• Journal of Industrial and Engineering Chemistry
• /
• v.68
• /
• pp.153-160
• /
• 2018

An environmentally favorable (chlorine-free) solid oxidizer, guanidinium dinitramide [GDN; $NH_2C(NH_2)NH_2N(NO_2)_2$], was newly synthesized from guanidine carbonate [$NH_2C(=NH)NH_2{\cdot}1/2H_2CO_3$]. Two different crystalline forms (${\alpha}-type$ and ${\beta}-type$) appeared according to the applied solvents and synthesis conditions. Moisture, during extraction, might become trapped in a crystal between inner molecules. Therefore, despite having the same chemical composition, Raman-IR and TGA-DSC revealed different physical characteristics of the two forms. Peaks of Raman shift near $1000cm^{-1}$ implied different chemical structures. Thermal analysis revealed an exothermic temperature $155.7^{\circ}C$ for ${\alpha}-type$ but one of $191.6^{\circ}C$ for ${\beta}-type$. The caloric value of ${\alpha}-type$ was 536.4 J/g, which was 2.5 times larger than that of the ${\beta}-type$, which was 1310 J/g. While the synthesized GDN of ${\alpha}-type$ showed a steep exothermic decomposition, the ${\beta}-type$ was slowly decomposed after melting through an endothermic process. This work implied that despite of the same molecular formula some different core thermal properties would appear depending on synthesis conditions.

• Tribology and Lubricants
• /
• v.35 no.3
• /
• pp.176-182
• /
• 2019

The primary objective of this study is to treat a monocrystalline silicon (Si) wafer having a thickness of $279{\mu}m$ by employing the ultrasonic nanocrystal surface modification (UNSM) technology for improving the efficiency and service life of nano-electromechanical systems (NEMSs) and micro-electromechanical systems (MEMSs) by enhancing of wear and corrosion resistances. The wear and corrosion resistances of the Si wafer were systematically investigated before and after UNSM treatment, wherein abrasive, oxidative and spalling wear mechanisms were applied to the as-received and subsequently UNSM-treated Si wafer. Compared to the asreceived state, the wear and corrosion resistances of the UNSM-treated Si wafer are found to be enhanced by about 23% and 14%, respectively. The enhancement in wear and corrosion resistances after UNSM treatment may be attributed to grain size refinement (confirmed by Raman spectroscopy) and modified surface integrity. Furthermore, it is observed that the Raman intensity reduced significantly after UNSM treatment, whereas neither the Raman shift nor new phases were found on the surface of the UNSM-treated Si wafer. In addition, the friction coefficient values of the as-received and UNSM-treated Si wafers are found to be about 0.54 and 0.39, respectively. Hence, UNSM technology can be effectively incorporated as an alternative mechanical surface treatment for NEMSs and MEMSs comprising Si wafers.

• The Korean Journal of Pharmacology
• /
• v.32 no.3
• /
• pp.425-431
• /
• 1996

Human neutrophil elastases (HNElastase, EC 3.4.21.37), a causative factor of inflammatory diseases, are regulated by plasma proteinase inhibitors, alpha-proteinase inhibitor and ${\alpha}_2-macroglobulin$. Under certain pathological conditions, however, released enzymes or abnormal function of inhibitors may cause various inflammatory disease. NSAIDs have been clinically applied for treatment of inflammatory diseases. Inhibition of cyclooxygenase is a known mechanism of action of NSAIDs in the treatment of inflammatory disease. In in vitro experiments, HNElastase was inhibited by naproxen, phenylbutazone, and oxyphenbutazone, but ibuprofen, ketoprofen, aspirin, salicylic acid, and tolmetin did not inhibit elastase. HNElastase was also inhibited by chelating agents, EDTA & EGTA, and tetracyclines. Removal of divalent metal ions by EDTA caused inhibition of elastase, and reconstitution of the metal ions recovered the enzyme activity to a certain level. Frequencies and contours in the Raman spectra of various conditions of human neutrophil elastase undergo drastic changes upon partial removal and/or reconstitution of calcium and zinc ions. The metal ion content dependent activities and change of the contour of the Raman spectrogram suggest us that the mechanism of action of a chelator or chelator-like agents on neutrophil elastase may be related to the conformational change at/or near the active site, especially -C=O radical or -COOH radical.

