• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.166-168
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• 1996

This paper presents an power system optimization method which solves real and reactive power dispatch problems using evolutionary computation such as genetic algorithms(GAs), evolutionary programming(EP), and evolution strategy(ES). Many conventional methods to this problem have been proposed in the past, but most these approaches have the common defect of being caught to a local minimum solution. Recently, global search methods such as GAs, EP, and ES are introduced. The proposed methods, applied to the IEEE 30-bus system, were run for 12 other exogenous parameters. Each simulation result, by which evolutionary computations are compared and analyzed, shows the possibility of applications of evolutionary computation to large scale power systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.824-827
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• 2000

Fabrication of InP-based photonic devices by dry etch Process is important for clear formation of waveguide mesa structure. We have developed more efficient etch process of the inductively coupled plasma (ICP) with low damages and less polymeric deposits for the InP-based photonic devices than the reactive ion etching (RIE) technique. We report the tendency of etch rate variation by the process parameters of the RF power, pressure, gas flow rate, and the gas mixing ratio. The surface roughness of InP-based waveguide structure was more improved by the light wet etching in the mixed solution of H$_2$SO$_4$:H$_2$O (1:1)

• Bulletin of the Korean Chemical Society
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• v.21 no.11
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• pp.1095-1100
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• 2000

we have proposed a three-dimensional GLE approach to gas-surface reactive scattering, model H + H $${\rightarrow}$H_2/Si(100)-(2$ ${\times}$1) system, and the implementation of 3D GLE method on the hydrogen on silicon surface has been presented. The formalism and algori thm of the 3D GLE are worked properly in the reactive scattering system. The calculated normal mode frequencies of surface vibrations were almost identical to previous harmonic slab calculations. The reaction probabilities were calculated for two energies. The calculations show that a very large amount of energy is transferred in surface in low energy scattering. Three different types of reaction mechanisms has been observed, which can not be shown in flat and rigid surface models. Further work on the reaction mechanisms and calculations of the vibrational and rotation distributions of products is in progress. The results will be reported elsewhere soon.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.49.2-49.2
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• 2010

Copper oxide films have been deposited on silicon substrates by direct current magnetron sputtering of Cu in O2 / Ar gas mixtures. The target oxidation occurring as a result of either adsorption or ion-plating of reactive gases to the target has a direct effect on the discharge current and the resulting composition of the deposited films. The kinetic model which relates the target oxidation to the discharge current was proposed, showing the one-to-one relationship between discharge current characteristics and film stoichiometry of the deposited films.

• Nuclear Engineering and Technology
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• v.44 no.1
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• pp.21-32
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• 2012

Fluorinated compounds mainly used in the semiconductor industry are potent greenhouse gases. Recently, thermal plasma gas scrubbers have been gradually replacing conventional burn-wet type gas scrubbers which are based on the combustion of fossil fuels because high conversion efficiency and control of byproduct generation are achievable in chemically reactive high temperature thermal plasma. Chemical equilibrium composition at high temperature and numerical analysis on a complex thermal flow in the thermal plasma decomposition system are used to predict the process of thermal decomposition of fluorinated gas. In order to increase economic feasibility of the thermal plasma decomposition process, increase of thermal efficiency of the plasma torch and enhancement of gas mixing between the thermal plasma jet and waste gas are discussed. In addition, noble thermal plasma systems to be applied in the thermal plasma gas treatment are introduced in the present paper.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.090-91
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• 1995

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.229-229
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.94-94
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.156-156
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.91-91
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• 2009

In the past decade, Pd based thin films have been studied far hydrogen gas sensors due to their high possibility for energy industry and environmental applications. In this work, we report a navel method to fabricate highly sensitive hydrogen gas sensors based on PdO thin films. The films were deposited on Si substrates in Ar and $O_2$ ambient using reactive sputtering system. A semiconductor process has been utilized to fabricate PdO films with t=40nm. We observed the resistance changes of the PdO films with various $H_2$ concentrations. It was found that the electrical properties of the thin films depend on the composition of oxygen. The sensitivity is defined as $S\;=\;(R_0-R)/R{\times}100%$, where R and $R_0$ are the resistances in the presence of exposing the hydrogen gas and air, respectively. The sensitivity of the thin films was found to be as high as about 95%. After exposing to hydrogen gas, we discovered that the nano-sized cracks formed on the surface of the PdO thin films. The nano-cracks formed in deoxidized PdO thin films were known by playing a key role to reduce more than 4 times the response time of absorption. Our results illustrate that the deoxidized PdO thin films can be used as hydrogen sensors.