• Advances in nano research
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• v.3 no.2
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• pp.81-96
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• 2015

Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.

• Tribology and Lubricants
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• v.25 no.1
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• pp.20-24
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• 2009

TiC-derived carbon coatings have been synthesized at $600^{\circ}C$ temperature treatment with $H_2/Cl_2$ mixture gases. From Raman spectroscopy measurements, the modified layer was covered with carbon and the thick-ness of the layer was increased with increasing reaction time. And $I_D/I_G$ ratio was decreased with increasing reaction time. The superior tribological property was obtained from TiC reacted with $Cl_2$ gas for 2 hrs. And the tribological property measurements indicate that TiC-derived carbon layer has $0.9{\times}10_{-6}mm^3/Nm$ in wear coefficient and 0.13 in friction coefficient.

• Advances in nano research
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• v.16 no.1
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• pp.53-69
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• 2024

Advancements in the technology of building materials has led to diverse applications of nanomaterials with the aim to monitor concrete structures. While there are myriad instances of the use of nanoparticles in building materials, the production of smart nano cement-composites is often expensive. Thereupon, this research aims to discover a sustainable nanomaterial from tyre waste using the pyrolysis process as part of the green manufacturing circle. Here, Nano Structure Tyre-Char (NSTC) is introduced as a zero-dimension carbon-based nanoparticle. The NSTC particles were characterized using various standard characterization techniques. Several salient results for the NSTC particles were obtained using microscopic and spectroscopic techniques. The size of the particles as well as that of the agglomerates were reduced significantly using the milling process and the results were validated through a scanning electron microscope. The crystallite size and crystallinity were found to be ~35nm and 10.42%, respectively. The direct bandgap value of 5.93eV and good optical conductivity at 786 nm were obtained from the ultra violet visible spectroscopy measurements. The thermal analysis reveals the presence of a substantial amount of carbon, the rate of maximum weight loss, and the two stages of phase transformation. The FT-Raman confirms the presence of carboxyl groups and a ID/IG ratio of 0.83. Water contact angle around 140° on the surface implies the highly hydrophobic nature of the material and its low surface energy. This characteristic process assists to obtain a sustainable nanomaterial from waste tyres, contributing to the development of a smart building material.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• Journal of the Korean Applied Science and Technology
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• v.34 no.1
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• pp.50-57
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• 2017

Zinc oxide is, one of metal oxide semiconductor, harmless to human and environment-friendly. It has excellent chemical and thermal stability properties. Wurtzite-zinc oxide is a large band gap energy of 3.37 eV and high exciton binding energy of 60 meV. It can be applied to various fields, such as solar cells, degradation of the dye waste, the gas sensor. The photocatalytic activity of zinc oxide is varied according to the particle shape and change of crystallinity. Therefore, It is very important to specify the additives and the experimental variables. In this study, the zinc oxide were synthesized by using a microwave assisted hydrothermal synthesis. The precursor was used as the zinc nitrate, the pH value was controlled as 11 by NaOH. Surfactants are the ethanolamine, cetyltrimethylammonium bromide, sodium dodecyl sulfate, sorbitan monooleate was added by changing the concentration. The composite particles had the shape of a star-like, curcular cone, seed shape, flake-sphere. Physical and chemical properties of the obtained zinc oxide was characterized using x-ray diffractometer, field emission scanning electron microscopy, thermogravimetric analysis and optical properties was characterized using UV-visible spectroscopy, photoluminescence and raman spectroscopy.

• Applied Chemistry for Engineering
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• v.32 no.6
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• pp.640-646
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• 2021

In this study, pitch was synthesized using pyrolysis fuel oil (PFO). Coke with mesophase microstructure was then prepared from the synthesized pitch and its properties were evaluated. Pitch was synthesized by poly-condensation reaction, which is an endothermic reaction at a temperature above 400 ℃ because the PFO was mainly composed of molecules with two to three aromatic rings. The Coke reactor was composed of the pretreatment reactor, preheater for applying heat energy, and coke drum for inducing microstructure of coke. Coke was prepared from synthesized pitch by controlling the temperature of the preheater to 400~490 ℃, and properties were evaluated by polarization microscope, XRD and Raman spectroscopy. The coke prepared at a preheater temperature of 460 ℃ identified flow anisotropic microstructure, and the electrical conductivity was 72.0 S/cm due to high crystallinity. And the flow anisotropic coke showed approximately 2.2 times higher electrical conductivity than that of Super-P, a conductive carbon material.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Applied Chemistry for Engineering
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• v.34 no.5
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• pp.529-533
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• 2023

The fundamental electrochemical properties and adsorption capabilities of the carbonized product derived from coffee grounds, a prevalent form of lignocellulose abundantly generated in our daily lives, have been extensively investigated. The structure and morphology of the resultant carbonized product, obtained through a carbonization process conducted at a relatively low temperature of 600 ℃, were meticulously examined using a scanning electron microscope. Raman spectroscopy measurements yielded a relative crystallinity (D/G ratio) of the carbon product of 0.64. Electrical measurements revealed a linear ohmic relationship within the carbonized product. Furthermore, the viability of utilizing this carbonized material as an anode in lithium-ion batteries was evaluated through half-cell charge/discharge experiments, demonstrating an initial specific capacity of 520 mAh/g. Additionally, the adsorption performance of the carbon material towards a representative dye molecule was assessed via UV spectroscopy analyses. Supplementary experiments corroborated the material's ability to adsorb a distinct model molecule characterized by differing surface polarity, achieved through surface modification. This article presents pivotal findings that hold substantial implications for forthcoming research endeavors centered around the recycling of lignocellulose waste.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.