• Current Photovoltaic Research
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• 제3권3호
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• pp.80-84
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• 2015

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

• 한국재료학회지
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• 제16권9호
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• pp.571-577
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• 2006

We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• 한국재료학회지
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• 제16권10호
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• pp.656-662
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• 2006

We fabricated thermal evaporated 10 nm-$Ni_xCo_{1-x}$ (x=0.2, 0.5 and 0.8) /(poly)Si films to form nanothick cobalt nickel composite silicides by a rapid thermal annealing at $700{\sim}1100^{\circ}C$ for 40 seconds. A field emission scanning electron microscope and a micro-Raman spectrometer were employed for microstructure and silicon residual stress characterization, respectively. We observed self-aligned micro-pinholes on single crystal silicon substrates silicidized at $1100^{\circ}C$. Raman silicon peak shift indicates that the residual tensile strain of $10^{-3}$ in single crystal silicon substrates existed after the silicide process. We propose thermal stress from silicide exothermic reaction and high temperature silicidation annealing may cause the pinholes. Those pinholes are expected to be avoided by lowering the silicidation temperature. Our results imply that we may use our newly proposed composite silicides to induce the appropriate strained layer in silicion substrates.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.314-314
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• 2012

The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

• 전자공학회논문지A
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• 제30A권10호
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• pp.41-50
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• 1993

This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1${\times}4{\mu}m^{2}$. The switching speed of 2.4ns/gate was obtained by measuring the minimum propagation delay time in the I$^{2}$L ring oscillator with 31 stages.

• 한국통신학회논문지
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• 제16권11호
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• pp.1179-1185
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• 1991

초박막 재산화 질화산화막을 $1050^{\circ}C-1100^{\circ}C$ 온도에서 20, 40초 동안 산소 분위기에서 램프 가열 방법의 급속 열처리 공정에 의해 형성 시켰다. 초박막의 전기적 특성은 누설전류, 항복전압, 시간종속 항복과 F-N 관통을 분석 하였다. 질화와 재산화 조건에 따른 전하포획의 의존성 즉 고전계 스트레스에 유기되는 항복전하량$(Q_{BD})$ 증가 여부와 평탄대역 전압이동$(\DeltaV_{FB})$을 연구하였다. 분석 결과에 의하면, 급속 열처리 재산화시 유전적 성질이 상당히 개선되었고, 항복전하량은 증가되었으며, 평탄대역전압은 감소 되었다.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.18-22
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• 2008

In this paper, the Ni-Co alloy was used for thermal stability estimation comparison with Ni structure. The proposed Ni/Ni-Co structure exhibited wider range of rapid thermal process windows, lower sheet resistance in spite of high temperature annealing up to $700^{\circ}C$ for 30 min, more uniform interface via FE-SEM analysis, NiSi phase peak. Therefore, The proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni-silicide for nano-scale MOSFET technology.

• 한국결정성장학회지
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• 제8권2호
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• pp.299-306
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• 1998

비정질 규소가 결정질로 되기 위해서는 활성화가 필요하다. 이 활성화는 레이저 및 로내에서의 열처리로 열에너지를 가하면 달성될 수 있다. 이때 이 열에너지 외에 기계적 에너지 등을 가하면 활성화에 도움이 될 수 있을 것이다. 본 연구에서는 습식연마와 자기이온주입 등의 방법으로 기계적 손상을 주어서 이것이 LPCVD로 증착된 비정질 규소 박막의 결정화에 미치는 영향을 조사하였다. 결정성 확인을 위해서는 XRD와 라만분석법을 사용하였다. 본 연구의 결과, 기계적 손상이 비정질 규소 박막의 결정화를 증진시키는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• 한국분말재료학회지
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• 제11권6호
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• pp.528-534
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• 2004

Using the nano Fe powders having 50 nm in diameter, Fe compact bodies were fabricated by injec-tion molding process. The relationship between microstructure and material properties depending on the volume ratio of powder/binder and sintering temperature were characterized by SEM, TEM techniques. In the compact body with the volume percentage ratio of 45(Fe powder) : 55(binder), which was sintered at $700^{\circ}C,$ the relative density was about $97{\%},$ and the values of volume shrinkage and hardness were about $66.3{\%}$ and 242.0 Hv, respec-tively. Using the composition of 50(Fe powder) : 50(binder) and sintered at $700^{\circ}C,$ the values of relative density, volume shrinkage and hardness of Fe sintered bodies were $73.3{\%},\;47.6{\%}$ and 152.8 Hv, respectively. They showed brittle fracture mode due to the porous and fine microstructure.