• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.11
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• pp.5400-5418
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• 2016

Femtocells are envisioned as a key solution to embrace the ever-increasing high data rate and thus are extensively deployed. However, the dense and random deployments of femtocell access points (FAPs) induce severe intercell inference that in turn may degrade the performance of spectral efficiency. Hence, unrestrained proliferation of FAPs may not acquire a net throughput gain. Besides, given that numerous FAPs deployed in ultra-dense networks (UDNs) lead to significant energy consumption, the amount of FAPs deployed is worthy of more considerations. Nevertheless, little existing works present an analytical result regarding the optimal FAP density for a given User Equipment (UE) density. This paper explores the realistic scenario of randomly distributed FAPs in UDN and derives the coverage probability via Stochastic Geometry. From the analytical results, coverage probability is strictly increasing as the FAP-to-UE ratio increases, yet the growing rate of coverage probability decreases as the ratio grows. Therefore, we can consider a specific FAP-to-UE ratio as the point where further increasing the ratio is not cost-effective with regards to the requirements of communication systems. To reach the optimal FAP density, we can deploy FAPs in line with peak traffic and randomly switch off FAPs to keep the optimal ratio during off-peak hours. Furthermore, considering the unbalanced nature of traffic demands in the temporal and spatial domain, dynamically and carefully choosing the locations of active FAPs would provide advantages over randomization. Besides, with a huge FAP density in UDN, we have more potential choices for the locations of active FAPs and this adds to the demand for a strategic sleeping policy.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.8 no.6
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• pp.1881-1900
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• 2014

Since 802.11 wireless LANs are so widely used, it has become common for numerous access points (APs) to overlap in a region, where most of those APs are managed individually without any coordinated control. This pattern of wireless LAN usage is called the private OBSS (Overlapping Basic Service Set) environment in this paper. Due to frame collisions across BSSs, each BSS in the private OBSS environment suffers severe performance degradation. This study approaches the problem from the perspective of congestion control rather than noise or collision resolution. The retry limit, one of the 802.11 attributes, could be used for traffic control in conjunction with TCP. Reducing the retry limit causes early discard of a frame, and it has a similar effect of random early drops at a router, well known in the research area of congestion control. It makes the shared link less crowded with frames, and then the benefit of fewer collisions surpasses the penalty of less strict error recovery. As a result, the network-wide performance improves and so does the performance of each BSS eventually. Reducing the retry limit also has positive effects of merging TCP ACKs and reducing HOL-like blocking time at the AP. Extensive experiments have validated the idea that in the OBSS environment, reducing the retry limit provides better performance, which is contrary to the common wisdom. Since our strategy is basically to sacrifice error recovery for congestion control, it could yield side-effects in an environment where the cost of error recovery is high. Therefore, to be useful in general network and traffic environments, adaptability is required. To prove the feasibility of the adaptive scheme, a simple method to dynamically adjust the value of the retry limit has been proposed. Experiments have shown that this approach could provide comparable performance in unfriendly environments.

• Journal of Broadcast Engineering
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• v.22 no.3
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• pp.381-396
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• 2017

In this paper, the perceptual rate control algorithm is studied for HEVC (High Efficiency Video Coding) encoder with bit allocation based on perceived visual quality. This paper proposes perceptual rate control algorithm which could consider perceived quality for HEVC encoding method. The proposed rate control algorithm employs adaptive bit allocation for frame and CTU level using the perceived visual importance of each CTU. For performance evaluation of the proposed algorithm, the proposed algorithm was implemented on HM 16.9 and tested for sequences in Class B under the CTC (Common Test Condition) RA (Random Access) case. Experimental results show that the proposed method reduces the bitrate of 3.12%, and improves BD-PSNR of 0.08dB and bitrate accuracy of 0.07% on average. And also, we achieved MOS improvement of 0.16 with the proposed method, compared with the conventional method based on DSCQS (Double Stimulus Continuous Quality Scale).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.3B
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• pp.462-473
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• 2010

The RFID system has the security problem of location tracking and user privacy. In order to solve this problem, the cryptographic access method using hash function is difficult to in real applications. Because there is a limit of computing and storage capacity of Tag, but the safety is proved. The lightweight authentication methods like HB and LMAP guarantee the high efficiency, but the safety is not enough to use. In this paper, we use the AES for RFID Authentication, and solve the problem of using fixed key with key change step by step. The symmetric keys of the tag and server are changed by the random number generated by tag, reader and server successively. This could prevent the key exposure. As a result, the output of the tag and reader always changes. These key changes could make it possible to prevent eavesdropping, replay attack, location tracking and spoofing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.101-102
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• 2006

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant, It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the sell-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS). respectively. The removal rate of BTO thin film using the $BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.186-186
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• 2013

Nitrogen doped Ge-Sb-Te (N-GST) thin films for phase change random access memory (PRAM) applications were investigated by synchrotron-radiation-based x-ray photoelectron spectroscopy and absorption spectroscopy. Nitrogen doping in GST resulted in more favorable N atoms' bonding with Ge atoms rather than with Sb and Te atoms [1,2], which explains the higher phase change transition temperature than that of undoped Ge-Sb-Te thin film. Surprisingly, it was noticed that N atoms also existed in the form of molecular nitrogen, $N_2$, which is detrimental to the stability of the GST performance [3]. N-doped GST experimental features were also supported by ab-initio molecular dynamic calculations [2]. References [1] M.-C. Jung, Y. M. Lee, H.-D. Kim, M. G. Kim, and H. J. Shin, K. H. Kim, S. A. Song, H. S. Jeong, C. H. Ko, and M. Han, "Ge nitride formation in N-doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 91, 083514 (2007). [2] Zhimei Sun, Jian Zhou, Hyun-Joon Shin, Andreas Blomqvist, and Rajeev Ahuja, "Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 93, 241908 (2008). [3] Kihong Kim, Ju-Chul Park, Jae-Gwan Chung, and Se Ahn Song, Min-Cherl Jung, Young Mi Lee, Hyun-Joon Shin, Bongjin Kuh, Yongho Ha, Jin-Seo Noh, "Observation of molecular nitrogen in N-doped Ge2Sb2Te5", Appl. Phys. Lett. 89, 243520 (2006).

• Journal of Information Science Theory and Practice
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• v.4 no.1
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• pp.49-64
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• 2016

What government does/fails to do is conveyed to the public largely by records and information of various types in the public service, without which there will be no government. When records are poorly managed, much time is involved in sorting and locating needed information from large volumes of records. The rate of records misplaced or lost from which useful information for decision making is usually obtained makes it difficult to provide concise and up-to-date records of both past and present operations, raising the challenge of effective record-keeping. Thus this study examined records management practices in selected local government councils in Ogun State, Nigeria, adopting the descriptive survey research method using questionnaires for data collection. Its population comprised 415 records of personnel in the selected councils, of which 208 were sampled using simple random technique. From the 208 copies of the questionnaire administered on the registry personnel, 150 copies were useable, with a 72.12% response rate. Descriptive statistics were used for the analysis. The results indicated a prevalence of paper as the dominant medium for recording/conveying information in the councils with most of these being either in active state, semi-active, and vital and were kept and maintained in the registry, while in-active records were kept in the records store. Storage facilities for record-keeping were insufficient. Security measures against unauthorized access to records were by restrictions and subject users to managerial clearance. The study concluded that council records were in chaos and recommended the formulation of coherent records management policy, adequate budgetary provision, and adequate finance.