• Title/Summary/Keyword: Rapid Thermal Processing

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Influence of Metal Particles on the Melt Behavior of PET/PP Fiber Bundles by Microwave Heating (마이크로파 가열에 의한 PET/PP 섬유다발의 용융거동에 금속입자의 영향)

  • Shin, Dong-Ho;Lee, Seung-Goo;Joo, Chang-Whan
    • Proceedings of the Korean Fiber Society Conference
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    • 2003.04a
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    • pp.150-153
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    • 2003
  • Microwaves belong to the portion of the electromagnetic spectrum with frequencies between 300MHz and 300GHz.$\^$1)/ In microwave processing, the energy is delivered directly to materials through molecular interaction with the electromagnetic field. This result in rapid heating throughout the material thickness with the reduced thermal gradients. If microwave is applied to fibrous materials, it can be reduced processing time. (omitted)

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Electrical and Optical Characteristics of X/40/60 PLZT Thin Films by Sol-Gel Processing (Sol-Gel 법에 의한 X/40/60 PLZT 박막의 전기 및 광학 특성)

  • 이진욱;마석범;강종윤;장낙원;박정흠
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.139-142
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    • 1996
  • X/40/60 PLZT thin films were prepared by sol-gel processing and annealed by rapid thermal annealing(RTA). X/40/60 PLZT thin films were crystallized at 75$0^{\circ}C$ for 5min by RTA. Hysteresis curves were narrowed and coercive field was decreased from 50kV/cm to 31.2 kV/cm and remnant polarization was also decreased from 14.3$\mu$C/$\textrm{cm}^2$ to 6.72$\mu$C/$\textrm{cm}^2$ as La mol% increased. Dielectric constanat and optical transmittance were increased with increasing La mol%.

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A Study on the Electrical Characteristics of Optical Memory PLZT Thin Films (Sol-Gel법으로 제작된 광메모리영역 PLZT박막의 전기적 특성)

  • 최형욱;장낙원;백동수;박정흠;박창엽
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.1
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    • pp.57-61
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    • 1998
  • In this study, PLZT stock solutions were prepared by Sol-Gel processing after the compositions were selected in the memory region of PLZT bulk phase diagram. PLZT solutions were deposited on the ITO glass substrate by spin-coating method. The thin films were annealed by rapid thermal processing. The electric characteristics, hysteresis loop, C-V characteristics of thin films in the memory region were measured in order to investigate the electrical characteristics of PLZT thin films. In selected compositions the decrease in Zr/Ti ratio led to an increase in dielectric constant and the decrease in remanent polarization and coercieve field which brought about slim hysteresis loop.

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Electrical Properties of (Pb, LaITiO$_3$ Thin Films fabricated by Sol-Gel Processing (Sol-Gel 법에 의한 (Pb, La)TiO$_3$ 박막의 전기적 특성)

  • 구본혁;박정흠;장낙원;마석범;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.48-51
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    • 1997
  • (Pb. La)TiO$_3$ thin films were fabricated by sol-gel Processing and spin-coated on the Pt substrate. The spin-coated PLT films were sintered at 75$0^{\circ}C$ for 5min by rapid thermal ann La content dependence of the electrical properties of the PLT thin films are discussed. Wit La mole% from 20 to 36mo1e%. the dielectric constant of the PLT thin films decreased f 570. P-E hysteresis loops changed from ferroelectric to paraelectric. and the charge storage charging time decreased. The Curie Point decreased with increasing La content. The leak density also decreased and La 36mo1% species shows mood characteristics less than 10- electric field 500 (KV/cm) Because of the broad range of composition-controlled ferroelectric PLT thin films are suitable for memory application.

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Raman spectroscopy of PLZT thin films prepared by Sol-Gel processing (Sol-Gel법으로 제작된 PLZT박막의 Raman 연구)

  • 방선웅;장낙원;박정흠;마석범;박창엽;최형욱
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.52-55
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    • 1997
  • In this study, PLZT stock solutions were prepared by sol-gel processing to fabricate PLZT thin films. The stock solutions were spin-coated on ITO-glass and the film were annealed by rapid thermal annealing(RTA). The variation of tile crystallographic structure of the thin films and the phase transition with respect to it were observed using Raman spectra. Raman result showed that the band of spectra are broad as the amount of Zr substitution increased and specially, abrupt change occurs in the raman spectra upon crossing the tetragonal-rhombohedral phase boundry at 2/55/45 PLZT thin film. So, the fact that the crystallographic structure was transitted from tetragonal to rhombohedral structure was certified.

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A Study on the Electrical and the Optical Characteristics of W/65/35 PLZT Ferroelectric Thin Films (X/65/35 PLZT 강유전 박막의 전기 및 광학 특성에 관한 연구)

  • Hur, Woon-Haing;Choi, Hyung-Wook;Paik, Dong-Soo;Kim, Jun-Han;Park, Chang-Yub
    • Proceedings of the KIEE Conference
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    • 1994.11a
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    • pp.209-211
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    • 1994
  • X/65/35 PLZT ferroelectric thin films were fabricated by sol-gel processing. Thin films were crystallized after rapid thermal processing at $750^{\circ}C$ for 5 min. The microstructure, the relative dielectric constant the curie point, the hysteresis curve and the optical transmittance of thin films were investigated.

