driver by 10%.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.76-78
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• 2003

We have designed and tested an RSFQ (Rapid Single Flux Quantum) NDRO (Non Destructive Read Out) circuit for the development of a high speed superconducting ALU (Arithmetic Logic Unit). When designing the NDRO circuit, we used Julia, XIC and Lmeter for the circuit simulations and layouts. We obtained the simulation margins of larger than $\pm$25％. For the tests of NDRO operations, we attached the three DC/SFQ circuits and two SFQ/DC circuits to the NDRO circuit. In tests, we used an input frequency of 1 KHz to generate SFQ Pulses from DC/SFQ circuit. We measured the operation bias margin of NDRO to be $\pm$15％. The circuit was measured at the liquid helium temperature.

• 전기전자학회논문지
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• 제17권3호
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• pp.260-266
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• 2013

DRAM 에서 folded bit line 대비 open bit line은 데이터 read나 write 동작시 노이즈(noise)에 취약하다. 6F2(F: Feature Size) 구조의 open bit line에서 DRAM 집적도 증가에 따라 코어(core) 회로부 동작 조건은 노이즈로부터 더욱 악화된다. 본 논문에서는 비트라인(bit line) 간 데이터 패턴의 상호 간섭 영향을 분석하여, 기존의 연구에서는 다루지 않았던 open bit line 방식에서 데이터 패턴 상호 간섭의 취약성을 실험적 방법으로 확인하였으며, 68nm Tech. 1Gb DDR2에서 Advan Test장비를 사용하여 실험하였다. 또한 open bit line 설계 방식에서 노이즈 영향이 DRAM 동작 파라미터(parameter) 특성 열화로 나타나는데, 이를 개선 할 수 있는 방법을 센스앰프 전원분리 실험으로 고찰하였다. 센스앰프 전원분리시 0.2ns(1.3%)~1.9ns(12.7%) 이상 개선될 수 있음을 68nm Tech. 1Gb DDR2 modeling으로 시뮬레이션 하였다.

• Restorative Dentistry and Endodontics
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• 제14권2호
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• pp.5-19
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• 1989

The purpose of this study was to observe the microleakage of composite resin filling using several glass ionomer cements. The Class V cavities of eighty noncarious human molars were prepared at the cementoenamel juction on the facial and lingual surfaces of each tooth with a No.330 carbide bur in a high speed handpiece. The cavity dimensions were $3.0{\pm}0.5mm$ wide, $2.0{\pm}0.5mm$ high, and $1.5{\pm}0.5mm$ deep and all enamel cavosurface margins were beveled with a No.558 carbide bur in low speed handpiece. The bevel was approximately $45^{\circ}$ and 0.5-1.0mm in width. A total of the 160 cavities was divided into four groups, and then 144 cavities among them were three experimental groups and remaining sixteen cavities were control group. All of the prepared cavities were restored as follows: group 1 : Preparations were restored with there three glass ionomer cements. group 2 : Preparations were restored with a composite resin with three glass ionomer cement bases placed $0.2{\pm}0.1mm$ short of the cavosurface margin. group 3 : Preparations were restored with a composite resin with three glass ionomer cement bases extened to the cavosurface margin. group 4 : As control group, preparations were restored with a composite resin, PALFIQUE. The specimens were then thermocycled in a range of $6^{\circ}C-60^{\circ}C$ and immersed in a bath of 2.0% aqueous basic fuchsin solution for 24 hours. Dye penetration was read on a scale of 0 to 4 by Tani and Buonocore's method. The following conclusions were derived from the results obtained; 1. All groups showed significantly more leakage at the gingival margins than at the occlusal margins(p<0.0005). 2. At the gingival margins, group 1 showed less leakage than group 3(p<0.01) and group 4(p<0.0005), while group 3 exhibited less leakage than group 2(p<0.01) and group 4(p<0.0005). 3. At the occlusal margins, group 4 showed less leakage than group 3(p<0.1) and group 1(p<0.005), while group 3 exhibited less leakage than group 2(p>0.1) and group 1(p<0.025).

