• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1445-1449
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• 2005

The ram assembly is important equipment in fueling machine of PHWR(Pressurized Heavy Water Reactor) plant where fuel replacement is possible while the plant is in service. Troubles in the ram assembly can cause lots of difficulties in power plant operation. The ram assembly is typically composed of the B-ram, the L-Ram and the C-Ram. The B-ram is focused in this paper because it plays the most important role in the ram assembly. Among the ram fault phenomena, ram stuck phenomena are the most frequent cases in the B-ram, which has a ball screw mechanism driven by a hydraulic motor. Ram stuck phenomena are due to ball wear and damage in ball nut that increase in proportion to the number of fuel replacement. It is required to predict ram stuck phenomena before they occur. In this paper, a method is proposed for predicting ram stuck phenomena using a discrete wavelet transform. The discrete wavelet transform provides information on both the time and frequency characteristics of the input signals. The proposed method uses the frequency bandwidths of coefficients of discrete wavelet decompositions and detail coefficients of discrete wavelet transform to predict ram stuck phenomena. The signal used in this paper is a torque-related signal such as a hydraulic service outlet pressure signal in a hydraulic driving system or a current signal in a DC motor driving system. Finally, the validity of the proposed method is shown via experiment using ball nut characteristic test equipment that simulates ram stuck phenomena due to increased ball friction in ball nut.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.6
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• pp.1241-1246
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• 2009

In this paper, stealth technology, which minimizes detection from the enemy, was analyzed and it was confirmed that Most RCS reduction comes from shaping and in specific parts, by applying RAM. Therefore, we designed and manufactured RAM that absorbs 98% of electromagnetic wave at 94 GHz with 17dB of radar absorption property to minimize RCS at milimeter wave range. As a result, we had 62% reduction in the detection range from the enemy by using developed RAM.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.555-558
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• 2009

In this paper, stealth technology is investigated with RCS(Radar Cross Section) reduction to minimize detection range of retroreflective echoes from enemy. Most RCS reduction comes from shaping. RAM(Radar Absorbing Materials) are applied only in areas where there are special problems. Therefore, we designed and fabricated a RAM that has absorption ability higher than 17 dB at 94 GHz for RF stealth in millimeter wave range. As a result, detection range of enemy can be reduced in the 62 percent range by using a developed RAM.

• Proceedings of the Korean Reliability Society Conference
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• 2001.06a
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• pp.513-520
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• 2001

신규개발장비에 대하여 사용자가 제시한 RAM-D 요구조건을 만족하기 위한 하부 체계의 RAM-D 설계목표 설정 절차 및 방법에 대하여 기동무기체계의 대표적 장비인 전차를 대상으로 연구하여 RAM-D 요소별 할당 모델을 개발하였다.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.1
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• pp.107-114
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• 1994

Hardware implementation of the on-chip learning artificial neural networks is important for real-time processing. A pRAM model is based on probabilistic firing of a biological neuron and can be implemented in the VLSI circuit with learning capability. We derive a backpropagation learning algorithm for the pRAM networks and present its circuit implementation with stochastic computation. The simulation results confirm the good convergence of the learning algorithm for the pRAM networks.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.7
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• pp.666-676
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• 1992

In this paper, algorithm and testable circuit to find all PSF(Pattern Sensitive Fault ) occured in RAM were proposed. Conventional test circuit and algorithm took much time in testing because consecutive test for RAM cells or f-dimensional memory struciure was not employed. In this paper, methodology for parallel RAM-testing was proposed by compensating additional circuit for test to conventional RAM circuit. Additional circuits are parallel comparator, error detector, group selector circuit and a modified decoder used for parallel testing. And also, the constructive method of Eulerian path to obtain efficient test pattern was performed. Consequently, If algorithm proposed in this paper Is used, the same operations as 32sxwor4 lines will be needed to test b x w=n matrix RAM. Circuit simulation was performerd, and 10 bits x :If words testable RAM was designed.

• The Bulletin of The Korean Astronomical Society
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• v.45 no.1
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• pp.65.1-65.1
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• 2020

We present high-resolution, high-sensitivity continuum data of NGC 4522 observed at 3 cm (X-band) and 10 cm (S-band) in full polarization mode using the JVLA. This observation has 2 - 4 times better spatial resolution and 2 - 5 times better sensitivity compared to previous continuum observations. NGC 4522 is a Virgo spiral galaxy undergoing active ram pressure stripping. This galaxy is particularly well known for the CO emission detected outside its stellar disk, some of which coincides with the extraplanar HI gas and Halpha patches. The major goal of our JVLA observation is to leverage our understanding of the influence of the ram pressure on the general ISM field and multi-phase medium. By combining our new deep radio continuum data and previous observations, we will investigate how the B-field properties can be affected by the ram pressure, and what roles the B-field plays in the stripping process of the multi-phased ISM and in the star formation activity when the ram pressure is present.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.200.1-200
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• 2003

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.141-157
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• 2001

Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

• Proceedings of the Microbiological Society of Korea Conference
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• 2006.05a
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• pp.82-83
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• 2006