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Thermal Instability of La0.6Sr0.4MnO3 Thin Films on Fused Silica

  • Sun, Ho-Jung
    • Korean Journal of Materials Research
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    • v.21 no.9
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    • pp.482-485
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    • 2011
  • $La_{0.6}Sr_{0.4}MnO_3$ (LSMO) thin films, which are known as colossal magnetoresistance materials, were prepared on fused silica thin films by conventional RF magnetron sputtering, and the interfacial reactions between them were investigated by rapid thermal processing. Various analyses, namely, X-ray diffraction, transmission electron microscopy combined with energy adispersive X-ray spectrometry, and secondary ion mass spectrometry, were performed to explain the mechanism of the interfacial reactions. In the case of an LSMO film annealed at $800^{\circ}C$, the layer distinction against the underplayed $SiO_2$ was well preserved. However, when the annealing temperature was raised to $900^{\circ}C$, interdiffusion and interreaction occurred. Most of the $SiO_2$ and part of the LSMO became amorphous silicate that incorporated La, Sr, and Mn and contained a lot of bubbles. When the annealing temperature was raised to $950^{\circ}C$, the whole stack became an amorphous silicate layer with expanded bubbles. The thermal instability of LSMO on fused silica should be an important consideration when LSMO is integrated into Si-based solid-state devices.

Thermal and Hygroscopic Properties of Indoor Particulate Matter Collected on an Underground Subway Platform

  • Ma, Chang-Jin;Lee, Kyoung-Bin;Zhang, Daizhou;Yamamoto, Mariko;Kim, Shin-Do
    • Asian Journal of Atmospheric Environment
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    • v.9 no.3
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    • pp.228-235
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    • 2015
  • In order to clarify the thermal and hygroscopic properties of indoor particulate matter (PM) in a semiclosed subway space, which is critically important for understanding of the distinctive particle formation processes as well as the assessment of their health effects, the size-resolved PMs (i.e., $PM_{2.5}$ and $PM_{10-2.5}$) were intensively collected on the platform of Miasageori station on the Seoul Subway Line-4. The elemental concentrations in soluble and insoluble fractions were determined by PIXE from the bulkily pretreated $PM_{2.5}$. The thermal and hygroscopic characteristics of individual particles were investigated via a combination of the unique pretreatment techniques (i.e., the high-temperature rapid thermal process and the water dialysis) and SEM-EDX analysis. Iron and calcium were unequaled in insoluble and soluble $PM_{2.5}$ fractions, respectively, with overwhelming concentration. The SEM-EDX's elemental net-counts for the pre- and post-pyrolyzed PMs newly suggest that magnesium and several elements (i.e., silica, aluminum, and calcium) may be readily involved in the newly generated subway fine PM by a high-temperature thermal processing when trains are breaking and starting. Through the water dialysis technique, it turned out that calcium has meaningful amount of water soluble fraction. Furthermore, the concentrations of the counter-ions associated with the calcium in subway $PM_{10-2.5}$ were theoretically estimated.

Electrical properties of $Pb(Zr_xTi_{1-x})O_3$ferroelectric thin films prepared by sol-gel processing (Sol-gel법에 의한 $Pb(Zr_xTi_{1-x})O_3$ 강유전 박막의 전기특성)

  • 백동수;박창엽
    • Electrical & Electronic Materials
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    • v.9 no.2
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    • pp.132-137
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    • 1996
  • Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

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Development of the RTP System for Metal Alloy using One Lamp (한 개의 Lamp를 이용한 Metal Alloy용 RTP 장비 개발)

  • Choi, Jin-Ho;Lee, Dong-Youb
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.254-257
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    • 1996
  • A Rapid Thermal Processing (RTP) system operated below $500^{\circ}C$ has been designed and constructed. It uses an optical pyrometer for measuring wafer temperature, the sensing range of pyrometer is from $2.0{\mu}m$ to $2.4{\mu}m$. To remove the interference effect by IR emitted from lamps an IR filter is adapted which uses water. The best condition for Al alloy using the RTP system is $425^{\circ}C$ for ten seconds. The RTP system uses many lamps for supplying enough power in processing wafer because the absorption wavelength range of IF filter is from $1.3{\mu}m$ to $4.0{\mu}m$. However, reproducibility and uniformity is reduced due to the difference of lamp characteristics. Therefore, for improving the reproducibility and uniformity new RTP system using one lamp is designed. The new RTP system uses a focusing mirror and it focuses the light of lamp. The curverture of the focusing mirror is controlled to supply uniform power in processing wafer. The result of computer simulation shows the possibility of new RTP system using one lamp.

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