• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1762-1764
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• 1999

We investigated the annealing effect on generating pretilt angle and aligning liquid crystal (LC) using the photo-depolymerization reaction in this study. In case of rubbing polyimide (PI) surface with the side chain, pretilt angle tends to increase with increasing the annealing time. It is considered because the steric interaction is increased by annealing which cause the side chain to come back to original position. For obliquely irradiating ultraviolet (UV) light on PI surface, pretilt angle shows to $0^{\circ}$ and is increased by annealing. The pretilt angle in rubbed PI surface is much higher than in photo-aligned PI surface. It is attributed to the steric interaction and the number of LC molecular arrangement on azimuthal direction. In addition. in case of obliquely irradiating UV light on PI surface. it showed LC alignment to increase by annealing. It can be regarded due to the fact that the re-alignment of LC molecule is improved to residual polymer direction by annealing.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.667-670
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• 2005

Binary skutterudite $CoSb_3$ compounds were prepared by the arc melting and hot pressing processes and their thermoelectric properties were investigated in the range from 300 to 600 K. Annealing effect was correlated to phase transformation and homogenization. Thermoelectric properties of the arc-melted and hot-pressed $CoSb_3$ were discussed and compared. Undoped intrinsic $CoSb_3$ prepared by the arc melting showed p-type conduction, while it showed metallic behavior with increasing measuring temperature. However, hot pressed specimens showed n-type conduction, possibly due to Sb evaporation. Thermoelectric properties were remarkably improved by annealing In vacuum and they were closely related to phase transformation.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.3
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• pp.144-149
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• 2008

It has been reported that copper and copper alloys have a large anisotropy of functional properties such as electrical, thermal and mechanical properties, which means that the texture of polycrystalline alloy should be considered to achieve better properties. In this study, the determination of grain growth orientation and texture formation in the cold-rolled, heat-treated and Ni-plated hybrid copper sheets was investigated. Grain growth direction and texture formation were analyzed by the X-ray pole figure. The influence of texture on the mechanical properties could be quantitatively confirmed by the results from the orientation distribution function and the tensile test. The heat-treated texture in the cold-rolled hybrid copper sheet is also investigated and discussed.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.66-70
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• 2004

The Sr$\_$0.7/Bi$\_$2.3/Ta$_2$O$\_$9/(SBT)thin films are deposited on Pt-coated electrode (Pt/TiO$_2$/SiO$_2$/Si) using a RE magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing times were studied. As a result of conducting the X-ray diffraction analysis and the electron microscopy analysis, the perovskite phase began to grow from 10 minutes after annealing the specimen, and excellent crystallization was accomplished at 60 minutes after annealing the specimen. The remanet polarization (2P$\_$r/) value and the coercive electric field (E$\_$c/) of the SBT thin film specimen showed the most excellent characteristics at 60 minutes after annealing the specimen, which were approximately 12.40 C/$\textrm{cm}^2$ and 30 kV/cm, respectively. The leakage current density of the SBT thin film specimen as annealed for 60 minutes was approximately 2.81${\times}$10$\^$－9/A/$\textrm{cm}^2$.

• Nuclear Engineering and Technology
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• v.54 no.8
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• pp.2801-2808
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• 2022

The synergistic effect of ZrC nanoparticle pining and Re solution in W matrix on the thermal stability of tungsten was studied by investigating the evolution of the microstructure, hardness and tensile properties after annealing in a temperature range of 1000-1700 ℃. The results of metallography, electron backscatter diffraction pattern and Vickers micro-hardness indicate that the rolled W-1wt%Re-0.5 wt% ZrC alloy has a higher recrystallization temperature (1600 ℃-1700 ℃) than that of the rolled pure W (1200 ℃), W-0.5 wt%ZrC (1300 ℃), W-0.5 wt%HfC (1400-1500 ℃) and W-K-3wt%Re alloy fabricated by the same technology. The molecular dynamics simulation results indicated that solution Re atoms in W matrix can slow down the self-diffusion of W atoms and form dragging effect to delay the growth of W grain, moreover, the diffusion coefficient decrease with increasing Re content. In addition, the ZrC nanoparticles can pin the grain boundaries and dislocations effectively, preventing the recrystallization. Therefore, synergistic effect of solid solution Re element and dispersed ZrC nanoparticles significantly increase recrystallization temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.469-470
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• 2006

The purpose of this research was to investigate and to find out the optimal annealing condition to mold an aspheric glass to be used for mobile phone module having 2 megapixel and $2.5{\times}$ zoom. Taking annealing rate and re-press temperature after molding as molding variables under the identical molding temperature and pressure, a glass lens was molded. And, Form Accuracy, Lens Thickness, Refractive Index, and Modulation Transfer Function(MTF) were measured in order to observe characteristics of molded lens, and then optimal annealing conditions were determined based on the resulting data. Properties of lens molded under the optimal conditions revealed Form Accuracy[PV] $0.2047\;{\mu}m$ in aspheric surface, and $0.2229\;{\mu}m$ in plane, and MTF value was 30.3 % under 80 lp/mm.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.412-415
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• 2006

Te-doped $CoSb_3$ was prepared by the encapsulated induction melting, and its doping effects on the thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by the subsequent annealing at 773 K for 24 hrs. Tellurium atoms acted as electron donors by substituting antimony atoms. Thermoelectric properties were remarkably improved by the appropriate doping. Dimensionless figure of merit was obtained to be 0.83 at 700K for the $CoSb_{2.8}Te_{0.2}$ specimen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.42-47
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• 2000

The surface structure and the crystalline features in the near surface region have been investigated for CZ(Czochralski) grown Si wafers. Si wafers were annealed by RTA (Rapid Thermal Annealing) method in H$_2$ambient after mirror polished process. The densities of COPs (Crystal Originated Particles) after RTA process were remarkably decreased at the surface and in the region of 5um depth from the surface as well. terrace type surface structure which was formed by etching and re-arrangement of Si atoms during $H_2$annealing process also has been observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.665-666
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• 2006

Undoped $CoSb_3$ powders were synthesized by mechanical alloying (MA) of elemental powders using a nominal stoichiometric composition. Nano-structured, single-phase skutterudite $CoSb_3$ was successfully produced by vacuum hot pressing (VHP) using MA powders without subsequent annealing. Phase transformations during synthesis were investigated using XRD, and microstructure was observed using SEM and TEM. Thermoelectric properties in terms of Seebeck coefficient, electrical conductivity, thermal conductivity and figure of merit(ZT) were systematically measured and compared with the results of analogous studies. Lattice thermal conductivity was reduced owing to increasing phone scattering in nano-structured MA $CoSb_3$, leading to enhancement in the thermoelectric figure of merit. MA associated with VHP technique offers an alternative potential processing route for the process of skutterudite.