• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.05a
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• pp.228-230
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• 2005

Magnetic field has been used to hold plasma at high temperature for a long time. Reverse field has shown unstable process. Using ratio frequency, the author could control the instability of the process and formed a stable erversed field.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.284-284
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.81-81
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• 2007

• Analytical Science and Technology
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• v.15 no.2
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• pp.108-114
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• 2002

The new system using a glow discharge atomic emission spectrometer for the direct analysis of solid samples has been developed and characterized. The system was consisted of new glow discharge cell improved previous gas-jet boosted nozzle and radio-frequency power supply. In the case of previous type glow discharge chamber, it had been fitted trace analysis of low alloy steel with low discharge power, because it was to decrease redeposition and increase sample weight loss. But it had a problem that plasma becomes unstale due to increased sample weight loss and redeposition resulting from the high discharge power. Because of being problem of previous glow discharge, it is impossible to analyze using high power. The modified gas-jet boosted glow discharge to solve this problem would improve to be less sample loss rate of modified nozzle than sample loss rate of previous nozzle on the equal discharge condition, and improve to increase stability of plasma. The effect of discharge parameters such as discharge pressure, gas flow rate and power on the sample loss rate, emission intensity has been studied to find optimum discharge conditions. The calibration curves of Fe were obtained with 3 low-alloy samples.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.156-159
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• 2011

SiNx:H films have been widely used for anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, SiNx:H films were deposited using high frequency (13.56 MHz) direct plasma enhanced chemical vapor deposition, and the optical and passivation properties were investigated. The radio frequency power, the spacing between the showerhead and wafer, the $NH_3/SiH_4$ ratio, the total gas flow, and the $N_2$ gas flow were changed over certain ranges for the film deposition. The thickness uniformity, the refractive index, and the minority carrier lifetime were then measured in order to study the properties of the film. The optimal deposition conditions for application to crystalline Si solar cells are determined from the results of this study.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.209-212
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• 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.611-615
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. Above all, Electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. Therefore, the electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 60,000 hours. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an argon discharge for pressure from 10 [mTorr] and input RF power 100 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.419-422
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• 1991

A mathematical model was developed to predict the temperature, the density, and the velocity distribution of an inductively coupled thermal plasma. It was for an atmospheric pressure argon thermal plasma generated by a 4 MHz radio frequency power. It has been shown that the hottest region can be moved toward centrial region by applying an external magnetic field. Based on the results of the simulation. an ICP(Inductively Coupled thermal Plasma) system was constructed and thermal plasma was generated.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.287-291
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• 1999

Plasma polymerization of Perfluoropropene(PFP) was carried out in a tubular type reactor. The Plasma was generated by coupling inductively under the fixed discharge power of 25W and the pressure of 100, 140, and 200 mTorr of radio frequency generator. PFP plasma polymerization thin films were deposited in acrylic yams. For 1 hours, the acrylic yams treated and untreated by PFP plasma were immersed in boiling water. Then the reduction of contraction coefficient of acrylic yams were measured respectively. As a result of this experiment, untreated acrylic yams were reduced around 23%, while treated yams were contracted about 18-2%.