• Proceedings of the IEEK Conference
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.5-8
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• 2001

This paper describes the development of SiC MOSFET model for high temperature applications. The temperature dependence of the threshold voltage and mobility of SiC MOSFET is quite different from that of silicon MOSFET. We developed the empirical temperature model of threshold voltage and mobility of SiC MOSFET and implemented into HSPICE. Using this model the MOSFET Id-Vds characteristics as a function of temperature are simillated. Also the SiC CMOS operational amplifieris designed using this model and the temperature dependence of the frequency response, transfer characteristics and slew rate as a function of temperature are analyzed.

• Journal of Magnetics
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• 제20권3호
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• pp.290-294
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• 2015

To investigate the effects of alternating magnetic field intensity and stimulation time on the proliferation of human breast cancer cells (BT-20), we cultured the cells under a magnetic field with a saw tooth waveform of 2 kHz. The field intensities varied from 3 to 7 mT, and the stimulation time varied from 24 to 72 hours. Cell proliferation decreased dramatically to 40% during magnetic stimulation for 72 hours at 5 mT. However, the cells were not affected by a strong magnetic field of 7 mT. The p-values obtained using statistical package for social science software were below 0.05 for 5-7 mT. This means that the results have statistical significance. However, it is difficult to explain our results based on the physiology of cell membranes, which have various ionic flows at ion channels.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.121-124
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• 2000

The time dependence of irreversible magnetization of grain aligned infinite layer superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ was measured in temperature range of 2 K < T < 30 K for H= 0.5 T, 1.0 T and 1.5 T parallel to c-axis. From this, we calculated normalized flux creep rate S(T) ${\equiv}$ dlnM/dlnt and found that the temperature independent region in S(T) is significantly wide in comparision with other cuprate superconductors. Using the method of Maley et al., we also deduce the current density dependence of pinning potential and glassy exponent ${\mu}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제13권1호
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.94-97
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• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

• The Korean Journal of Ceramics
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• 제1권4호
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• pp.197-203
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• 1995

Nearly fully dense PZT samples both with tetragonal and with morphotropic phase boundary compositions were prepared by the conventional powder processing and sintering. A micro-indentation technique was used to evaluate the dependence of fracture toughness on remanent polarization, crack length and the direction of crack propagation. The result shows that the toughness increases with the remanent polarization along the poling direction and decreases in the transverse direction. The dependence of toughness on the remanent polarization is neither symmetric nor linear but rather shown to be saturated quickly with the increase in remanent polariztion. R-curve behaviors are observed in both poled and unpoled samples. Sequential SEM and XRD studies on annealed, poled, ground, fractured and etched samples show that domain switching is evident as a viable toughening mechanism but might depend upon the rate of crack propagation. Grain bridging is also observed as one of the active toughening mechanisms.

• Journal of Korean Association for Spatial Structures
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• 제4권1호
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• pp.61-68
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• 2004

The wind tracker and structural monitoring system recorded wind and dynamic response data. The measured building is located in the moutatin in Sokcho. The damping ratio and natural frequency were analysed in this paper to obtain amplitude dependence. Amplitude dependent damping was showed clearly in the increasing rate of 9%. The tendency of dynamic properties of building obtained here are useful for the validation of dynamic properties of buildings in the evaluation of serviceability.

• Proceedings of the KIEE Conference
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1494-1496
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• 2000

We have studied the temperature dependence on the growth and structure of carbon nanotubes using thermal chemical vapor deposition. All the carbon nanotubes have bamboo shaped multi walled structure with closed tip. The growth rate and density of carbon nanotubes increase with increasing growth temperature. The numbers of graphite sheet at the wall increase with increasing growth temperature. The crystallinity of graphite sheets become enhanced at the high growth temperature.