• Journal of the Microelectronics and Packaging Society
• /
• v.4 no.1
• /
• pp.1-12
• /
• 1997

본 연구에서는 용액성장법에 의해 양자 입자로 구성된 CdS 박막을 슬라이드 유리기 판위에 성장시키고 이들의 구조적 광학적 특성에 대하여 연구하였고 이들 결과를 토대로 용 액성장법으로 성장된 CdS 박막의 양자 사이즈 효과에 대하여 연구하였다. 성장시간은 1, 3, 10, 20분이었고 성장온도는 75$^{\circ}C$였다. X-선 회절 분석결과 본 연구에서 합성된 CdS 박막은 hexagonal상의 결정구조를 갖는 것으로 나타났고 성장시간에 따라 막의 투께는 61~195nm, 입자사이즈는 8.5~22.5nm로 나타났다. 광에너지 변화에 따른 투과도 측정결과 본 연구의 CdS 시료는 성장시간에 따라 에너지 밴드갭이 2.43~2.51 eV로 나타나서 벌크 CdS의 에너 지 밴드갭인 2.42 ev보다 높은 에너지 밴드갭을 갖게 되어 양자 사이즈 효과에 의한 blue shift 현상이 용액성장법에 의해 합성된 CdS 시료에도 존재한다는 것이 밝혀졌다 그리고 이 같은 용액성장법으로 성장된 CdS에 대해 최초로 수행된 Raman 산란 실험결과 이성장방법 으로 성장된 CdS에는 1TO, E2, 1LO 포논 모드가 존재함을 알수 있었고 또한 입자 사이즈 감소에 의한 1LO포논 모드의저주파수 shift 현상 즉 포논 모드의 softening 현상이 있음이 밝혀졌고 softening은 최대6.2%까지 발생하였다. 이와같은 높은 softening은 본연구의 CdS 박막 내 양자 입자의 입도가 작은것에 기인하는 것으로 밝혀졌다. 또한 본 CdS 시료의 양 자 사이즈 효과의 결과로 1TO 포논도 나타났는데 이 1TO 포논과 E2 포논의 Raman shift 는 성장시간 즉 막의 두께와는 무관한 것으로 나타났다.행렬모형(二重比例行列模型)을 이용하여, 산업구조의 변화로 인한 직업별 인력수요 변화가 충분히 고려되도록 하였다. 전망의 결과에 따르면 향후 우리 경제는 지식기반경제(knowledge-based economy)로 이행하고 있다고 볼 수 있다. 우선 산업구조면에서 지식집약적산업으로의 구조조정이 일어나게 되고 이에 따라 산업별 취업구조에서도 고기술산업의 취업준비중이 급속히 증가하게 된다. 직업별 취업분포에 있어서도 전문기술직 행정관리직 등의 고숙련 사무직의 비중은 크게 증가하는 반면 생산관련직과 농림어업직의 비중은 감소하게 된다. 이처럼 경제가 지식집약화되어 감에 따라 고학력자에 대한 수요는 지속적으로 증가하지만 현재 적절한 인력양성과 공급이 이루어지지 않고 있어 향후 기술이나 기능에 따른 수급부일정(需給不一政)(skill mismatch)현상이 매우 심해질 것으로 보인다. 따라서 앞으로의 인력정책에서 가장 주안점을 두어야 할 부분은 첨단기술산업과 관련된 인력의 양성에 있다고 하겠다.2시간까지 LPDG용액은 MEC용액보다 비교적 나은 회복을 보였고 재관류 3일과 7일의 폐기능 평가에서 두 용액 모두에서 폐기능의 점차적 소실을 보였으며 이는 병리조직검사에서 보듯이 폐혐에 의한 외적인 요소라고 생각되며 따라서 LPDG용액은 허혈재관류손상 방지 및 급성폐렴 등 염증을 잘 관리한다면 20시간 이상 LPDG용액의 안전한 폐보존의 가능성 을 얻을 수 있었다.ic 형태로 외래유전자가 발현되었지만 대조구에서 87.0% (26/30개) 배반포기가 $\beta$-Gal 활력을 보인 반면, G418 처리구에서는 모든 배반포기가 $\beta$-Gal 활력을 보였다 (P<0.05). 그러나 대조구 및 G418 처리구의 ICM