• 대한기계학회논문집
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• 제7권1호
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• pp.1-10
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• 1983

The photoelastic determination of S.I.F. in Fracture mechanics has been regarded as one of the most effective and practical experimental methods in which stresses are read directly, except a few shortcomings involved in the process of experiment; the difficulties of making a sharp crack tip similar to the practical one and nearly impossibilities of carving an arbitrarily shaped crack on the test plate, etc. To eliminate flaws mentioned above, recently, Kitagawa and Watanabe of Tokyo Univ.developed a new method named"Teflon Insert Method". which has improved experimental accuracy to a considerable extent byt remaining still room for further improvement, that is, the elimination of bonding boundary scars which render photoelastic fringes obscure. In this paper, a newly exploited"Teflon Molding Method" was attempted for the completion of teflon-epoxy experimental method. The experimental results obtained by this method are compared with existent theoretical and experimental values to evaluate its accuracy. As result, 1-6% of margin of errors were appeared in a series of photoelastic experiments which defied any other conventional method in terms of experimental accuracy.perimental accuracy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.32-33
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• 2006

As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2007년도 하계종합학술대회 논문집
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• pp.341-342
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• 2007

The IRFPA (InfraRed Focal Plane Array) ROIC (ReadOut Integrated Circuit) was designed in folded-cascode Op-Amp using $0.35{\mu}m$ CMOS technology. As the folded-cascode has high open-loop voltage gain and fast settling time, that used in many analog circuit designs. In this paper, folded-cascode Op-Amp for ROIC of the $32{\times}32$ IRFPA has been designed. HSPICE simulation results are unit gain bandwidth of 13.0MHz, 90.6 dB open loop gain, 8 V/${\mu}m$ slew rate, 600 ns settling time and $66^{\circ}$ phase margin.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1426-1427
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• 2006

Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1329-1330
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• 2007

Phase-change random access memory(PRAM) has many advantages compare with the existing memory. For example, fast programming speed, low programming voltage, high sensing margin, low power consume and long cyclability of read/write. Though it has many advantages, there are some points which must be improved. So, we invented and studied new constitution of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. In this paper, we studied in order to make set operation time and reset operation voltage reduced. In the present work, by alloying Sb in $Ge_{1}Se_{1}Te_{2}$. we could confirm that improved its set operation time and reset operation voltage. As a result, the method of Sb-alloyed $Ge_{1}Se_{1}Te_{2}$ can be solution to decrease the set operation time and reset operation voltage.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 춘계학술대회논문집
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• pp.694-699
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• 2002

As the demand for slim laptops requires ion'-height optical disc drives, vibration problems of optical disc drives are of great concern. Additionally, with the decrease of a track width and a depth of focus in high density drives, studies on vibration resonance between mechanical parts become more important. From the vibration point of view, the performance of optical disc drives is closely related with the relative displacement between a disc and an objective lens which is controlled by servo mechanism. In other words, to read and write data properly, the relative displacement between an optical disc and an objective lens should be within a certain limit. The relative displacement is dependent on not only an anti-vibration mechanism design but also servo control capability. Good servo controls can make compensation for poor mechanisms, and vice versa. In a usual development process, robustness of the anti-vibration mechanism is always verified with the servo control of an objective lens. Engineers partially modify servo gain margin in case of a data reading error. This modification cannot correct the data reading error occasionally and the mechanism should be redesigned more robustly. Therefore it is necessary to verify a mechanism with respect to the possible servo gain plot. In this study we propose the experimental verification method far anti-vibration mechanism with respect to the existing servo gain plot. This method verifies axial vibration characteristics of optical disc drives on the basis of transmissibility. Using this method, we verified our mechanism and modified the mechanism for better anti-vibration characteristics.