• 한국진공학회지
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• 제17권1호
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• pp.40-45
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• 2008

유리기판 위에 약 500 nm 의 두께로 성장된 ZnO층의 구조적, 광학적, 전기적 성질에 미치는 갈륨도핑의 영향에 대하여 연구 하였다. 다결정 ZnO 와 GZO 층은 상온에서 radio frequency magnetron sputtering 법을 사용하여 성장되었다. 투과전자현미경 (TEM)과 x-ray 회절분석 (XRD)에 의하면, 갈륨이 도핑된 ZnO 박막의 결정성은 ZnO에 비하여 향상되었고 (002)방향을 따라 우선성장 되었음이 발견되었다. GZO 박막의 투과도는 가시광 영역에서 ZnO 박막에 비해 약 10% 정도 향상된 것으로 나타났다. PL 분석에 따르면, NBE emission 세기와 DL emission 세기의 비는 GZO 와 ZnO의 경우 각각 2.65:1 과 1.27:1로 나타났다. GZO와 ZnO의 비저항은 각각 1.27과 1.61 $\Omega{\cdot}cm$로서 GZO의 전기전도도가 높았다. GZO 와 ZnO의 캐리어농도는 각각 $10^{18}$ and $10^{20}cm^2$/Vs으로 측정되었다. 본 실험결과 따르면, Ga 도핑으로 인해 ZnO 박막의 전기적, 광학적, 구조적 특성이 향상되었음을 알 수 있었다.

• 한국표면공학회지
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• 제41권4호
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• pp.129-133
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• 2008

Nitrogen and aluminum codoped ZnO(NAZO) thin films were grown on glass substrates with changing the nitrogen flow ratio by radio-frequency magnetron sputtering. The structural, optical, and electrical properties of the NAZO films were investigated. The surface morphologies and the structural properties of the thin films were analyzed by using the X-ray diffraction and scanning electron microscopy. The NAZO thin film, deposited at nitrogen flow ratio of 0%, showed a strongly c-axis preferred orientation and the lowest resistivity of $3.2{\times}10^{-3}{\Omega}cm$. The intensity of ZnO(002) diffraction peak was decreased gradually with increasing the nitrogen flow ratio. The optical properties of the films were measured by UV-VIS spectrophotometer and the optical transmittances for all the samples were found to be an average 90% in the visible range. Based on the transmittance value, the optical bandgap energy for the NAZO thin film deposited at nitrogen flow ratio of 0% was determined to be 3.46 eV. As for the electrical properties, the carrier concentration and the hall mobility were decreased, but the electrical resistivity was increased as the nitrogen flow ratio was increased.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.57-57
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• 2002

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• 한국표면공학회지
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• 제43권4호
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• pp.194-198
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• 2010

Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their $In_2O_3$ content (3.33-15.22 wt%). The ZIO films deposited with an $In_2O_3$ content of 9.54 wt% showed a relatively low resistivity of $9.13{\times}10^{-4}{\Omega}cm$ and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the $In_2O_3$ content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.407-410
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• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ℃ and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 ㎠/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

• 한국표면공학회지
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• 제53권1호
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• pp.9-14
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• 2020

CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm^-1 and 474cm^-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.288-292
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• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• 한국태양에너지학회 논문집
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• 제26권4호
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• pp.55-61
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• 2006

Titanium oxide ($TiO_2$) films are deposited on the indium tin oxide (ITO) substrate in an $Ar/O_2$ atmosphere by using reactive RF (Radio Frequency) magnetron sputtering technique, and Electrochromic properties and durability of $TiO_2$ films deposited at different preparation conditions are investigated by using UV-VIS spectrophotometer and cyclic voltammetry Li+ interalation/deintercalation in $TiO_2$ films shows that the electrochromic properties and durability of as-deposited films strongly depend on gas pressure $TiO_2$ films formed in our sputtering conditions are found to remain transparent, irrespective of their Li+ ion contents. The optimum sputtering conditions for film as passive counter electrode in electrochromic devices are working pressure of $1.0\;{\times}\;10^{-2}\;torr$ and oxygen flow raes of $10{\sim}15\;sccm$, respectively.

• 한국결정성장학회지
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• 제21권2호
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• pp.65-69
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• 2011

RF 마그네트론 스퍼터링으로 가스조성비와 기판의 온도를 변화시키면서 $Tio_2$ 박막을 성장하였다. XRD, SEM, AFM 및 분광 광도계를 이용하여 박막의 구조와 광학적 특성을 고찰하였다. 박막에는 아나타제 결정성만 관찰되었으며 온도가 높아질수록 회절 피크의 강도가 증가하였다. 산소농도가 증가함에 따라 기둥구조의 결정성장률이 감소되었으며 굴절률과 흡수율은 감소하였다. $Tio_2$ 박막은 300~400oC의 기판온도와 10 %의 $O_2$ 분위기에서 성장한 박막의 표면이 매끄럽고 투과특성이 우수한 $300{\sim}400^{\circ}C$ 박막을 얻을 수 있었다.