• Bulletin of the Korean Chemical Society
• /
• v.21 no.12
• /
• pp.1239-1244
• /
• 2000

A study of K addition to the catalyst of CoMo/ ${\gamma}-Al_2O_3$ was studied. The catalyst with 10 at% of K to Mo atoms in 3C10M, the catalyst added 3 wt% CoO to 10 wt% $MoO_3/{\gamma}-Al_2O_3$, showed the highest activity for water gas shift reaction. The addition of K retarded the reducibility of cobalt-molybdenum catalysts. It gave, however, good dispersion and large BET surface area to the catalysts which were attributed to the disappearance of polymolybdate clustyer such as $Mo_7O_{24}^{6-}$ and the formation of small Mo$O_4^{2-}$ cluster. It was confirmed by the analyses of pore size distribution, activation energy, Raman spectroscopy, and electron diffraction. The activation energies and the frequency factors of the catalysts 3C10M and 5KC10M (the catalyst added 5 at% K for Mo to the catalyst 3C10M) were 43.1 and 47.8 kJ/mole, and 4,297 and 13,505 $sec^{-1}$, respectively. These values were also well correlated with our suggestion. These phenomena were attributed to the direct interaction between K and CoMo oxides irrelevant to the support.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.2
• /
• pp.40-43
• /
• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.291.2-291.2
• /
• 2016

3D semiconductor material of silicon that is used throughout the semiconductor industry currently faces a physical limitation of the development of semiconductor process technology. The research into the next generation of nano-semiconductor materials such as semiconductor properties superior to replace silicon in order to overcome the physical limitations, such as the 2-dimensional graphene material in 2D transition-metal dichalcogenide (TMD) has been researched. In particular, 2D TMD doping without severely damage of crystal structure is required different conventional methods such as ion implantation in 3D semiconductor device. Here, we study a p-type doping technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of hydrochloric acid through Raman spectroscopy and electrical/optical measurements. Where the performance parameters of WSe2 - based electronic device can be properly designed or optimized. (on currents increasing and threshold voltage positive shift.) We expect that our p-doping method will make it possible to successfully integrate future layered semiconductor devices.

• Korean Journal of Materials Research
• /
• v.9 no.1
• /
• pp.99-103
• /
• 1999

We investigated the crystalline behavior in active ion implanted silicon through Raman spectroscopy. Four a-Si(amorphous Si) peaks were observed that are related to the ion implantation induced a-Si layer. After the isochronical anneal(30min). and isothermal anneal($450^{\circ}C$), noticeable recovery of crystalline-Si peak at 519cm\ulcorner and peak center shift of the a-Si TO from 465cm\ulcorner to 480cm\ulcorner were observed by RNM(Random Network Model). By applying RNM and SCLM(Spatial Correlation Length Model), the peak center and FWHM(the Full Width at half Maximum) of a-Si were changed dramatically between T\ulcorner=$200^{\circ}C$ and 30$0^{\circ}C$. From the results, it can be said that there is an abrupt structural change at this temperature region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1045-1057
• /
• 2009

The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.52-54
• /
• 2008

The authors investigated the InGaN/GaN multi-quantum well blue light emitting diodes with the implements of the photonic crystals fabricated at the top surface of p-GaN layer or the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra for the blue light emitting diodes, which have a wavelength of 450nm. However, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 504 nm and played as a role of quality enhancement for the crystal growth of GaN thin film. The micro-Raman spectroscopy shows the improved epitaxial quality of GaN thin film.