Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Low dielectric material etching technology for Cu interconnection

Plasma를 이용한 구리배선용 저유전 물질의 etching에 대한 연구

  • Lee, Kil-Hun (Dept. of Electrical and Control Engineering, Hongik Univ.) ;
  • Jung, Do-Hyun (Dept. of Electrical and Control Engineering, Hongik Univ.) ;
  • Choi, Jong-Sun (Dept. of Electrical and Control Engineering, Hongik Univ.)
  • 이길헌 (홍익대학교 전기제어공학과) ;
  • 정도현 (홍익대학교 전기제어공학과) ;
  • 최종선 (홍익대학교 전기제어공학과)
  • Published : 2000.11.25
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Abstract

The application of low dieletric constant material instead of $SiO_2$ has been considered to reduce interconnection delay, crosstalk, power exhaustion. Methylsilsesquioxane (MSSQ) have a dieletric constant less than k>3 which is lower than that for the convention $SiO_2$ insulator ($k{\sim}4$). The Propose of this study is to know etching rate of MSSQ. Expermentation in this paper use RIE(Reactive ion Etching) and centre) flow rate of $CF_4/O_2$ gas, RF power.

Keywords