• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.252-255
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• 1996

Cl-based gas chemistry is generally used to etching for Al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with $H_2O$ due to air exposure and results in Al corrosion. In this study, the corrosion Phenomena of Al were examined with XPS(X-ray photoelectron spectroscopy) and SEF(Scanning electron microscopy). It was confirmed that chlorine mainly existed at the grain boundary of Al alloy after plasma etching of Al alloy with Cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al a1loy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.e.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.519-521
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• 2000

The application of low dieletric constant material instead of $SiO_2$ has been considered to reduce interconnection delay, crosstalk, power exhaustion. Methylsilsesquioxane (MSSQ) have a dieletric constant less than k>3 which is lower than that for the convention $SiO_2$ insulator ($k{\sim}4$). The Propose of this study is to know etching rate of MSSQ. Expermentation in this paper use RIE(Reactive ion Etching) and centre) flow rate of $CF_4/O_2$ gas, RF power.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.338-341
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• 1995

The surface properties after plasma etching of Al(Si, Cu) solutions using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched Al(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxized (partially chlorinated) states, copper shows Cu metallic states and Cu-Clx(x$CuCl_x$ (x$CuCl_x$ (1

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8679-8683
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• 2015

Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.40-40
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• 2000

직접 회로의 소자크기가 더욱 미세화에 따라, 기존에 사용하는 금속 배선의 저항과 금속 배선과 층간 유전 물질에 의한 정전용량의 증가로 인한 시간 지연 (RC time delay) 문제가 크게 대두되고 있다. 이 문제를 해결하기 위해 비유전율이 낮은 물질을 층간 유전체로 사용하여 정전용량을 낮추는 것이 필요하다. 기존의 실리콘 산호막 대신에 MSSQ(methylsilsequioxance)를 이용할 때 필요한 건식 식각 공정을 연구하였다. MSSQ 물질을 patterning 하기 위해 습식 공정의 부산물인 폐액 등의 문제점이 발생하지 않을 뿐만 아니라, 소자의 손상이 적고 선택비가 높으며, 식각의 이방성을 향상시킬 수 있는 장점을 갖고 있는 반응 이온 식각기(reactive ion etchin)을 이용하였다. CF4/O2 plasma를 사용하였는데, 가스의 양의 flow rate와 조성비, RF pover(50, 100, 150 W)등의 변화에 따른 식각 특성을 알아보았다. atep, SEM, AFM등을 이용하여 측정·분석하였다.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.179-183
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• 2000

The reactive ion etching process of GaN using $BCI_3/H_2/Ar$ high density inductively coupled plasma was investigated. Results showed that both of the etch rate and the sidewall verticality significantly increased as the ICP power, bias voltage, and the $BCI_3$ ratio were increased whereas effects of the other variables were minimal. The maximum etch rate of about 175nm/min was obtained at the condition of ICP power 900W, bias voltage 400V, 4mTorr, and 60% $BCI_3$, which resulted in reasonably smooth etched surface. Etch residues were observed in the case of samples etched at the low bias conditions, which were proposed to be as the $GaCI_x$ compounds.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.26-33
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• 1999

In order to examine the effect of beam location n the performance of bridge type piozoresistive silicon accelerometer, three sensors having different location of beams were simulated by FEN(finite element method) and fabricated by RIE(reactive ion etching) and KOH etching method using SDB(silicon direct bonding) wafer, Results of the FEM simulation present that the 1st resonace frequency and Z axis sensitivity of each sensor are identical but the 2nd, and the 3rd resonace frequency and X, Y axis sensitivity are different. Even though the 1st resonance frequency and Z axis sensitivity measured from fabricated sensors do not perfectly coincide with each other, all 3 type sensors present 180 ~ 220N/G of Z sensitivity at 5 V supply voltage and 1.3 ~ 1.7kHz of the 1st resonance frequency and about 2% of lateral sensitivity.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.120-126
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• 2004

A damage-reduced trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy, which was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $O_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching. To reduce the RIE induced damage and obtain the fine shape trench corner rounding, we investigated the hydrogen annealing effect after trench formation. Silicon atomic migration on trench surfaces using high temperature hydrogen annealing was observed with atomic scale view. Migrated atoms on crystal surfaces formed specific crystal planes such as (111), (113) low index planes, instead of fully rounded comers to reduce the overall surface energy. We could observe the buildup of migrated atoms against the oxide mask, which originated from the surface migration of silicon atoms. Using this hydrogen annealing, more uniform thermal oxide could be grown on trench surfaces, suitable for the improvement of oxide breakdown.