• 제목/요약/키워드: Reactive Material

검색결과 704건 처리시간 0.028초

자장 강화 반응성 이온 식각 장비를 이용한 몰리브덴 박막의 식각 특성 연구 (A Study on Etching Characteristics of Molybdenum Thin Films by Magnetically Enhanced Reactive lon Etching System)

  • 김남훈;권광호;김창일;장의구
    • 한국전기전자재료학회논문지
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    • 제13권1호
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    • pp.6-12
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    • 2000
  • In this study, molybdenum thin films were etched with Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio in an magneti-cally enhanced reactive ion etching(MERIE) by the etching parameters such as rf power of 250 watts, chamber pressure of 100 mTorr and B-field of 30 gauss. The etch rate was 150nm/min under Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO\ulcorner, photoresist were respectively 0.94, 0.05. The surface reaction of the etched Mo thin films was investigated with X-ray photoelectron spectroscopy(XPS). It was analyzed that Mo peaks was mainly observed in Mo-O bonds formed MoO\ulcorner compounds and F was detected in Mo-F and O-F bonds. Cl peaks were detected by the peak of Cl 2p\ulcorner in Cl-Mo bonds of MoCl\ulcorner or MoO\ulcornerCl\ulcorner formulas. Almost all of both Cl and S atoms had been com-bined with Mo, respectively.

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[ ${\beta}-cyclodextrin$ ] inclusion properties with guest molecules using hetero-bi-functional reactive dye

  • Kim, Byung-Soon;Kim, Young-Sung;Son, Young-A
    • 한국염색가공학회지
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    • 제19권2호
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    • pp.32-35
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    • 2007
  • Cyclodextrin is a cyclic oligosaccharid material which shows an ability to incorporate organic guest molecules inside their cavity area. Thus, this ${\beta}-cyclodextrin$ treatment on fiber substrates may provide the changed surface characteristics of the substrates such as solubility, chemical reactivity and spectral property. In this context, the aim of this present work is to make a bridge connection using hetero-bi-functional reactive dye between fiber substrates and ${\beta}-cyclodextrin$. In addition, the corresponding Berberine inclusion behaviors into the inner cavity of ${\beta}-cyclodextrin$ was examined. The %exhaustion of Berberine inclusion as a guest molecule within the ${\beta}-cyclodextrin$ was measured using UV-Vis spectrophotometer. The findings showed that the %exhaustion of Berberine inclusion increased with increasing the prepared dye bridge compound and ${\beta}-cyclodextrin$ host material.

반응성 RF 마그네트론 스퍼터링 법을 이용한 AIN/SiC 구조의 제작 및 특성 (Fabrication and Properties of AIN/SiC Structures using Reactive RF Magnetron Sputtering Method)

  • 김용성;김광호
    • 한국전기전자재료학회논문지
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    • 제18권11호
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    • pp.977-982
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    • 2005
  • Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

반응성 이온 건식식각에서 RF Power 변화에 따른 표면 조직화 개선 연구 (Study on Improving Surface Structure with Changing RF Power Conditions in RIE (reactive ion etching))

  • 박석기;이정인;강민구;강기환;송희은;장효식
    • 한국전기전자재료학회논문지
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    • 제29권8호
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    • pp.455-460
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    • 2016
  • A textured front surface is required in high efficiency silicon solar cells to reduce reflectance and to improve light trapping. Wet etching with alkaline solution is usually applied for mono crystalline silicon solar cells. However, alkali texturing method is not appropriate for multi-crystalline silicon wafers due to grain boundary of random crystallographic orientation. Accordingly, acid texturing method is generally used for multi-crystalline silicon wafers to reduce the surface reflectance. To reduce reflectivity of multi-crystalline silicon wafers, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE condition by different RF power condition (100, 150, 200, 250, 300 W).

Reactive Ion Etching에서 Optical Emission Spectroscopy의 투과율과 강도를 이용한 에러 감지 기술 제안 (Relative Transmittance and Emission Intensity of Optical Emission Spectroscopy for Fault Detection Application of Reactive Ion Etching)

  • 박진수;문세영;조일환;홍상진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.473-474
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    • 2008
  • This paper proposes that the relative transmittance and emission intensity measured via optical emission spectroscopy (OES) is a useful for fault detection of reactive ion etch process. With the increased requests for non-invasive as well as real-time plasma process monitoring for fault detection and classification (FDC), OES is suggested as a useful diagnostic tool that satisfies both of the requirements. Relative optical transmittance and emission intensity of oxygen plasma acquired from various process conditions are directly compared with the process variables, such as RF power, oxygen flow and chamber pressure. The changes of RF power and Pressure are linearly proportional to the emission intensity while the change of gas flow can be detected with the relative transmittance.

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Chemical Mechanical Polishing 공정에 관한 원자단위 반응 모델링 (Atomic Scale Modeling of Chemical Mechanical Polishing Process)

  • 변기량;강정원;송기오;황호정
    • 한국전기전자재료학회논문지
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    • 제18권5호
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    • pp.414-422
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    • 2005
  • This paper shows the results of atomistic modeling for the Interaction between spherical nano abrasive and substrate In chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-jones 12-6 potentials. We proposed and investigated three mechanical models: (1) Constant Force Model; (2) Constant Depth Model, (3) Variable Force Model, and three chemical models, such as (1) Chemically Reactive Surface Model, (2) Chemically Passivating Surface Model, and (3) Chemically Passivating-reactive Surface Model. From the results obtained from classical molecular dynamics simulations for these models, we concluded that atomistic chemical mechanical polishing model based on both Variable Force Model and Chemically Passivating-reactive Surface Model were the most suitable for realistic simulation of chemical mechanical polishing in the atomic scale. The proposed model can be extended to investigate the 3-dimensional chemical mechanical polishing processes in the atomic scale.

Si(100)기판위에 성장된 3C-SiC 박막의 반응성 이온식각 특성 (Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers)

  • 정귀상;정수용
    • 한국전기전자재료학회논문지
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    • 제17권7호
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    • pp.724-728
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    • 2004
  • This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.

마그네트론 RIE를 이용한 다결정 3C-SiC의 식각 특성 (Etching Characteristics of Polyctystalline 3C-SiC Thin Films by Magnetron Reactive Ion Etching)

  • 온창민;김귀열;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.331-332
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    • 2007
  • Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

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Static buckling analysis of bi-directional functionally graded sandwich (BFGSW) beams with two different boundary conditions

  • Berkia, Abdelhak;Benguediab, Soumia;Menasria, Abderrahmane;Bouhadra, Abdelhakim;Bourada, Fouad;Mamen, Belgacem;Tounsi, Abdelouahed;Benrahou, Kouider Halim;Benguediab, Mohamed;Hussain, Muzamal
    • Steel and Composite Structures
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    • 제44권4호
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    • pp.503-517
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    • 2022
  • This paper presents the mechanical buckling of bi-directional functionally graded sandwich beams (BFGSW) with various boundary conditions employing a quasi-3D beam theory, including an integral term in the displacement field, which reduces the number of unknowns and governing equations. The beams are composed of three layers. The core is made from two constituents and varies across the thickness; however, the covering layers of the beams are made of bidirectional functionally graded material (BFGSW) and vary smoothly along the beam length and thickness directions. The power gradation model is considered to estimate the variation of material properties. The used formulation reflects the transverse shear effect and uses only three variables without including the correction factor used in the first shear deformation theory (FSDT) proposed by Timoshenko. The principle of virtual forces is used to obtain stability equations. Moreover, the impacts of the control of the power-law index, layer thickness ratio, length-to-depth ratio, and boundary conditions on buckling response are demonstrated. Our contribution in the present work is applying an analytical solution to investigate the stability behavior of bidirectional FG sandwich beams under various boundary conditions.

반응성구조체의 고속충돌에 따른 온도분포 분석 (Analysis on Temperature Profiles upon High Speed Impact of Reactive Structural Materials)

  • 정상현;조수경;배광태;이기봉
    • 한국군사과학기술학회지
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    • 제20권5호
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    • pp.654-664
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    • 2017
  • The temperature profiles upon high speed impact of reactive structural materials were analyzed. A two color pyrometer, which included high-speed camera, spectral splitter, and band pass filters, was utilized to measure transient temperature profiles during and after reactive metal samples impacted into steel plate with velocities of 1600~1700 m/s. The spatial temperature distribution was analyzed from the ratio of spectral radiances at two different wavelength in infrared zone, i.e. 700 and 900 nm. The measured temperatures were calibrated with black body source. Two different types of metal samples, namely aluminum and nickel, were employed to understand reaction behavior upon the impact of samples in ambient condition. According to our experiments, the Ni sample appeared to barely react with ambient air producing an instant small fireball, while Al sample reacts violently with air generating a relatively prolong fireball.